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Komponentler
10,000 sonuç · Sayfa 45/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4005T-G
DIODE GEN PURP 600V 1A DO41 |
Comchip Technology | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4005T/R
STD 1A, CASE TYPE: DO-41 |
EIC Semiconductor, Inc. | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 2 µs | -65°C ~ 175°C | — |
|
1N4005TA
DIODE GEN PURP 600V 1A DO41 |
SMC Diode Solutions | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | — | -65°C ~ 125°C | — |
|
1N4005W
DIODE GEN 1A 600V SOD-123F |
Rectron USA | Active | Surface Mount | SOD-123F | SOD-123F | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 600 V | 8pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N4006
R-SI 800V 1A |
NTE Electronics, Inc. | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 800 V | — | 2 µs | -55°C ~ 150°C | — |
|
1N4006
ST Rect, 800V, 1A |
DComponents | Active | Through Hole | DO-204AC, DO-41, Axial | DO-41/DO-204AC | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 800 V | — | 1.5 µs | -50°C ~ 175°C | — |
|
1N4006
DIODE GEN PURP 800V 1A DO41 |
onsemi | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 800 V | 15pF @ 4V, 1MHz | — | -55°C ~ 175°C | — |
|
1N4006
DIODE GEN PURP 800V 1A DO41 |
Micro Commercial Components (MCC) | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 800 V | — | 2 µs | -55°C ~ 150°C | — |
|
1N4006
DIODE GEN PURP 1000V 1A DO-41 |
Rectron USA | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1 V @ 1 A | 200 nA @ 1000 V | 15pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N4006 BK
DIODE GEN PURP 800V 1A DO41 |
Central Semiconductor | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 800 V | — | — | -65°C ~ 175°C | ✓ |
|
1N4006 TR
DIODE GEN PURP 800V 1A DO41 |
Central Semiconductor | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 800 V | — | — | -65°C ~ 175°C | ✓ |
|
1N4006-E3/53
DIODE GEN PURP 800V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 800 V | 15pF @ 4V, 1MHz | — | -50°C ~ 150°C | ✓ |
|
1N4006-E3/54
DIODE GEN PURP 800V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 800 V | 15pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N4006-E3/73
DIODE GEN PURP 800V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 800 V | 15pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N4006-G
DIODE GEN PURP 800V 1A DO41 |
Comchip Technology | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 800 V | 15pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4006-N-0-1-BP
DIODE GEN PURP 800V 1A DO-41 |
Micro Commercial Components (MCC) | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A (DC) | 1 V @ 1 A | 5 µA @ 800 V | 15pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4006-N-0-2-BP
DIODE GEN PURP 800V 1A DO-41 |
Micro Commercial Components (MCC) | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A (DC) | 1 V @ 1 A | 5 µA @ 800 V | 15pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4006-N-0-3-AP
DIODE GEN PURP 800V 1A DO-41 |
Micro Commercial Components (MCC) | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A (DC) | 1 V @ 1 A | 5 µA @ 800 V | 15pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4006-N-0-4-AP
DIODE GEN PURP 800V 1A DO-41 |
Micro Commercial Components (MCC) | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A (DC) | 1 V @ 1 A | 5 µA @ 800 V | 15pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4006-N-2-1-BP
DIODE GEN PURP 800V 1A DO-41 |
Micro Commercial Components (MCC) | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A (DC) | 1 V @ 1 A | 5 µA @ 800 V | 15pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4006-N-2-2-BP
DIODE GEN PURP 800V 1A DO-41 |
Micro Commercial Components (MCC) | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A (DC) | 1 V @ 1 A | 5 µA @ 800 V | 15pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4006-N-2-3-AP
DIODE GEN PURP 800V 1A DO-41 |
Micro Commercial Components (MCC) | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A (DC) | 1 V @ 1 A | 5 µA @ 800 V | 15pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4006-N-2-4-AP
DIODE GEN PURP 800V 1A DO-41 |
Micro Commercial Components (MCC) | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A (DC) | 1 V @ 1 A | 5 µA @ 800 V | 15pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4006-T
DIODE GEN PURP 800V 1A DO41 |
Diodes Incorporated | Not For New Designs | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 800 V | 8pF @ 4V, 1MHz | — | -65°C ~ 150°C | ✓ |
|
1N4006-TP
DIODE GEN PURP 800V 1A DO41 |
Micro Commercial Components (MCC) | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 800 V | — | 2 µs | -55°C ~ 150°C | — |
|
1N4006/54
DIODE GEN PURP 800V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 800 V | 15pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4006B-G
DIODE GEN PURP 800V 1A DO41 |
Comchip Technology | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 800 V | 15pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4006BULK
STD 1A, CASE TYPE: DO-41 |
EIC Semiconductor, Inc. | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 800 V | 15pF @ 4V, 1MHz | 2 µs | -65°C ~ 175°C | — |
|
1N4006E-E3/54
DIODE GEN PURP 800V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 800 V | 15pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N4006E-E3/73
DIODE GEN PURP 800V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 800 V | 15pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4006FF
DIODE GEN PURP 800V 1A DO41 |
onsemi | Obsolete | Through Hole | DO-204AL, DO-41, Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 800 V | — | — | -65°C ~ 175°C | ✓ |
|
1N4006FFG
DIODE GEN PURP 800V 1A AXIAL |
onsemi | Active | Through Hole | DO-204AL, DO-41, Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 800 V | — | — | -65°C ~ 175°C | ✓ |
|
1N4006G
DIODE GEN PURP 800V 1A AXIAL |
onsemi | Active | Through Hole | DO-204AL, DO-41, Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 800 V | — | — | -65°C ~ 175°C | — |
|
1N4006G
DIODE GEN PURP 800V 1A DO41 |
SMC Diode Solutions | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 800 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | — |
|
1N4006G
DIODE GP GLASS 800V 1A DO-41 |
Rectron USA | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1 V @ 1 A | 200 nA @ 800 V | 15pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N4006G A0G
DIODE GEN PURP 800V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 800 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4006G B0G
DIODE GEN PURP 800V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 800 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4006G BK
DIODE GEN PURPOSE DO41 |
Central Semiconductor | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | — | — | — | — | — | — | — | — | — | ✓ |
|
1N4006G R0G
DIODE GEN PURP 800V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 800 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4006G R1G
DIODE GEN PURP 800V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 800 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4006G-T
DIODE GEN PURP 800V 1A DO41 |
Diodes Incorporated | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 800 V | 8pF @ 4V, 1MHz | 2 µs | -65°C ~ 175°C | ✓ |
|
1N4006GA0
1A,800V,STD.GLASS PASSIVATED REC |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 800 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N4006GHA0G
DIODE GEN PURP 800V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 800 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4006GHB0G
DIODE GEN PURP 800V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 800 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4006GHR0G
DIODE GEN PURP 800V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 800 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4006GHR1G
DIODE GEN PURP 800V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 800 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4006GL-T
DIODE GEN PURP 800V 1A DO41 |
Diodes Incorporated | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 800 V | 8pF @ 4V, 1MHz | 2 µs | -65°C ~ 175°C | ✓ |
|
1N4006GP
DIODE GEN PURP 800V 1A DO41 |
onsemi | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 800 V | 15pF @ 4V, 1MHz | — | -55°C ~ 175°C | ✓ |
|
1N4006GP-E3/54
DIODE GEN PURP 800V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 800 V | 8pF @ 4V, 1MHz | 2 µs | -65°C ~ 175°C | — |
|
1N4006GP-E3/73
DIODE GEN PURP 800V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 800 V | 8pF @ 4V, 1MHz | 2 µs | -65°C ~ 175°C | — |