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Komponentler
10,000 sonuç · Sayfa 61/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4933
Fast Rect., 50V, 1.00A, 200ns |
DComponents | Active | — | — | — | — | 50 V | Standard | 1A | — | — | — | 200 ns | — | ✓ |
|
1N4933-AP
DIODE GPP FAST 1A DO-41 |
Micro Commercial Components (MCC) | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | — | — | 15pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | ✓ |
|
1N4933-E3/54
DIODE GEN PURP 50V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 50 V | 12pF @ 4V, 1MHz | 200 ns | -50°C ~ 150°C | ✓ |
|
1N4933-E3/73
DIODE GEN PURP 50V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 50 V | 12pF @ 4V, 1MHz | 200 ns | -50°C ~ 150°C | — |
|
1N4933-T
DIODE GEN PURP 50V 1A DO41 |
Diodes Incorporated | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 50 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 150°C | ✓ |
|
1N4933-TP
DIODE GPP FAST 1A DO-41 |
Micro Commercial Components (MCC) | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | — | — | 15pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | ✓ |
|
1N4933BULK
FR 1A, CASE TYPE: DO-41 |
EIC Semiconductor, Inc. | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 50 V | 15pF @ 4V, 1MHz | 150 ns | -65°C ~ 150°C | ✓ |
|
1N4933G
DIODE GEN PURP 50V 1A DO41 |
onsemi | Active | Through Hole | DO-204AL, DO-41, Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 50 V | — | 300 ns | -65°C ~ 150°C | — |
|
1N4933G
DIODE GEN PURP 50V 1A DO41 |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A (DC) | 1.2 V @ 1 A | 5 µA @ 50 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4933G A0G
DIODE GEN PURP 50V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 50 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4933G B0G
DIODE GEN PURP 50V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 50 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4933G R0G
DIODE GEN PURP 50V 1A DO204AL |
Taiwan Semiconductor | Market | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 50 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4933G R1G
DIODE GEN PURP 50V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 50 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4933G-T
DIODE GEN PURP 50V 1A DO41 |
Diodes Incorporated | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 50 V | — | 200 ns | -65°C ~ 150°C | ✓ |
|
1N4933GH
DIODE GEN PURP 50V 1A DO41 |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A (DC) | 1.2 V @ 1 A | 5 µA @ 50 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4933GHA0G
DIODE GEN PURP 50V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 50 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4933GHB0G
DIODE GEN PURP 50V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 50 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4933GHR0G
DIODE GEN PURP 50V 1A DO204AL |
Taiwan Semiconductor | Market | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 50 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4933GHR1G
DIODE GEN PURP 50V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 50 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4933GL-T
DIODE GEN PURP 50V 1A DO41 |
Diodes Incorporated | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 50 V | — | 200 ns | -65°C ~ 150°C | ✓ |
|
1N4933GP
RECTIFIER DIODE |
Rochester Electronics | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 50 V | 12pF @ 4V, 1MHz | 150 ns | -65°C ~ 175°C | — |
|
1N4933GP
DIODE GEN PURP 50V 1A DO41 |
onsemi | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 50 V | 12pF @ 4V, 1MHz | 150 ns | -65°C ~ 175°C | ✓ |
|
1N4933GP-AP
DIODE GPP FAST 1A DO-41 |
Micro Commercial Components (MCC) | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | — | — | 15pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | ✓ |
|
1N4933GP-E3/54
DIODE GEN PURP 50V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 50 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 175°C | ✓ |
|
1N4933GP-E3/73
DIODE GEN PURP 50V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 50 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 175°C | ✓ |
|
1N4933GP-M3/54
DIODE GEN PURP 50V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 50 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 175°C | ✓ |
|
1N4933GP-M3/73
DIODE GEN PURP 50V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 50 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 175°C | ✓ |
|
1N4933GP-TP
DIODE GPP FAST 1A DO-41 |
Micro Commercial Components (MCC) | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | — | — | 15pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | ✓ |
|
1N4933GPHE3/54
DIODE GEN PURP 50V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 50 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 175°C | — |
|
1N4933GPHE3/73
DIODE GEN PURP 50V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 50 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 175°C | — |
|
1N4933L-T
DIODE GEN PURP 50V 1A DO41 |
Diodes Incorporated | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 50 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 150°C | ✓ |
|
1N4933RL
DIODE GEN PURP 50V 1A DO41 |
onsemi | Obsolete | Through Hole | DO-204AL, DO-41, Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 50 V | — | 300 ns | -65°C ~ 150°C | — |
|
1N4933RLG
DIODE GEN PURP 50V 1A DO41 |
onsemi | Active | Through Hole | DO-204AL, DO-41, Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 50 V | — | 300 ns | -65°C ~ 150°C | ✓ |
|
1N4933T/R
FR 1A, CASE TYPE: DO-41 |
EIC Semiconductor, Inc. | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 50 V | 15pF @ 4V, 1MHz | 150 ns | -65°C ~ 150°C | — |
|
1N4934
Fast Rect., 100V, 1.00A, 200ns |
DComponents | Active | — | — | — | — | 100 V | Standard | 1A | — | — | — | 200 ns | — | ✓ |
|
1N4934
R-100PRV 1A |
NTE Electronics, Inc. | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | 12pF @ 4V, 1MHz | 150 ns | -50°C ~ 150°C | — |
|
1N4934
DIODE GEN PURP 100V 1A DO41 |
onsemi | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | 12pF @ 4V, 1MHz | 150 ns | -50°C ~ 150°C | ✓ |
|
1N4934-AP
DIODE GPP FAST 1A DO-41 |
Micro Commercial Components (MCC) | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | — | — | 15pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | ✓ |
|
1N4934-E3/54
DIODE GEN PURP 100V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | 12pF @ 4V, 1MHz | 200 ns | -50°C ~ 150°C | ✓ |
|
1N4934-E3/73
DIODE GEN PURP 100V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | 12pF @ 4V, 1MHz | 200 ns | -50°C ~ 150°C | ✓ |
|
1N4934-T
DIODE GEN PURP 100V 1A DO41 |
Diodes Incorporated | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 150°C | ✓ |
|
1N4934-TP
DIODE GPP FAST 1A DO-41 |
Micro Commercial Components (MCC) | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | — | — | 15pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | ✓ |
|
1N4934BULK
FR 1A, CASE TYPE: DO-41 |
EIC Semiconductor, Inc. | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | 15pF @ 4V, 1MHz | 150 ns | -65°C ~ 150°C | ✓ |
|
1N4934E-E3/54
DIODE GEN PURP 100V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | 12pF @ 4V, 1MHz | 200 ns | -50°C ~ 150°C | ✓ |
|
1N4934G
DIODE GEN PURP 100V 1A DO41 |
onsemi | Active | Through Hole | DO-204AL, DO-41, Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | — | 300 ns | -65°C ~ 150°C | — |
|
1N4934G
DIODE GEN PURP 100V 1A DO41 |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A (DC) | 1.2 V @ 1 A | 5 µA @ 100 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4934G A0G
DIODE GEN PURP 100V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4934G B0G
DIODE GEN PURP 100V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4934G R0G
DIODE GEN PURP 100V 1A DO204AL |
Taiwan Semiconductor | Market | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4934G R1G
DIODE GEN PURP 100V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 100 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |