Diyotlar - Doğrultucular - Tekil
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Komponentler
10,000 sonuç · Sayfa 115/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
66PQ040
DIODE SCHOTTKY 40V TO247AC |
Vishay | Active | Through Hole | TO-247-3 | TO-247AC | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | Schottky | — | — | — | — | — | — | — |
|
66SPB200A
DIODE SCHOTTKY 200V 60A SPD-2A |
SMC Diode Solutions | Active | Surface Mount | SPD-2A | SPD-2A | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Schottky | 60A | 950 mV @ 60 A | 1.1 mA @ 200 V | 900pF @ 5V, 1MHz | — | -55°C ~ 175°C | — |
|
678-3
RECTIFIER |
Microchip Technology | Active | Chassis Mount | NC, Module | NC | Standard Recovery >500ns, > 200mA (Io) | 300 V | Standard | 25A | 1.2 V @ 10 A | 10 µA @ 100 V | — | — | -65°C ~ 150°C | — |
|
67SPB020A
DIODE SCHOTTKY 20V 60A SPD-2A |
SMC Diode Solutions | Active | Surface Mount | SPD-2A | SPD-2A | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | Schottky | 60A | 480 mV @ 60 A | 6 mA @ 20 V | 4050pF @ 5V, 1MHz | — | -55°C ~ 150°C | — |
|
68190
TRANSISTOR |
Microchip Technology | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
68191
TRANSISTOR |
Microchip Technology | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
69SPB135A
DIODE SCHOTTKY 135V 60A SPD-2A |
SMC Diode Solutions | Active | Surface Mount | SPD-2A | SPD-2A | Fast Recovery =< 500ns, > 200mA (Io) | 135 V | Schottky | 60A | 870 mV @ 60 A | 100 µA @ 135 V | 100pF @ 5V, 1MHz | — | -55°C ~ 175°C | — |
|
69SPB150A
DIODE SCHOTTKY 150V 60A SPD-2A |
SMC Diode Solutions | Active | Surface Mount | SPD-2A | SPD-2A | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Schottky | 60A | 870 mV @ 60 A | 100 µA @ 150 V | 100pF @ 5V, 1MHz | — | -55°C ~ 175°C | — |
|
6A005-G
DIODE GEN PURP 50V 6A R6 |
Comchip Technology | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 50 V | 100pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
6A005B-G
DIODE GEN PURP 50V 6A R6 |
Comchip Technology | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 50 V | 100pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
6A01-G
DIODE GEN PURP 100V 6A R6 |
Comchip Technology | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 100 V | 100pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
6A01B-G
DIODE GEN PURP 100V 6A R6 |
Comchip Technology | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 100 V | 100pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
6A02-G
DIODE GEN PURP 200V 6A R6 |
Comchip Technology | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 200 V | 100pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
6A02B-G
DIODE GEN PURP 200V 6A R6 |
Comchip Technology | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 200 V | 100pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
6A04-G
DIODE GEN PURP 400V 6A P600 |
Comchip Technology | Active | Through Hole | P600, Axial | P600 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 6A | 1.1 V @ 6 A | 5 µA @ 400 V | 100pF @ 4V, 1MHz | — | -55°C ~ 125°C | ✓ |
|
6A04B-G
DIODE GEN PURP 400V 6A R6 |
Comchip Technology | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 400 V | 100pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
6A05
DIODE GEN PURP 50V 6A R6 |
Micro Commercial Components (MCC) | Obsolete | Through Hole | R6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 6A | 950 mV @ 6 A | 10 µA @ 50 V | — | — | -55°C ~ 125°C | — |
|
6A05
DIODE GEN PURP 1000V 6A R-6 |
Rectron USA | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 6A | 1 V @ 6 A | 300 nA @ 1000 V | 150pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
6A05-T
DIODE GEN PURP 50V 6A R6 |
Diodes Incorporated | Obsolete | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 6A | 900 mV @ 6 A | 10 µA @ 600 V | — | — | -65°C ~ 175°C | — |
|
6A05-TP
DIODE GEN PURP 50V 6A R6 |
Micro Commercial Components (MCC) | Not For New Designs | Through Hole | R6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 6A | 950 mV @ 6 A | 10 µA @ 50 V | 150pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
6A05G
DIODE GEN PURP 6A 50V R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 6A (DC) | 1.1 V @ 6 A | 10 µA @ 50 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A05G A0G
DIODE GEN PURP 50V 6A R-6 |
Taiwan Semiconductor | Active | Through Hole | — | R-6 | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 6A | 1.1 V @ 6 A | 10 µA @ 50 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A05G B0G
DIODE GEN PURP 50V 6A R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 6A | 1.1 V @ 6 A | 10 µA @ 50 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A05G R0G
DIODE GEN PURP 50V 6A R-6 |
Taiwan Semiconductor | Market | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 6A | 1.1 V @ 6 A | 10 µA @ 50 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A05GH
DIODE GEN PURP 6A 50V R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 6A (DC) | 1.1 V @ 6 A | 10 µA @ 50 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A05GHA0G
DIODE GEN PURP 50V 6A R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 6A | 1.1 V @ 6 A | 10 µA @ 50 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A05GHB0G
DIODE GEN PURP 50V 6A R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 6A | 1.1 V @ 6 A | 10 µA @ 50 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A05GHR0G
DIODE GEN PURP 50V 6A R-6 |
Taiwan Semiconductor | Market | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 6A | 1.1 V @ 6 A | 10 µA @ 50 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A05GTA
DIODE GEN PURP 50V 6A R-6 |
SMC Diode Solutions | Obsolete | Through Hole | R6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 6A | 950 mV @ 6 A | 10 µA @ 50 V | 150pF @ 4V, 1MHz | — | -65°C ~ 175°C | — |
|
6A05TA
DIODE GEN PURP 50V 6A R-6 |
SMC Diode Solutions | Obsolete | Through Hole | R6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 6A | 950 mV @ 6 A | 10 µA @ 50 V | 150pF @ 4V, 1MHz | — | -65°C ~ 175°C | — |
|
6A06-G
DIODE GEN PURP 600V 6A R6 |
Comchip Technology | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 600 V | 100pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
6A06B-G
DIODE GEN PURP 600V 6A R6 |
Comchip Technology | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 600 V | 100pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
6A08-G
DIODE GEN PURP 800V 6A R6 |
Comchip Technology | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 800 V | 100pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
6A08B-G
DIODE GEN PURP 800V 6A R6 |
Comchip Technology | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 800 V | 100pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
6A1
DIODE GEN PURP 100V 6A R6 |
Micro Commercial Components (MCC) | Obsolete | Through Hole | R6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 6A | 950 mV @ 6 A | 10 µA @ 100 V | — | — | -55°C ~ 125°C | — |
|
6A1
DIODE GEN PURP 1000V 6A R-6 |
Rectron USA | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 6A | 1 V @ 6 A | 300 nA @ 1000 V | 150pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
6A1-T
DIODE GEN PURP 100V 6A R6 |
Diodes Incorporated | Obsolete | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 6A | 900 mV @ 6 A | 10 µA @ 100 V | — | — | -65°C ~ 175°C | — |
|
6A1-TP
DIODE GEN PURP 100V 6A R6 |
Micro Commercial Components (MCC) | Not For New Designs | Through Hole | R6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 6A | 950 mV @ 6 A | 10 µA @ 100 V | — | — | -55°C ~ 125°C | — |
|
6A10
DIODE GEN PURP 1KV 6A R6 |
Micro Commercial Components (MCC) | Obsolete | Through Hole | R6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 6A | 950 mV @ 6 A | 10 µA @ 1000 V | — | — | -55°C ~ 125°C | — |
|
6A10
DIODE GEN PURP 1000V 6A R-6 |
Rectron USA | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 6A | 1 V @ 6 A | 300 nA @ 1000 V | 150pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
6A10-G
DIODE GEN PURP 1KV 6A R6 |
Comchip Technology | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 1000 V | 100pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
6A10-T
DIODE GEN PURP 1KV 6A R6 |
Diodes Incorporated | Obsolete | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 6A | 900 mV @ 6 A | 10 µA @ 1000 V | — | — | -65°C ~ 175°C | — |
|
6A10-T/B
General e Diode R6 1KV 6A |
NextGen Components | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 6A | 950 mV @ 6 A | 10 µA @ 1000 V | 150pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
6A10-TP
DIODE GEN PURP 1KV 6A R6 |
Micro Commercial Components (MCC) | Not For New Designs | Through Hole | R6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 6A | 950 mV @ 6 A | 10 µA @ 1000 V | 150pF @ 4V, 1MHz | — | -55°C ~ 125°C | ✓ |
|
6A100G A0G
DIODE GEN PURP 6A R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 1000 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A100G B0G
DIODE GEN PURP 6A R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 1000 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A100G R0G
DIODE GEN PURP 6A R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 1000 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A100GHA0G
DIODE GEN PURP 6A R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 1000 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A100GHB0G
DIODE GEN PURP 6A R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 1000 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A100GHR0G
DIODE GEN PURP 6A R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 1000 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |