Transistörler - FET, MOSFET - RF
- Komponent
- 3,912
- Marka
- 26
Komponentler
3,912 sonuç · Sayfa 61/79| Parça No | Üretici | Part Status | Voltage - Rated | Package / Case | Frequency | Current Rating (Amps) | Supplier Device Package | Power - Output | Current - Test | Transistor Type | Gain | Voltage - Test | Noise Figure | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MRFG35030R5
FET RF 15V 3.55GHZ HF-600 |
NXP Semiconductors | Obsolete | 15 V | HF-600 | 3.55GHz | — | — | 3W | 650 mA | pHEMT FET | 12dB | 12 V | — | — |
|
MRFIC1501R2
WIDE BAND LOW POWER AMPLIFIER, 1 |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — |
|
MRFX035HR5
TRANS LDMOS 35W 512 MHZ 65V |
NXP Semiconductors | Active | 179 V | NI-360H-2SB | 1.8MHz ~ 512MHz | 10µA | NI-360H-2SB | 35W | 15 mA | LDMOS | 24.8dB | 65 V | — | — |
|
MRFX1K80GNR5
600MHZ 1.8KW OM1230G-4L |
NXP Semiconductors | Active | — | OM-1230G-4L | 1.8MHz ~ 470MHz | — | OM-1230G-4L | 1800W | — | LDMOS | 24dB | 65 V | — | — |
|
MRFX1K80HR5
RF MOSFET LDMOS 65V NI-1230H-4S |
NXP Semiconductors | Active | 182 V | SOT-979A | 1.8MHz ~ 470MHz | 10µA | NI-1230-4H | 1800W | 200 mA | LDMOS (Dual) | 24dB | 65 V | — | — |
|
MRFX1K80NR5
RF MOSFET LDMOS 65V OM1230-4L |
NXP Semiconductors | Active | — | OM-1230-4L | 1.8MHz ~ 470MHz | — | OM-1230-4L | 1800W | — | LDMOS | 24dB | 65 V | — | — |
|
MRFX1K80NR5578
RF POWER FIELD-EFFECT TRANSISTOR |
Rochester Electronics | Active | 179 V | OM-1230-4L2L | 1.8MHz ~ 400MHz | 100mA | OM-1230-4L2L | 1800W | 100 mA | LDMOS (Dual) | 24.4dB | 65 V | — | — |
|
MRFX600GSR5
TRANS LDMOS 600W 400 MHZ 65V |
NXP Semiconductors | Active | 179 V | NI-780GS-4L | 1.8MHz ~ 400MHz | 10µA | NI-780GS-4L | 600W | 100 mA | LDMOS (Dual) | 26.4dB | 65 V | — | — |
|
MRFX600HR5
TRANS LDMOS 600W 400 MHZ 65V |
NXP Semiconductors | Active | 179 V | NI-780-4 | 1.8MHz ~ 400MHz | 10µA | NI-780-4 | 600W | 100 mA | LDMOS (Dual) | 26.4dB | 65 V | — | — |
|
MRFX600HSR5
TRANS LDMOS 600W 400 MHZ 65V |
NXP Semiconductors | Active | 179 V | NI-780S-4L | 1.8MHz ~ 400MHz | 10µA | NI-780S-4L | 600W | 100 mA | LDMOS (Dual) | 26.4dB | 65 V | — | — |
|
MTP27N06L
NFET T0220 100V 0.07R |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — |
|
MW6S004NT1
FET RF 68V 1.96GHZ PLD-1.5 |
NXP Semiconductors | Active | 68 V | PLD-1.5 | 1.96GHz | — | PLD-1.5 | 4W | 50 mA | LDMOS | 18dB | 28 V | — | — |
|
MW6S004NT1
LATERAL N-CHANNEL RF POWER MOSFE |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — |
|
MW6S010GMR1
FET RF 68V 960MHZ TO270-2GW |
NXP Semiconductors | Obsolete | 68 V | TO-270BA | 960MHz | — | TO-270-2 GULL | 10W | 125 mA | LDMOS | 18dB | 28 V | — | — |
|
MW6S010GNR1
RF L BAND, N-CHANNEL POWER MOSFE |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — |
|
MW6S010GNR1
RF MOSFET LDMOS 28V TO270-2 GULL |
NXP Semiconductors | Active | 68 V | TO-270BA | 960MHz | — | TO-270-2 GULL | 10W | 125 mA | LDMOS | 18dB | 28 V | — | — |
|
MW6S010MR1
FET RF 68V 960MHZ TO-270-2 |
NXP Semiconductors | Obsolete | 68 V | TO-270-2 | 960MHz | — | TO-270-2 | 10W | 125 mA | LDMOS | 18dB | 28 V | — | — |
|
MW6S010NR1
FET RF 68V 960MHZ TO270-2 |
NXP Semiconductors | Not For New Designs | 68 V | TO-270AA | 960MHz | — | TO-270-2 | 10W | 125 mA | LDMOS | 18dB | 28 V | — | — |
|
MW7IC2020NT1
RF MOSFET LDMOS 28V 24PQFN |
NXP Semiconductors | Active | 65 V | 24-PowerQFN | 2.14GHz | — | 24-PQFN (8x8) | 2.4W | 40 mA | LDMOS | 32.6dB | 28 V | — | — |
|
MW7IC2425NBR1
FET RF 65V 2.45GHZ TO-272-16 |
NXP Semiconductors | Obsolete | 65 V | TO-272-16 Variant, Flat Leads | 2.45GHz | — | TO-272 WB-16 | 25W | 55 mA | LDMOS | 27.7dB | 28 V | — | — |
|
MWE6IC9100NBR1-FR
NARROW BAND HIGH POWER AMPLIFIER |
Rochester Electronics | Active | 66 V | TO-272-14 Variant, Flat Leads | 869MHz ~ 960MHz | 10µA | TO-272 WB-14 | 100W | 120 mA | LDMOS | 33.5dB | 26 V | — | — |
|
MWT-173
FET RF 5V 12GHZ PKG 73 |
Microwave Technology | Active | 5 V | Nonstandard SMD | 100MHz ~ 12GHz | 240mA | 73 | 300mW | 240 mA | MESFET | 10dB | 5 V | 2dB | — |
|
MWT-1F
HIGH GAIN GAAS LIJESFET |
Microwave Technology | Active | 6 V | Die | 100MHz ~ 12GHz | 230mA | Chip | — | 230 mA | MESFET | 7dB | 4 V | 2dB @ 12GHz | — |
|
MWT-3F
HIGH POWER GAAS MESFET |
Microwave Technology | Active | 6 V | Die | 500MHz ~ 26GHz | 110mA | Chip | 22dBm | 110 mA | MESFET | 11dB | 4 V | — | — |
|
MWT-5F
GAAS MESFET |
Microwave Technology | Active | — | Die | 500MHz ~ 26GHz | 80mA | Chip | — | 30 mA | GaAs FET | 19dB | 6 V | 3.5dB @ 12GHz | — |
|
MWT-773
FET RF 5V 26GHZ PKG 73 |
Microwave Technology | Active | 5 V | Nonstandard SMD | 500MHz ~ 20GHz | 98mA | 73 | 20dBm | 10 mA | MESFET | 8dB | 3 V | 12dB | — |
|
MWT-7F
MED POWER GAAS MESFET |
Microwave Technology | Active | 6 V | Die | 500MHz ~ 26GHz | 85mA | Chip | 21dBm | 85 mA | MESFET | 8dB | 4 V | 2dB @ 12GHz | — |
|
MWT-9F
MEDIUM POWER GAAS MESFET |
Microwave Technology | Active | 6 V | Die | 500MHz ~ 18GHz | 270mA | Chip | 26.5dBm | 270 mA | MESFET | 8.5dB | 4 V | — | — |
|
MWT-A973
FET RF 5V 18GHZ PKG 73 |
Microwave Technology | Active | 5 V | Nonstandard SMD | 500MHz ~ 18GHz | 120mA | 73 | 24.5dBm | 30 mA | MESFET | 6.5dB | 3 V | 1.8dB | — |
|
MWT-PH11F
MEDPOWER ALGAAS/INGAAS PHEMT |
Microwave Technology | Active | — | Die | 12GHz | 950mA | Chip | — | 950 mA | MESFET | 9dB | 3 V | — | — |
|
MWT-PH15F
MED POWER ALGAAS/INGAAS PHEMT |
Microwave Technology | Active | 6 V | Die | 28GHz | 170mA | Chip | 28.5dBm | 170 mA | MESFET | 12dB | 4 V | — | — |
|
MWT-PH27F
TRANS ALGAAS/INGAAS PHEMT |
Microwave Technology | Active | — | Die | 26GHz | 120mA | Chip | 25dBm | 1 mA | pHEMT FET | 14dB | 3 V | — | — |
|
MWT-PH29F
TRANS ALGAAS/INGAAS PHEMT |
Microwave Technology | Active | — | Die | 26GHz | 330mA | Chip | — | 1 mA | pHEMT FET | 11dB | 3 V | — | — |
|
MWT-PH31F
TRANS ALGAAS/INGAAS PHEMT |
Microwave Technology | Active | — | Die | 18GHz | 280mA | Chip | 30dBm | 1 mA | pHEMT FET | 13dB | 2 V | — | — |
|
MWT-PH32F
TRANS ALGAAS/INGAAS PHEMT |
Microwave Technology | Active | — | Die | 12GHz | 360mA | Chip | 30.5dB | 1 mA | pHEMT FET | 13dB | 2 V | — | — |
|
MWT-PH33F
TRANS ALGAAS/INGAAS PHEMT |
Microwave Technology | Active | — | Die | 26GHz | 90mA | Chip | 24dBm | 1 mA | pHEMT FET | 14dB | 3 V | — | — |
|
MWT-PH4F
MED POWER ALGAAS/INGAAS PHEMT |
Microwave Technology | Active | — | Die | 28GHz | 84mA | Chip | 22dBm | 84 mA | MESFET | 16dB | 3 V | — | — |
|
MWT-PH7F
MED POWER ALGAAS/INGAAS PHEMT |
Microwave Technology | Active | — | Die | 28GHz | 110mA | Chip | 24dBm | 110 mA | MESFET | 16dB | 3 V | — | — |
|
MWT-PH8F
TRANS ALGAAS/INGAAS PHEMT |
Microwave Technology | Active | — | Die | 26GHz | 300mA | Chip | 30dBm | 1 mA | pHEMT FET | 12dB | 3 V | — | — |
|
MWT-PH9F
MED POWER ALGAAS/INGAAS PHEMT |
Microwave Technology | Active | 7 V | Die | 26GHz | 220mA | Chip | 27dBm | 220 mA | MESFET | — | 4 V | — | — |
|
NDD05N50Z-1G9
NFET DPAK 500V 4.7A 1.5OH |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — |
|
NE25139-T1
FET RF 13V 900MHZ SOT-143 |
CEL (California Eastern Laboratories) | Obsolete | 13 V | TO-253-4, TO-253AA | 900MHz | 40mA | SOT-143 | — | 10 mA | MESFET Dual Gate | 20dB | 5 V | 1.1dB | — |
|
NE25139-T1-U73
FET RF 13V 900MHZ SOT-143 |
CEL (California Eastern Laboratories) | Obsolete | 13 V | TO-253-4, TO-253AA | 900MHz | 40mA | SOT-143 | — | 10 mA | MESFET Dual Gate | 20dB | 5 V | 1.1dB | — |
|
NE3210S01
FET RF 4V 12GHZ S01 |
CEL (California Eastern Laboratories) | Obsolete | 4 V | 4-SMD | 12GHz | 15mA | SMD | — | 10 mA | HFET | 13.5dB | 2 V | 0.35dB | — |
|
NE3210S01-T1B
FET RF 4V 12GHZ S01 |
CEL (California Eastern Laboratories) | Obsolete | 4 V | 4-SMD | 12GHz | 15mA | SMD | — | 10 mA | HFET | 13.5dB | 2 V | 0.35dB | — |
|
NE34018-64-A
FET RF 4V 2GHZ SOT-343 |
CEL (California Eastern Laboratories) | Obsolete | 4 V | SC-82A, SOT-343 | 2GHz | 120mA | SOT-343 | 12dBm | 5 mA | HFET | 16dB | 2 V | 0.6dB | — |
|
NE34018-A
FET RF 4V 2GHZ SOT-343 |
CEL (California Eastern Laboratories) | Obsolete | 4 V | SC-82A, SOT-343 | 2GHz | 120mA | SOT-343 | 12dBm | 5 mA | HFET | 16dB | 2 V | 0.6dB | — |
|
NE34018-T1
FET RF 4V 2GHZ SOT-343 |
CEL (California Eastern Laboratories) | Obsolete | 4 V | SC-82A, SOT-343 | 2GHz | 120mA | SOT-343 | 12dBm | 5 mA | HFET | 16dB | 2 V | 0.6dB | — |
|
NE34018-T1-64-A
FET RF 4V 2GHZ SOT-343 |
CEL (California Eastern Laboratories) | Obsolete | 4 V | SC-82A, SOT-343 | 2GHz | 120mA | SOT-343 | 12dBm | 5 mA | HFET | 16dB | 2 V | 0.6dB | — |
|
NE34018-T1-A
FET RF 4V 2GHZ SOT-343 |
CEL (California Eastern Laboratories) | Obsolete | 4 V | SC-82A, SOT-343 | 2GHz | 120mA | SOT-343 | 12dBm | 5 mA | HFET | 16dB | 2 V | 0.6dB | — |