Diyotlar - Doğrultucular - Tekil
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Komponentler
10,000 sonuç · Sayfa 104/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1T2G R0G
DIODE GEN PURP 100V 1A TS-1 |
Taiwan Semiconductor | Market | Through Hole | T-18, Axial | TS-1 | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 100 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1T3G
DIODE GEN PURP 1A 200V TS-1 |
Taiwan Semiconductor | Active | Through Hole | T-18, Axial | TS-1 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A (DC) | 1 V @ 1 A | 5 µA @ 200 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1T3G A0G
DIODE GEN PURP 200V 1A TS-1 |
Taiwan Semiconductor | Active | Through Hole | T-18, Axial | TS-1 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 200 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1T3G A1G
DIODE GEN PURP 200V 1A TS-1 |
Taiwan Semiconductor | Active | Through Hole | T-18, Axial | TS-1 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 200 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1T3G R0G
DIODE GEN PURP 200V 1A TS-1 |
Taiwan Semiconductor | Market | Through Hole | T-18, Axial | TS-1 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 200 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1T4G A0G
DIODE GEN PURP 400V 1A TS-1 |
Taiwan Semiconductor | Active | Through Hole | T-18, Axial | TS-1 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 400 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1T4G A1G
DIODE GEN PURP 400V 1A TS-1 |
Taiwan Semiconductor | Active | Through Hole | T-18, Axial | TS-1 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 400 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1T4G R0G
DIODE GEN PURP 400V 1A TS-1 |
Taiwan Semiconductor | Active | Through Hole | T-18, Axial | TS-1 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 400 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1T5G A0G
DIODE GEN PURP 600V 1A TS-1 |
Taiwan Semiconductor | Active | Through Hole | T-18, Axial | TS-1 | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 600 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1T5G A1G
DIODE GEN PURP 600V 1A TS-1 |
Taiwan Semiconductor | Market | Through Hole | T-18, Axial | TS-1 | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 600 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1T5G R0G
DIODE GEN PURP 600V 1A TS-1 |
Taiwan Semiconductor | Active | Through Hole | T-18, Axial | TS-1 | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 600 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1T6G A0G
DIODE GEN PURP 800V 1A TS-1 |
Taiwan Semiconductor | Active | Through Hole | T-18, Axial | TS-1 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 800 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1T6G A1G
DIODE GEN PURP 800V 1A TS-1 |
Taiwan Semiconductor | Active | Through Hole | T-18, Axial | TS-1 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 800 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1T6G R0G
DIODE GEN PURP 800V 1A TS-1 |
Taiwan Semiconductor | Active | Through Hole | T-18, Axial | TS-1 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 800 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1T7G A0G
DIODE GEN PURP 1A TS-1 |
Taiwan Semiconductor | Active | Through Hole | T-18, Axial | TS-1 | Standard Recovery >500ns, > 200mA (Io) | — | Standard | 1A | 1 V @ 1 A | 5 µA @ 1000 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1T7G A1G
DIODE GEN PURP 1A TS-1 |
Taiwan Semiconductor | Market | Through Hole | T-18, Axial | TS-1 | Standard Recovery >500ns, > 200mA (Io) | — | Standard | 1A | 1 V @ 1 A | 5 µA @ 1000 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1T7G R0G
DIODE GEN PURP 1A TS-1 |
Taiwan Semiconductor | Active | Through Hole | T-18, Axial | TS-1 | Standard Recovery >500ns, > 200mA (Io) | — | Standard | 1A | 1 V @ 1 A | 5 µA @ 1000 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
2-1616379-6
60105025=DIODE |
TE Connectivity Aerospace Defense and Marine | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
200HF120PV
DIODE GEN PURP 1.2KV 200A DO205 |
Vishay | Obsolete | Stud Mount | DO-205AC, DO-30, Stud | DO-205AC (DO-30) | Standard Recovery >500ns, > 200mA (Io) | 1200 V | Standard | 200A | 1.45 V @ 628 A | 15 mA @ 200 V | — | — | -40°C ~ 180°C | ✓ |
|
200HF40PV
DIODE GEN PURP 400V 200A DO205AC |
Vishay | Obsolete | Stud Mount | DO-205AC, DO-30, Stud | DO-205AC (DO-30) | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 200A | 1.45 V @ 628 A | 15 mA @ 400 V | — | — | -40°C ~ 180°C | ✓ |
|
200HF80PV
DIODE GEN PURP 800V 200A DO205AC |
Vishay | Obsolete | Stud Mount | DO-205AC, DO-30, Stud | DO-205AC (DO-30) | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 200A | 1.45 V @ 628 A | 15 mA @ 800 V | — | — | -40°C ~ 180°C | ✓ |
|
200HFR120PV
DIODE GEN PURP 1.2KV 200A DO205 |
Vishay | Obsolete | Stud Mount | DO-205AC, DO-30, Stud | DO-205AC (DO-30) | Standard Recovery >500ns, > 200mA (Io) | 1200 V | Standard | 200A | 1.45 V @ 628 A | 15 mA @ 1200 V | — | — | -40°C ~ 180°C | — |
|
200HFR40PV
DIODE GEN PURP 400V 200A DO205AC |
Vishay | Obsolete | Stud Mount | DO-205AC, DO-30, Stud | DO-205AC (DO-30) | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 200A | 1.45 V @ 628 A | 15 mA @ 400 V | — | — | -40°C ~ 180°C | — |
|
200HFR80PV
DIODE GEN PURP 800V 200A DO205AC |
Vishay | Obsolete | Stud Mount | DO-205AC, DO-30, Stud | DO-205AC (DO-30) | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 200A | 1.45 V @ 628 A | 15 mA @ 800 V | — | — | -40°C ~ 180°C | — |
|
20BQ030
DIODE SCHOTTKY 30V 2A SMB |
Vishay | Obsolete | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | Schottky | 2A | 470 mV @ 2 A | 500 µA @ 30 V | — | — | -55°C ~ 150°C | ✓ |
|
20BQ030TR
DIODE SCHOTTKY 30V 2A SMB |
Vishay | Obsolete | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | Schottky | 2A | 470 mV @ 2 A | 500 µA @ 30 V | — | — | -55°C ~ 150°C | ✓ |
|
20ETF02
DIODE GEN PURP 200V 20A TO220AC |
Vishay | Obsolete | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 20A | 1.3 V @ 20 A | 100 µA @ 200 V | — | 160 ns | -40°C ~ 150°C | ✓ |
|
20ETF02FP
DIODE GEN PURP 200V 20A TO220FP |
Vishay | Obsolete | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 20A | 1.3 V @ 20 A | 100 µA @ 200 V | — | 160 ns | -40°C ~ 150°C | ✓ |
|
20ETF02S
DIODE GEN PURP 200V 20A D2PAK |
Vishay | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 20A | 1.3 V @ 20 A | 100 µA @ 200 V | — | 160 ns | -40°C ~ 150°C | — |
|
20ETF02STRL
DIODE GEN PURP 200V 20A D2PAK |
Vishay | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 20A | 1.3 V @ 20 A | 100 µA @ 200 V | — | 160 ns | -40°C ~ 150°C | — |
|
20ETF02STRR
DIODE GEN PURP 200V 20A D2PAK |
Vishay | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 20A | 1.3 V @ 20 A | 100 µA @ 200 V | — | 160 ns | -40°C ~ 150°C | — |
|
20ETF04
DIODE GEN PURP 400V 20A TO220AC |
Vishay | Obsolete | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 20A | 1.3 V @ 20 A | 100 µA @ 400 V | — | 160 ns | -40°C ~ 150°C | ✓ |
|
20ETF04FP
DIODE GEN PURP 400V 20A TO220FP |
Vishay | Obsolete | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 20A | 1.3 V @ 20 A | 100 µA @ 400 V | — | 160 ns | -40°C ~ 150°C | ✓ |
|
20ETF04S
DIODE GEN PURP 400V 20A D2PAK |
Vishay | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 20A | 1.3 V @ 20 A | 100 µA @ 400 V | — | 160 ns | -40°C ~ 150°C | — |
|
20ETF04STRL
DIODE GEN PURP 400V 20A D2PAK |
Vishay | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 20A | 1.3 V @ 20 A | 100 µA @ 400 V | — | 160 ns | -40°C ~ 150°C | — |
|
20ETF06
DIODE GEN PURP 600V 20A TO220AC |
Vishay | Obsolete | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 20A | 1.3 V @ 20 A | 100 µA @ 600 V | — | 160 ns | -40°C ~ 150°C | ✓ |
|
20ETF06FP
DIODE GEN PURP 600V 20A TO220FP |
Vishay | Obsolete | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 20A | 1.3 V @ 20 A | 100 µA @ 600 V | — | 160 ns | -40°C ~ 150°C | ✓ |
|
20ETF06S
DIODE GEN PURP 600V 20A D2PAK |
Vishay | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 20A | 1.3 V @ 20 A | 100 µA @ 600 V | — | 160 ns | -40°C ~ 150°C | — |
|
20ETF06STRL
DIODE GEN PURP 600V 20A D2PAK |
Vishay | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 20A | 1.3 V @ 20 A | 100 µA @ 600 V | — | 160 ns | -40°C ~ 150°C | — |
|
20ETF06STRR
DIODE GEN PURP 600V 20A D2PAK |
Vishay | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 20A | 1.3 V @ 20 A | 100 µA @ 600 V | — | 160 ns | -40°C ~ 150°C | — |
|
20ETF08
DIODE GEN PURP 800V 20A TO220AC |
Vishay | Obsolete | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Standard | 20A | 1.31 V @ 20 A | 100 µA @ 800 V | — | 400 ns | -40°C ~ 150°C | ✓ |
|
20ETF08S
DIODE GEN PURP 800V 20A D2PAK |
Vishay | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Standard | 20A | 1.31 V @ 20 A | 100 µA @ 800 V | — | 400 ns | -40°C ~ 150°C | ✓ |
|
20ETF08STRL
DIODE GEN PURP 800V 20A D2PAK |
Vishay | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Standard | 20A | 1.31 V @ 20 A | 100 µA @ 800 V | — | 400 ns | -40°C ~ 150°C | — |
|
20ETF08STRR
DIODE GEN PURP 800V 20A D2PAK |
Vishay | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Standard | 20A | 1.31 V @ 20 A | 100 µA @ 800 V | — | 400 ns | -40°C ~ 150°C | — |
|
20ETF10
DIODE GEN PURP 1KV 20A TO220AC |
Vishay | Obsolete | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 20A | 1.31 V @ 20 A | 100 µA @ 1000 V | — | 400 ns | -40°C ~ 150°C | ✓ |
|
20ETF10FP
DIODE GEN PURP 1KV 20A TO220FP |
Vishay | Obsolete | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 20A | 1.31 V @ 20 A | 100 µA @ 1000 V | — | 400 ns | — | — |
|
20ETF10S
DIODE GEN PURP 1KV 20A D2PAK |
Vishay | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 20A | 1.31 V @ 20 A | 100 µA @ 1000 V | — | 400 ns | -40°C ~ 150°C | — |
|
20ETF10STRL
DIODE GEN PURP 1KV 20A D2PAK |
Vishay | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 20A | 1.31 V @ 20 A | 100 µA @ 1000 V | — | 400 ns | -40°C ~ 150°C | — |
|
20ETF10STRR
DIODE GEN PURP 1KV 20A D2PAK |
Vishay | Obsolete | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 20A | 1.31 V @ 20 A | 100 µA @ 1000 V | — | 400 ns | -40°C ~ 150°C | — |
|
20ETF12
DIODE GEN PURP 1.2KV 20A TO220AC |
Vishay | Obsolete | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 1200 V | Standard | 20A | 1.31 V @ 20 A | 100 µA @ 1200 V | — | 400 ns | -40°C ~ 150°C | ✓ |