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Part Status

Mounting Type

Package / Case

Supplier Device Package

Speed

Voltage - DC Reverse (Vr) (Max)

Diode Type

Current - Average Rectified (Io)

Voltage - Forward (Vf) (Max) @ If

Current - Reverse Leakage @ Vr

Capacitance @ Vr, F

Reverse Recovery Time (trr)

Operating Temperature - Junction

Komponentler

10,000 sonuç · Sayfa 103/200
Parça No Üretici Part Status Mounting Type Package / Case Supplier Device Package Speed Voltage - DC Reverse (Vr) (Max) Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Capacitance @ Vr, F Reverse Recovery Time (trr) Operating Temperature - Junction Datasheet
1SS400S9TE61

DIODE GENERAL PURPOSE SMD

ROHM Semiconductor Obsolete — — — — — — — — — — — — —
1SS400SMFHT2R

SWITCHING DIODES (CORRESPONDS TO

ROHM Semiconductor Active Surface Mount SC-79, SOD-523 EMD2 Small Signal =< 200mA (Io), Any Speed 80 V Standard 100mA 1.2 V @ 100 mA 100 nA @ 80 V 3pF @ 500mV, 1MHz 4 ns 150°C (Max) ✓
1SS400SMT2R

DIODE GEN PURP 80V 100MA EMD2

ROHM Semiconductor Active Surface Mount SC-79, SOD-523 EMD2 Small Signal =< 200mA (Io), Any Speed 80 V Standard 100mA 1.2 V @ 100 mA 100 nA @ 80 V 3pF @ 0.5V, 1MHz 4 ns 150°C (Max) —
1SS400T1G

DIODE GEN PURP 100V 200MA SOD523

onsemi Active Surface Mount SC-79, SOD-523 SOD-523 Small Signal =< 200mA (Io), Any Speed 100 V Standard 200mA (DC) 1.2 V @ 100 mA 100 nA @ 80 V 3pF @ 0V, 1MHz 4 ns -55°C ~ 150°C —
1SS400T5G

DIODE GEN PURP 100V 200MA SOD523

onsemi Active Surface Mount SC-79, SOD-523 SOD-523 Fast Recovery =< 500ns, > 200mA (Io) 100 V Standard 200mA (DC) 1.2 V @ 100 mA 100 nA @ 80 V 3pF @ 0V, 1MHz 4 ns -55°C ~ 150°C —
1SS400T9TE61

DIODE GENERAL PURPOSE SMD

ROHM Semiconductor Obsolete — — — — — — — — — — — — —
1SS400TE61

DIODE GEN PURP 80V 100MA EMD2

ROHM Semiconductor Obsolete Surface Mount SC-79, SOD-523 EMD2 Small Signal =< 200mA (Io), Any Speed 80 V Standard 100mA 1.2 V @ 100 mA 100 nA @ 80 V 3pF @ 0.5V, 1MHz 4 ns 125°C (Max) ✓
1SS400UCTE61

DIODE GENERAL PURPOSE SMD

ROHM Semiconductor Obsolete — — — — — — — — — — — — —
1SS400UNTE61

DIODE GENERAL PURPOSE SMD

ROHM Semiconductor Obsolete — — — — — — — — — — — — —
1SS400ZTTE61

DIODE GENERAL PURPOSE SMD

ROHM Semiconductor Obsolete — — — — — — — — — — — — —
1SS401(TE85L,F)

DIODE SCHOTTKY 20V 300MA SC70

Toshiba Electronic Devices and Storage Corporation Active Surface Mount SC-70, SOT-323 SC-70 Fast Recovery =< 500ns, > 200mA (Io) 20 V Schottky 300mA 450 mV @ 300 mA 50 µA @ 20 V 46pF @ 0V, 1MHz — 125°C (Max) ✓
1SS403,H3F

DIODE GEN PURP 200V 100MA USC

Toshiba Electronic Devices and Storage Corporation Active Surface Mount SC-76, SOD-323 USC Small Signal =< 200mA (Io), Any Speed 200 V Standard 100mA 1.2 V @ 100 mA 1 µA @ 200 V 3pF @ 0V, 1MHz 60 ns 125°C (Max) —
1SS403E,L3F

SINGLE SWITCHING DIODE 200V 0.1A

Toshiba Electronic Devices and Storage Corporation Active Surface Mount SC-79, SOD-523 ESC Small Signal =< 200mA (Io), Any Speed 200 V Standard 100mA 1.2 V @ 100 mA 1 µA @ 200 V 3pF @ 0V, 1MHz 60 ns 150°C (Max) ✓
1SS404,H3F

DIODE SCHOTTKY 20V 300MA USC

Toshiba Electronic Devices and Storage Corporation Active Surface Mount SC-76, SOD-323 USC Fast Recovery =< 500ns, > 200mA (Io) 20 V Schottky 300mA 450 mV @ 300 mA 50 µA @ 20 V 46pF @ 0V, 1MHz — 125°C (Max) ✓
1SS405

SCHOTTKY SOD-523 25V 0.05A

Diotec Semiconductor Active Surface Mount SC-79, SOD-523 SOD-523 Fast Recovery =< 500ns, > 200mA (Io) 20 V Schottky 50mA 550 mV @ 50 mA 500 nA @ 20 V 3.9pF @ 0V, 1MHz — -55°C ~ 125°C —
1SS405

SchottkyD, 25V, 0.05A

DComponents Active Surface Mount SC-79, SOD-523 SOD-523 Fast Recovery =< 500ns, > 200mA (Io) 20 V Schottky 50mA 550 mV @ 50 mA 500 nA @ 20 V 3.9pF @ 0V, 1MHz — -55°C ~ 125°C —
1SS405,H3F

DIODE SCHOTTKY 20V 50MA ESC

Toshiba Electronic Devices and Storage Corporation Active Surface Mount SC-79, SOD-523 ESC Small Signal =< 200mA (Io), Any Speed 20 V Schottky 50mA 550 mV @ 50 mA 500 nA @ 20 V 3.9pF @ 0V, 1MHz — 125°C (Max) ✓
1SS406,H3F

SMALL SIGNAL SCHOTTKY BARRIER DI

Toshiba Electronic Devices and Storage Corporation Active Surface Mount SC-76, SOD-323 USC Small Signal =< 200mA (Io), Any Speed 20 V Schottky 50mA 550 mV @ 50 mA 500 nA @ 20 V 3.9pF @ 0V, 1MHz — 125°C (Max) ✓
1SS413,L3M

DIODE SCHOTTKY 20V 50MA FSC

Toshiba Electronic Devices and Storage Corporation Active Surface Mount 2-SMD, Flat Lead fSC Small Signal =< 200mA (Io), Any Speed 20 V Schottky 50mA 550 mV @ 50 mA 500 nA @ 20 V 3.9pF @ 0V, 1MHz — 125°C (Max) ✓
1SS413CT,L3F

DIODE SCHOTTKY 20V 50MA SOD882

Toshiba Electronic Devices and Storage Corporation Active Surface Mount SOD-882 SOD-882 Small Signal =< 200mA (Io), Any Speed 20 V Schottky 50mA 550 mV @ 50 mA 500 nA @ 20 V 3.9pF @ 0V, 1MHz — -55°C ~ 125°C ✓
1SS416,L3M

DIODE SCHOTTKY 30V 100MA SOD923

Toshiba Electronic Devices and Storage Corporation Active Surface Mount SOD-923 SOD-923 Small Signal =< 200mA (Io), Any Speed 30 V Schottky 100mA 500 mV @ 100 mA 50 µA @ 30 V 15pF @ 0V, 1MHz — 125°C (Max) ✓
1SS416CT,L3F

DIODE SCHOTTKY 30V 100MA CST2

Toshiba Electronic Devices and Storage Corporation Active Surface Mount SOD-882 CST2 Small Signal =< 200mA (Io), Any Speed 30 V Schottky 100mA 500 mV @ 100 mA 50 µA @ 30 V 15pF @ 0V, 1MHz — 125°C (Max) ✓
1SS417,L3M

DIODE SCHOTTKY 40V 100MA FSC

Toshiba Electronic Devices and Storage Corporation Active Surface Mount 2-SMD, Flat Lead fSC Small Signal =< 200mA (Io), Any Speed 40 V Schottky 100mA 620 mV @ 50 mA 5 µA @ 40 V 15pF @ 0V, 1MHz — 125°C (Max) ✓
1SS417CT,L3F

DIODE SCHOTTKY 40V 100MA FSC

Toshiba Electronic Devices and Storage Corporation Active Surface Mount 2-SMD, Flat Lead fSC Small Signal =< 200mA (Io), Any Speed 40 V Schottky 100mA 620 mV @ 100 mA 5 µA @ 40 V 15pF @ 0V, 1MHz — 125°C (Max) ✓
1SS417FN2_R1_00001

SURFACE MOUNT SCHOTTKY BARRIER

PANJIT Active Surface Mount 2-UFDFN DFN1006-2 Small Signal =< 200mA (Io), Any Speed 40 V Schottky 100mA 620 mV @ 100 mA 5 µA @ 40 V 10pF @ 0V, 1MHz — -55°C ~ 125°C —
1SS417TM_R1_00001

SURFACE MOUNT SCHOTTKY BARRIER

PANJIT Active Surface Mount SOD-923 SOD-923 Small Signal =< 200mA (Io), Any Speed 40 V Schottky 100mA 620 mV @ 50 mA 5 µA @ 40 V 15pF @ 0V, 1MHz — -55°C ~ 125°C —
1SS422(TE85L,F)

SMALL-SIGNAL SCHOTTKY BARRIER DI

Toshiba Electronic Devices and Storage Corporation Active Surface Mount SC-75, SOT-416 SSM Small Signal =< 200mA (Io), Any Speed 30 V Schottky 100mA 500 mV @ 100 mA 50 µA @ 30 V 15pF @ 0V, 1MHz — 125°C (Max) ✓
1SS424(TPL3,F)

DIODE SCHOTTKY 20V 200MA SSM

Toshiba Electronic Devices and Storage Corporation Active Surface Mount SC-79, SOD-523 ESC Small Signal =< 200mA (Io), Any Speed 20 V Schottky 200mA 500 mV @ 200 mA 50 µA @ 20 V 20pF @ 0V, 1MHz — 125°C (Max) ✓
1SS427,L3M

DIODE GEN PURP 80V 100MA SOD923

Toshiba Electronic Devices and Storage Corporation Active Surface Mount SOD-923 SOD-923 Small Signal =< 200mA (Io), Any Speed 80 V Standard 100mA 1.2 V @ 100 mA 500 nA @ 80 V 0.3pF @ 0V, 1MHz 1.6 ns -55°C ~ 150°C ✓
1SS5004WS

DIODE SOD-323 400V 0.22A 100NS

DComponents Active Surface Mount SC-90, SOD-323F SOD-323 Fast Recovery =< 500ns, > 200mA (Io) 400 V Standard 225mA 1.25 V @ 200 mA 100 nA @ 240 V 5pF @ 0V, 1MHz 100 ns -55°C ~ 150°C ✓
1SS54

RECTIFIER DIODE, 0.1A, 75V

Rochester Electronics Active Through Hole DO-204AH, DO-35, Axial DO-35 — 50 V Standard 100mA 700 mV @ 1 mA 100 nA @ 50 V 5pF @ 0V, 1MHz 20 ns 200°C (Max) —
1SS54-TB

RECTIFIER DIODE, 0.1A, 75V

Rochester Electronics Active Through Hole DO-204AH, DO-35, Axial DO-35 — 50 V Standard 100mA 700 mV @ 1 mA 100 nA @ 50 V 5pF @ 0V, 1MHz 20 ns 200°C (Max) —
1SS55-AZ

RECTIFIER DIODE, 0.1A, 100V

Rochester Electronics Active Through Hole DO-204AH, DO-35, Axial DO-35 — 75 V Standard 100mA 700 mV @ 1 mA 100 nA @ 75 V 4pF @ 0V, 1MHz 20 ns 200°C (Max) —
1SS55-T4-AZ

RECTIFIER DIODE, 0.1A, 100V

Rochester Electronics Active Through Hole DO-204AH, DO-35, Axial DO-35 — 75 V Standard 100mA 700 mV @ 1 mA 100 nA @ 75 V 4pF @ 0V, 1MHz 20 ns 200°C (Max) —
1SS81RE-E

RECTIFIER DIODE, 0.2A

Rochester Electronics Active Through Hole DO-204AH, DO-35, Axial DO-35 — 150 V — 200mA 1 V @ 100 mA 200 nA @ 150 V 1.5pF @ 0V, 1MHz 100 ns 175°C —
1SS81TA-E

RECTIFIER DIODE, 0.2A

Rochester Electronics Active Through Hole DO-204AH, DO-35, Axial DO-35 — 150 V — 200mA 1 V @ 100 mA 200 nA @ 150 V 1.5pF @ 0V, 1MHz 100 ns 175°C —
1SS81TD-E

RECTIFIER DIODE, 0.2A

Rochester Electronics Active Through Hole DO-204AH, DO-35, Axial DO-35 — 150 V — 200mA 1 V @ 100 mA 200 nA @ 150 V 1.5pF @ 0V, 1MHz 100 ns 175°C —
1SS82RE-E

RECTIFIER DIODE, 0.2A

Rochester Electronics Active Through Hole DO-204AH, DO-35, Axial DO-35 — 200 V — 200mA 1 V @ 100 mA 200 nA @ 200 V 1.5pF @ 0V, 1MHz 100 ns 175°C —
1SS82TA-E

RECTIFIER DIODE, 0.2A

Rochester Electronics Active Through Hole DO-204AH, DO-35, Axial DO-35 — 200 V — 200mA 1 V @ 100 mA 200 nA @ 200 V 1.5pF @ 0V, 1MHz 100 ns 175°C —
1SS82TD-E

RECTIFIER DIODE, 0.2A

Rochester Electronics Active Through Hole DO-204AH, DO-35, Axial DO-35 — 200 V — 200mA 1 V @ 100 mA 200 nA @ 200 V 1.5pF @ 0V, 1MHz 100 ns 175°C —
1SS83TD-E

RECTIFIER DIODE, 0.2A

Rochester Electronics Active Through Hole DO-204AH, DO-35, Axial DO-35 — 250 V — 200mA 1 V @ 100 mA 200 nA @ 250 V 1.5pF @ 0V, 1MHz 100 ns 175°C —
1SS88-E

RECTIFIER DIODE

Rochester Electronics Active Through Hole DO-204AH, DO-35, Axial DO-35 — 250 V — 200mA 1 V @ 100 mA 200 nA @ 250 V 1.5pF @ 0V, 1MHz 100 ns 175°C —
1SS88TD-E

RECTIFIER DIODE

Rochester Electronics Active Through Hole DO-204AH, DO-35, Axial DO-35 — 250 V — 200mA 1 V @ 100 mA 200 nA @ 250 V 1.5pF @ 0V, 1MHz 100 ns 175°C —
1T1G

DIODE GEN PURP 1A 50V TS-1

Taiwan Semiconductor Active Through Hole T-18, Axial TS-1 Standard Recovery >500ns, > 200mA (Io) 50 V Standard 1A (DC) 1.1 V @ 1 A 5 µA @ 50 V 10pF @ 4V, 1MHz — -55°C ~ 150°C —
1T1G A0G

DIODE GEN PURP 50V 1A TS-1

Taiwan Semiconductor Active Through Hole T-18, Axial TS-1 Standard Recovery >500ns, > 200mA (Io) 50 V Standard 1A 1.1 V @ 1 A 5 µA @ 50 V 10pF @ 4V, 1MHz — -55°C ~ 150°C —
1T1G A1G

DIODE GEN PURP 50V 1A TS-1

Taiwan Semiconductor Active Through Hole T-18, Axial TS-1 Standard Recovery >500ns, > 200mA (Io) 50 V Standard 1A 1.1 V @ 1 A 5 µA @ 50 V 10pF @ 4V, 1MHz — -55°C ~ 150°C —
1T1G R0G

DIODE GEN PURP 50V 1A TS-1

Taiwan Semiconductor Market Through Hole T-18, Axial TS-1 Standard Recovery >500ns, > 200mA (Io) 50 V Standard 1A 1.1 V @ 1 A 5 µA @ 50 V 10pF @ 4V, 1MHz — -55°C ~ 150°C —
1T2G

DIODE GEN PURP 1A 100V TS-1

Taiwan Semiconductor Active Through Hole T-18, Axial TS-1 Standard Recovery >500ns, > 200mA (Io) 100 V Standard 1A (DC) 1.1 V @ 1 A 5 µA @ 100 V 10pF @ 4V, 1MHz — -55°C ~ 150°C —
1T2G A0G

DIODE GEN PURP 100V 1A TS-1

Taiwan Semiconductor Active Through Hole T-18, Axial TS-1 Standard Recovery >500ns, > 200mA (Io) 100 V Standard 1A 1.1 V @ 1 A 5 µA @ 100 V 10pF @ 4V, 1MHz — -55°C ~ 150°C —
1T2G A1G

DIODE GEN PURP 100V 1A TS-1

Taiwan Semiconductor Active Through Hole T-18, Axial TS-1 Standard Recovery >500ns, > 200mA (Io) 100 V Standard 1A 1.1 V @ 1 A 5 µA @ 100 V 10pF @ 4V, 1MHz — -55°C ~ 150°C —

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