Diyotlar - Doğrultucular - Tekil
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Komponentler
10,000 sonuç · Sayfa 62/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4934G-T
DIODE GEN PURP 100V 1A DO41 |
Diodes Incorporated | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | — | 200 ns | -65°C ~ 150°C | — |
|
1N4934GH
DIODE GEN PURP 100V 1A DO41 |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A (DC) | 1.2 V @ 1 A | 5 µA @ 100 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4934GHA0G
DIODE GEN PURP 100V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4934GHB0G
DIODE GEN PURP 100V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4934GHR0G
DIODE GEN PURP 100V 1A DO204AL |
Taiwan Semiconductor | Market | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4934GHR1G
DIODE GEN PURP 100V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4934GP
DIODE GEN PURP 100V 1A DO41 |
onsemi | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | 12pF @ 4V, 1MHz | 150 ns | -50°C ~ 150°C | ✓ |
|
1N4934GP-AP
DIODE GPP FAST 1A DO-41 |
Micro Commercial Components (MCC) | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | — | — | 15pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | ✓ |
|
1N4934GP-E3/54
DIODE GEN PURP 100V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 175°C | ✓ |
|
1N4934GP-E3/73
DIODE GEN PURP 100V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 175°C | — |
|
1N4934GP-M3/54
DIODE GEN PURP 100V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 175°C | ✓ |
|
1N4934GP-M3/73
DIODE GEN PURP 100V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | 15pF @ 4V, 1MHz | 200 ns | — | ✓ |
|
1N4934GP-TP
DIODE GPP FAST 1A DO-41 |
Micro Commercial Components (MCC) | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | — | — | 15pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | ✓ |
|
1N4934GPE-E3/54
DIODE GEN PURP 100V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 175°C | ✓ |
|
1N4934GPE-E3/91
DIODE GEN PURP 100V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 175°C | ✓ |
|
1N4934GPEHE3/54
DIODE GEN PURP 100V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 175°C | — |
|
1N4934GPEHE3/91
DIODE GEN PURP 100V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 175°C | ✓ |
|
1N4934GPHE3/54
DIODE GEN PURP 100V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 175°C | ✓ |
|
1N4934GPHE3/73
DIODE GEN PURP 100V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 175°C | — |
|
1N4934L-T
DIODE GEN PURP 100V 1A DO41 |
Diodes Incorporated | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 150°C | ✓ |
|
1N4934RL
DIODE GEN PURP 100V 1A DO41 |
onsemi | Obsolete | Through Hole | DO-204AL, DO-41, Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | — | 300 ns | -65°C ~ 150°C | — |
|
1N4934RLG
DIODE GEN PURP 100V 1A DO41 |
onsemi | Active | Through Hole | DO-204AL, DO-41, Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | — | 300 ns | -65°C ~ 150°C | ✓ |
|
1N4935
Fast Rect, 200V, 1.00A, 200ns |
DComponents | Active | — | — | — | — | 200 V | Standard | 1A | — | — | — | 200 ns | — | ✓ |
|
1N4935
R-200PRV 1A |
NTE Electronics, Inc. | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 200 V | 12pF @ 4V, 1MHz | 150 ns | -50°C ~ 150°C | — |
|
1N4935
DIODE GEN PURP 200V 1A DO41 |
onsemi | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 200 V | 12pF @ 4V, 1MHz | 150 ns | -50°C ~ 150°C | ✓ |
|
1N4935-AP
DIODE GPP FAST 1A DO-41 |
Micro Commercial Components (MCC) | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | — | — | 15pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | ✓ |
|
1N4935-E3/54
DIODE GEN PURP 200V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 200 V | 12pF @ 4V, 1MHz | 200 ns | -50°C ~ 150°C | ✓ |
|
1N4935-E3/73
DIODE GEN PURP 200V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 200 V | 12pF @ 4V, 1MHz | 200 ns | -50°C ~ 150°C | — |
|
1N4935-T
DIODE GEN PURP 200V 1A DO41 |
Diodes Incorporated | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 200 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 150°C | ✓ |
|
1N4935-TP
DIODE GPP FAST 1A DO-41 |
Micro Commercial Components (MCC) | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | — | — | 15pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | ✓ |
|
1N4935BULK
FR 1A, CASE TYPE: DO-41 |
EIC Semiconductor, Inc. | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 200 V | 15pF @ 4V, 1MHz | 150 ns | -65°C ~ 150°C | ✓ |
|
1N4935G
DIODE GEN PURP 200V 1A DO41 |
Rochester Electronics | Active | Through Hole | DO-204AL, DO-41, Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 200 V | — | 300 ns | -65°C ~ 150°C | ✓ |
|
1N4935G
DIODE GEN PURP 200V 1A DO41 |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A (DC) | 1.2 V @ 1 A | 5 µA @ 200 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4935G A0G
DIODE GEN PURP 200V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 200 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4935G B0G
DIODE GEN PURP 200V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 200 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4935G R0G
DIODE GEN PURP 200V 1A DO204AL |
Taiwan Semiconductor | Market | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 200 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4935G R1G
DIODE GEN PURP 200V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 200 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4935G-T
DIODE GEN PURP 200V 1A DO41 |
Diodes Incorporated | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 200 V | — | 200 ns | -65°C ~ 150°C | ✓ |
|
1N4935GH
DIODE GEN PURP 200V 1A DO41 |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A (DC) | 1.2 V @ 1 A | 5 µA @ 200 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4935GHA0G
DIODE GEN PURP 200V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 200 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4935GHB0G
DIODE GEN PURP 200V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 200 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4935GHR0G
DIODE GEN PURP 200V 1A DO204AL |
Taiwan Semiconductor | Market | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 200 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4935GHR1G
DIODE GEN PURP 200V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 200 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4935GL-T
DIODE GEN PURP 200V 1A DO41 |
Diodes Incorporated | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 200 V | — | 200 ns | -65°C ~ 150°C | ✓ |
|
1N4935GP
RECTIFIER DIODE |
Rochester Electronics | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 200 V | 12pF @ 4V, 1MHz | 150 ns | -50°C ~ 150°C | — |
|
1N4935GP
DIODE GEN PURP 200V 1A DO41 |
onsemi | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 200 V | 12pF @ 4V, 1MHz | 150 ns | -50°C ~ 150°C | ✓ |
|
1N4935GP-AP
DIODE GPP FAST 1A DO-41 |
Micro Commercial Components (MCC) | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | — | — | 15pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | ✓ |
|
1N4935GP-E3/54
DIODE GEN PURP 200V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 200 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 175°C | ✓ |
|
1N4935GP-E3/73
DIODE GEN PURP 200V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 200 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 175°C | — |
|
1N4935GP-M3/54
DIODE GEN PURP 200V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 200 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 175°C | ✓ |