Diyotlar - Doğrultucular - Tekil
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Komponentler
10,000 sonuç · Sayfa 116/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
6A10B-G
DIODE GEN PURP 1KV 6A R6 |
Comchip Technology | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 1000 V | 100pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
6A10G
DIODE GEN PURP 100V 6A R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 6A | 1.1 V @ 6 A | 10 µA @ 100 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A10G
DIODE GEN PURP 1000V 6A R-6 |
Rectron USA | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 6A | 1 V @ 6 A | 500 nA @ 1000 V | 150pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
6A10G A0G
DIODE GEN PURP 100V 6A R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 6A | 1.1 V @ 6 A | 10 µA @ 100 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A10G B0G
DIODE GEN PURP 100V 6A R-6 |
Taiwan Semiconductor | Market | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 6A | 1.1 V @ 6 A | 10 µA @ 100 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A10GH
DIODE GEN PURP 6A 100V R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 6A (DC) | 1.1 V @ 6 A | 10 µA @ 100 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A10GHA0G
DIODE GEN PURP 100V 6A R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 6A | 1.1 V @ 6 A | 10 µA @ 100 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A10GHB0G
DIODE GEN PURP 100V 6A R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 6A | 1.1 V @ 6 A | 10 µA @ 100 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A10GHR0G
DIODE GEN PURP 100V 6A R-6 |
Taiwan Semiconductor | Market | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 6A | 1.1 V @ 6 A | 10 µA @ 100 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A10GTA
DIODE GEN PURP 1KV 6A R-6 |
SMC Diode Solutions | Obsolete | Through Hole | R6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 6A | 950 mV @ 6 A | 10 µA @ 1000 V | 150pF @ 4V, 1MHz | — | -65°C ~ 175°C | — |
|
6A10TA
DIODE GEN PURP 1KV 6A R-6 |
SMC Diode Solutions | Obsolete | Through Hole | R6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 6A | 950 mV @ 6 A | 10 µA @ 1000 V | 150pF @ 4V, 1MHz | — | -65°C ~ 175°C | — |
|
6A1GTA
DIODE GEN PURP 100V 6A R-6 |
SMC Diode Solutions | Obsolete | Through Hole | R6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 6A | 950 mV @ 6 A | 10 µA @ 100 V | 150pF @ 4V, 1MHz | — | -65°C ~ 175°C | — |
|
6A1TA
DIODE GEN PURP 100V 6A R-6 |
SMC Diode Solutions | Obsolete | Through Hole | R6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 6A | 950 mV @ 6 A | 10 µA @ 100 V | 150pF @ 4V, 1MHz | — | -65°C ~ 175°C | — |
|
6A2
DIODE GEN PURP 200V 6A R6 |
Micro Commercial Components (MCC) | Obsolete | Through Hole | R6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 6A | 950 mV @ 6 A | 10 µA @ 200 V | — | — | -55°C ~ 125°C | — |
|
6A2
DIODE GEN PURP 1000V 6A R-6 |
Rectron USA | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 6A | 1 V @ 6 A | 300 nA @ 1000 V | 150pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
6A2-B
DIODE GEN PURP 200V 6A R6 |
Diodes Incorporated | Obsolete | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 6A | 900 mV @ 6 A | 10 µA @ 200 V | — | — | -65°C ~ 175°C | — |
|
6A2-T
DIODE GEN PURP 200V 6A R6 |
Diodes Incorporated | Obsolete | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 6A | 900 mV @ 6 A | 10 µA @ 200 V | — | — | -65°C ~ 175°C | — |
|
6A2-TP
DIODE GEN PURP 200V 6A R6 |
Micro Commercial Components (MCC) | Not For New Designs | Through Hole | R6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 6A | 950 mV @ 6 A | 10 µA @ 200 V | 150pF @ 4V, 1MHz | — | -55°C ~ 125°C | ✓ |
|
6A20G
6A, 200V, STANDARD RECOVERY RECT |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 200 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A20G A0G
DIODE GEN PURP 200V 6A R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 200 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A20G B0G
DIODE GEN PURP 200V 6A R-6 |
Taiwan Semiconductor | Market | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 200 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A20G R0G
DIODE GEN PURP 200V 6A R-6 |
Taiwan Semiconductor | Market | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 200 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A20GH
DIODE GEN PURP 6A 200V R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 6A (DC) | 1 V @ 6 A | 10 µA @ 200 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A20GHA0G
DIODE GEN PURP 200V 6A R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 200 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A20GHB0G
DIODE GEN PURP 200V 6A R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 200 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A20GHR0G
DIODE GEN PURP 200V 6A R-6 |
Taiwan Semiconductor | Market | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 200 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A2GTA
DIODE GEN PURP 200V 6A R-6 |
SMC Diode Solutions | Obsolete | Through Hole | R6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 6A | 950 mV @ 6 A | 10 µA @ 200 V | 150pF @ 4V, 1MHz | — | -65°C ~ 175°C | — |
|
6A2TA
DIODE GEN PURP 200V 6A R-6 |
SMC Diode Solutions | Obsolete | Through Hole | R6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 6A | 950 mV @ 6 A | 10 µA @ 200 V | 150pF @ 4V, 1MHz | — | -65°C ~ 175°C | — |
|
6A4
DIODE GEN PURP 400V 6A R6 |
Micro Commercial Components (MCC) | Obsolete | Through Hole | R6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 6A | 950 mV @ 6 A | 10 µA @ 400 V | — | — | -55°C ~ 125°C | — |
|
6A4
DIODE GEN PURP 1000V 6A R-6 |
Rectron USA | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 6A | 1 V @ 6 A | 300 nA @ 1000 V | 150pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
6A4-T
DIODE GEN PURP 400V 6A R6 |
Diodes Incorporated | Obsolete | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 6A | 900 mV @ 6 A | 10 µA @ 400 V | — | — | -65°C ~ 175°C | — |
|
6A4-TP
DIODE GEN PURP 400V 6A R6 |
Micro Commercial Components (MCC) | Not For New Designs | Through Hole | R6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 6A | 950 mV @ 6 A | 10 µA @ 400 V | 150pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
6A40G A0G
DIODE GEN PURP 400V 6A R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 400 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A40G B0G
DIODE GEN PURP 400V 6A R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 400 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A40G R0G
DIODE GEN PURP 400V 6A R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 400 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A40GH A0G
DIODE GEN PURP 6A 400V R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 6A (DC) | 1 V @ 6 A | 10 µA @ 400 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A40GHB0G
DIODE GEN PURP 400V 6A R-6 |
Taiwan Semiconductor | Market | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 400 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A40GHR0G
DIODE GEN PURP 400V 6A R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 400 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A4GTA
DIODE GEN PURP 400V 6A R-6 |
SMC Diode Solutions | Obsolete | Through Hole | R6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 6A | 950 mV @ 6 A | 10 µA @ 400 V | 150pF @ 4V, 1MHz | — | -65°C ~ 175°C | — |
|
6A4TA
DIODE GEN PURP 400V 6A R-6 |
SMC Diode Solutions | Obsolete | Through Hole | R6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 6A | 950 mV @ 6 A | 10 µA @ 400 V | 150pF @ 4V, 1MHz | — | -65°C ~ 175°C | — |
|
6A6
DIODE GEN PURP 600V 6A R6 |
Micro Commercial Components (MCC) | Obsolete | Through Hole | R6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 6A | 950 mV @ 6 A | 10 µA @ 600 V | — | — | -55°C ~ 125°C | — |
|
6A6
DIODE GEN PURP 1000V 6A R-6 |
Rectron USA | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 6A | 1 V @ 6 A | 300 nA @ 1000 V | 150pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
6A6-T
DIODE GEN PURP 600V 6A R-6 |
Rectron USA | Active | Through Hole | R-6, Axial | R-6 | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 6A | 1 V @ 6 A | 300 nA @ 1000 V | 150pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
6A6-T
DIODE GEN PURP 600V 6A R6 |
Diodes Incorporated | Obsolete | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 6A | 900 mV @ 6 A | 10 µA @ 600 V | — | — | -65°C ~ 175°C | — |
|
6A6-TP
DIODE GEN PURP 600V 6A R6 |
Micro Commercial Components (MCC) | Not For New Designs | Through Hole | R6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 6A | 950 mV @ 6 A | 10 µA @ 600 V | 150pF @ 4V, 1MHz | — | -55°C ~ 125°C | — |
|
6A60G A0G
DIODE GEN PURP 600V 6A R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 600 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A60G B0G
DIODE GEN PURP 600V 6A R-6 |
Taiwan Semiconductor | Market | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 600 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A60G R0G
DIODE GEN PURP 600V 6A R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 600 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A60GH A0G
DIODE GEN PURP 6A 600V R-6 |
Taiwan Semiconductor | Active | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 6A (DC) | 1 V @ 6 A | 10 µA @ 600 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
6A60GHB0G
DIODE GEN PURP 600V 6A R-6 |
Taiwan Semiconductor | Market | Through Hole | R-6, Axial | R-6 | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 6A | 1 V @ 6 A | 10 µA @ 600 V | 60pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |