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Komponent
49,938
Marka
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Part Status

Mounting Type

Package / Case

Supplier Device Package

Speed

Voltage - DC Reverse (Vr) (Max)

Diode Type

Current - Average Rectified (Io)

Voltage - Forward (Vf) (Max) @ If

Current - Reverse Leakage @ Vr

Capacitance @ Vr, F

Reverse Recovery Time (trr)

Operating Temperature - Junction

Komponentler

10,000 sonuç · Sayfa 47/200
Parça No Üretici Part Status Mounting Type Package / Case Supplier Device Package Speed Voltage - DC Reverse (Vr) (Max) Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Capacitance @ Vr, F Reverse Recovery Time (trr) Operating Temperature - Junction Datasheet
1N4007FFG

DIODE GEN PURP 1000V 1A DO41

onsemi Active Through Hole DO-204AL, DO-41, Axial Axial Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 10 µA @ 1000 V — — -65°C ~ 175°C ✓
1N4007FLTR

STANDARD RECTIFIER 1000V SOD-123

SMC Diode Solutions Active Surface Mount SOD-123F SOD-123FL Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V 15pF @ 4V, 1MHz — -65°C ~ 150°C —
1N4007G

DIODE GEN PURP 1KV 1A DO41

onsemi Active Through Hole DO-204AL, DO-41, Axial Axial Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 10 µA @ 1000 V — — -65°C ~ 175°C ✓
1N4007G

DIODE GP GLASS 1000V 1A R-1

Rectron USA Active Through Hole DO-204AL, DO-41, Axial DO-41 Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1 V @ 1 A 200 nA @ 1000 V 15pF @ 4V, 1MHz — -65°C ~ 175°C ✓
1N4007G A0G

DIODE GEN PURP 1KV 1A DO204AL

Taiwan Semiconductor Active Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1 V @ 1 A 5 µA @ 1000 V 10pF @ 4V, 1MHz — -55°C ~ 150°C —
1N4007G B0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Active Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1 V @ 1 A 5 µA @ 1000 V 10pF @ 4V, 1MHz — -55°C ~ 150°C —
1N4007G L

GENERAL DIODE 1KV 1A DO-41

NextGen Components Active Through Hole DO-204AL, DO-41, Axial DO-41 — 1000 V Standard — 1.1 V @ 1 A 5 µA @ 1000 V 15pF @ 4V, 1MHz — -65°C ~ 150°C ✓
1N4007G R0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Active Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1 V @ 1 A 5 µA @ 1000 V 10pF @ 4V, 1MHz — -55°C ~ 150°C —
1N4007G R1G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Active Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1 V @ 1 A 5 µA @ 1000 V 10pF @ 4V, 1MHz — -55°C ~ 150°C —
1N4007G-D1-3000

DIODE GEN PURP 1000V 1A DO41

YANGJIE Active Through Hole DO-204AL, DO-41, Axial DO-41 Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 2.5 µA @ 1000 V 6pF @ 4V, 1MHz — -55°C ~ 150°C —
1N4007G-T

DIODE GEN PURP 1KV 1A DO41

Diodes Incorporated Active Through Hole DO-204AL, DO-41, Axial DO-41 Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1 V @ 1 A 5 µA @ 1000 V 8pF @ 4V, 1MHz 2 µs -65°C ~ 175°C ✓
1N4007G-T

DIODE GEN PURP GLASS 1000V 1A

Rectron USA Active Through Hole DO-204AL, DO-41, Axial DO-41 Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1 V @ 1 A 200 nA @ 1000 V 15pF @ 4V, 1MHz — -65°C ~ 175°C ✓
1N4007GH A0G

DIODE GEN PURP 1A 1000V DO-41

Taiwan Semiconductor Active Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A (DC) 1 V @ 1 A 5 µA @ 1000 V 10pF @ 4V, 1MHz — -55°C ~ 150°C —
1N4007GHB0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Market Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1 V @ 1 A 5 µA @ 1000 V 10pF @ 4V, 1MHz — -55°C ~ 150°C —
1N4007GHR0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Active Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1 V @ 1 A 5 µA @ 1000 V 10pF @ 4V, 1MHz — -55°C ~ 150°C —
1N4007GHR1G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Active Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1 V @ 1 A 5 µA @ 1000 V 10pF @ 4V, 1MHz — -55°C ~ 150°C —
1N4007GL-T

DIODE GEN PURP 1KV 1A DO41

Diodes Incorporated Obsolete Through Hole DO-204AL, DO-41, Axial DO-41 Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1 V @ 1 A 5 µA @ 1000 V 8pF @ 4V, 1MHz 2 µs -65°C ~ 175°C ✓
1N4007GP

ST Rect, 1000V, 1A

DComponents Active Through Hole DO-204AC, DO-41, Axial DO-41/DO-204AC Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V — 1.5 µs -50°C ~ 175°C ✓
1N4007GP

DIODE GEN PURP 1KV 1A DO41

onsemi Obsolete Through Hole DO-204AL, DO-41, Axial DO-41 Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 10 µA @ 1000 V 15pF @ 4V, 1MHz — -55°C ~ 175°C ✓
1N4007GP-AQ

DIODE STD DO-41 1000V 1A

Diotec Semiconductor Active Through Hole DO-204AC, DO-41, Axial DO-41/DO-204AC Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V — 1.5 µs -50°C ~ 175°C —
1N4007GP-AQ

ST Rect, 1000V, 1A

DComponents Active Through Hole DO-204AC, DO-41, Axial DO-41/DO-204AC Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V — 1.5 µs -50°C ~ 175°C ✓
1N4007GP-E3/53

DIODE GEN PURP 1KV 1A DO204AL

Vishay Active Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V 8pF @ 4V, 1MHz 2 µs -65°C ~ 175°C ✓
1N4007GP-E3/54

DIODE GEN PURP 1KV 1A DO204AL

Vishay Active Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V 8pF @ 4V, 1MHz 2 µs -50°C ~ 150°C —
1N4007GP-E3/73

DIODE GEN PURP 1KV 1A DO204AL

Vishay Active Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V 8pF @ 4V, 1MHz 2 µs -65°C ~ 175°C ✓
1N4007GP-M3/54

DIODE GEN PURP 1KV 1A DO204AL

Vishay Obsolete Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V 15pF @ 4V, 1MHz — -50°C ~ 150°C ✓
1N4007GP-M3/73

DIODE GEN PURP 1KV 1A DO204AL

Vishay Obsolete Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V 15pF @ 4V, 1MHz — -50°C ~ 150°C ✓
1N4007GP-TP

DIODE GEN PURP 1KV 1A DO41

Micro Commercial Components (MCC) Active Through Hole DO-204AL, DO-41, Axial DO-41 Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V 15pF @ 4V, 1MHz 2 µs -55°C ~ 150°C ✓
1N4007GPE-E3/53

DIODE GEN PURP 1KV 1A DO204AL

Vishay Active Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V 8pF @ 4V, 1MHz 2 µs -65°C ~ 175°C ✓
1N4007GPE-E3/54

DIODE GEN PURP 1KV 1A DO204AL

Vishay Active Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V 8pF @ 4V, 1MHz 2 µs -65°C ~ 175°C ✓
1N4007GPE-E3/73

DIODE GEN PURP 1KV 1A DO204AL

Vishay Active Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V 8pF @ 4V, 1MHz 2 µs -65°C ~ 175°C ✓
1N4007GPE-E3/91

DIODE GEN PURP 1KV 1A DO204AL

Vishay Obsolete Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V 8pF @ 4V, 1MHz 2 µs -65°C ~ 175°C ✓
1N4007GPE-M3/54

DIODE GEN PURP 1KV 1A DO204AL

Vishay Obsolete Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V 15pF @ 4V, 1MHz — -50°C ~ 150°C ✓
1N4007GPE-M3/73

DIODE GEN PURP 1KV 1A DO204AL

Vishay Obsolete Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V 15pF @ 4V, 1MHz — -50°C ~ 150°C ✓
1N4007GPEHE3/53

DIODE GEN PURP 1KV 1A DO204AL

Vishay Obsolete Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V 8pF @ 4V, 1MHz 2 µs -65°C ~ 175°C ✓
1N4007GPEHE3/54

DIODE GEN PURP 1KV 1A DO204AL

Vishay Obsolete Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V 8pF @ 4V, 1MHz 2 µs -65°C ~ 175°C —
1N4007GPEHE3/73

DIODE GEN PURP 1KV 1A DO204AL

Vishay Obsolete Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V 8pF @ 4V, 1MHz 2 µs -65°C ~ 175°C —
1N4007GPEHE3/91

DIODE GEN PURP 1KV 1A DO204AL

Vishay Obsolete Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V 8pF @ 4V, 1MHz 2 µs -65°C ~ 175°C ✓
1N4007GPHE3/53

DIODE GEN PURP 1KV 1A DO204AL

Vishay Obsolete Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V 8pF @ 4V, 1MHz 2 µs -65°C ~ 175°C ✓
1N4007GPHE3/54

DIODE GEN PURP 1KV 1A DO204AL

Vishay Obsolete Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V 8pF @ 4V, 1MHz 2 µs -65°C ~ 175°C —
1N4007GPHE3/73

DIODE GEN PURP 1KV 1A DO204AL

Vishay Obsolete Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V 8pF @ 4V, 1MHz 2 µs -65°C ~ 175°C —
1N4007GPHM3/54

DIODE GEN PURP 1KV 1A DO204AL

Vishay Obsolete Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V 15pF @ 4V, 1MHz — -50°C ~ 150°C ✓
1N4007GPHM3/73

DIODE GEN PURP 1KV 1A DO204AL

Vishay Obsolete Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V 15pF @ 4V, 1MHz — -50°C ~ 150°C ✓
1N4007GPP BK

DIODE GEN PURP 1KV 1A DO41

Central Semiconductor Obsolete Through Hole DO-204AL, DO-41, Axial DO-41 Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V 8pF @ 4V, 1MHz 2 µs -65°C ~ 175°C ✓
1N4007GPP TR

DIODE GEN PURP 1KV 1A DO41

Central Semiconductor Obsolete Through Hole DO-204AL, DO-41, Axial DO-41 Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V 8pF @ 4V, 1MHz 2 µs -65°C ~ 175°C ✓
1N4007GTA

DIODE GEN PURP 1KV 1A DO41

SMC Diode Solutions Active Through Hole DO-204AL, DO-41, Axial DO-41 Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1 V @ 1 A 5 µA @ 1000 V 8pF @ 4V, 1MHz — -65°C ~ 175°C —
1N4007L-T

DIODE GEN PURP 1KV 1A DO41

Diodes Incorporated Obsolete Through Hole DO-204AL, DO-41, Axial DO-41 Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1 V @ 1 A 5 µA @ 1000 V 8pF @ 4V, 1MHz — -65°C ~ 150°C ✓
1N4007RL

DIODE GEN PURP 1KV 1A DO41

onsemi Obsolete Through Hole DO-204AL, DO-41, Axial Axial Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 10 µA @ 1000 V — — -65°C ~ 175°C —
1N4007RLG

DIODE GEN PURP 1000V 1A DO41

onsemi Active Through Hole DO-204AL, DO-41, Axial Axial Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 10 µA @ 1000 V — — -65°C ~ 175°C —
1N4007T-G

DIODE GEN PURP 1KV 1A DO41

Comchip Technology Active Through Hole DO-204AL, DO-41, Axial DO-41 Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1.1 V @ 1 A 5 µA @ 1000 V 15pF @ 4V, 1MHz — -55°C ~ 150°C —
1N4007TA

DIODE GEN PURP 1KV 1A DO41

SMC Diode Solutions Obsolete Through Hole DO-204AL, DO-41, Axial DO-41 Standard Recovery >500ns, > 200mA (Io) 1000 V Standard 1A 1 V @ 1 A 5 µA @ 1000 V 15pF @ 4V, 1MHz — -65°C ~ 125°C —

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