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Komponentler
10,000 sonuç · Sayfa 64/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4937-T
DIODE GEN PURP 600V 1A DO41 |
Diodes Incorporated | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 150°C | ✓ |
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1N4937-TP
DIODE GEN PURP 600V 1A DO41 |
Micro Commercial Components (MCC) | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.3 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | ✓ |
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1N4937E-E3/53
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 12pF @ 4V, 1MHz | 200 ns | — | ✓ |
|
1N4937E-E3/54
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 12pF @ 4V, 1MHz | 200 ns | -50°C ~ 150°C | ✓ |
|
1N4937G
DIODE GEN PURP 600V 1A DO41 |
onsemi | Active | Through Hole | DO-204AL, DO-41, Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | — | 300 ns | -65°C ~ 150°C | ✓ |
|
1N4937G A0G
DIODE GEN PURP 600V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4937G B0G
DIODE GEN PURP 600V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4937G R0G
DIODE GEN PURP 600V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4937G R1G
DIODE GEN PURP 600V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4937G-D1-3000
DIODE GEN PURP 600V 1A DO41 |
YANGJIE | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 2.5 µA @ 600 V | 10pF @ 4V, 1MHz | 150 ns | -55°C ~ 150°C | — |
|
1N4937G-T
DIODE GEN PURP 600V 1A DO41 |
Diodes Incorporated | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | — | 200 ns | -65°C ~ 150°C | ✓ |
|
1N4937GHA0G
DIODE GEN PURP 600V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4937GHB0G
DIODE GEN PURP 600V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4937GHR0G
DIODE GEN PURP 600V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4937GHR1G
DIODE GEN PURP 600V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 10pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | — |
|
1N4937GL-T
DIODE GEN PURP 600V 1A DO41 |
Diodes Incorporated | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | — | 200 ns | -65°C ~ 150°C | ✓ |
|
1N4937GP
DIODE GEN PURP 600V 1A DO41 |
onsemi | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 12pF @ 4V, 1MHz | 150 ns | -50°C ~ 150°C | ✓ |
|
1N4937GP-AP
DIODE GPP FAST 1A DO-41 |
Micro Commercial Components (MCC) | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | — | — | 15pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | ✓ |
|
1N4937GP-E3/54
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 175°C | — |
|
1N4937GP-E3/73
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 175°C | ✓ |
|
1N4937GP-M3/54
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 175°C | ✓ |
|
1N4937GP-M3/73
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 175°C | ✓ |
|
1N4937GP-TP
DIODE GPP FAST 1A DO-41 |
Micro Commercial Components (MCC) | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | — | — | 15pF @ 4V, 1MHz | 200 ns | -55°C ~ 150°C | ✓ |
|
1N4937GPE-E3/54
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 175°C | ✓ |
|
1N4937GPE-E3/91
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 175°C | ✓ |
|
1N4937GPEHE3/54
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 175°C | ✓ |
|
1N4937GPEHE3/91
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 12pF @ 4V, 1MHz | 200 ns | -50°C ~ 150°C | ✓ |
|
1N4937GPHE3/54
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 175°C | ✓ |
|
1N4937GPHE3/73
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 175°C | — |
|
1N4937GPHM3/54
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 12pF @ 4V, 1MHz | 200 ns | -50°C ~ 150°C | ✓ |
|
1N4937L
DIODE GEN PURP 600V 1A DO41 |
Diodes Incorporated | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 150°C | — |
|
1N4937L-T
DIODE GEN PURP 600V 1A DO41 |
Diodes Incorporated | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 200 ns | -65°C ~ 150°C | ✓ |
|
1N4937RL
DIODE GEN PURP 600V 1A DO41 |
onsemi | Obsolete | Through Hole | DO-204AL, DO-41, Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | — | 300 ns | -65°C ~ 150°C | — |
|
1N4937RLG
DIODE GEN PURP 600V 1A DO41 |
onsemi | Active | Through Hole | DO-204AL, DO-41, Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | — | 300 ns | -65°C ~ 150°C | ✓ |
|
1N4937T/R
FR 1A, CASE TYPE: DO-41 |
EIC Semiconductor, Inc. | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 150 ns | -65°C ~ 150°C | — |
|
1N4938
D-200PRV .5A |
NTE Electronics, Inc. | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 500mA | 1 V @ 100 mA | 100 nA @ 75 V | 5pF @ 0V, 1MHz | 50 ns | 175°C (Max) | — |
|
1N4938
RECTIFIER DIODE |
Rochester Electronics | Obsolete | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 500mA | 1 V @ 100 mA | 100 nA @ 75 V | 5pF @ 0V, 1MHz | 50 ns | 175°C (Max) | — |
|
1N4938
DIODE GEN PURP 200V 500MA DO35 |
onsemi | Obsolete | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 500mA | 1 V @ 100 mA | 100 nA @ 75 V | 5pF @ 0V, 1MHz | 50 ns | 175°C (Max) | ✓ |
|
1N4938-1
DIODE GEN PURP 175V 100MA DO35 |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 175 V | Standard | 100mA | 1 V @ 100 mA | 100 nA @ 175 V | — | 50 ns | -65°C ~ 175°C | — |
|
1N4938-1/TR
SIGNAL/COMPUTER DIODE |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 175 V | Standard | 100mA | 1 V @ 100 mA | 100 nA @ 175 V | — | 50 ns | -65°C ~ 175°C | — |
|
1N4938_T50R
DIODE GEN PURP 200V 500MA DO35 |
onsemi | Obsolete | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 500mA | 1 V @ 100 mA | 100 nA @ 75 V | 5pF @ 0V, 1MHz | 50 ns | 175°C (Max) | ✓ |
|
1N4938TR
RECTIFIER DIODE |
Rochester Electronics | Obsolete | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 500mA | 1 V @ 100 mA | 100 nA @ 75 V | 5pF @ 0V, 1MHz | 50 ns | 175°C (Max) | — |
|
1N4938TR
DIODE GEN PURP 200V 500MA DO35 |
onsemi | Obsolete | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 500mA | 1 V @ 100 mA | 100 nA @ 75 V | 5pF @ 0V, 1MHz | 50 ns | 175°C (Max) | ✓ |
|
1N4938UR-1
DIODE GEN PURP 175V 100MA DO213 |
Microchip Technology | Active | Surface Mount | DO-213AA | DO-213AA | Small Signal =< 200mA (Io), Any Speed | 175 V | Standard | 100mA | 1 V @ 100 mA | 100 nA @ 175 V | — | 50 ns | -65°C ~ 175°C | — |
|
1N4938UR-1/TR
SIGNAL/COMPUTER DIODE |
Microchip Technology | Active | Surface Mount | DO-213AA | DO-213AA | Small Signal =< 200mA (Io), Any Speed | 175 V | Standard | 100mA | 1 V @ 100 mA | 100 nA @ 175 V | — | 50 ns | -65°C ~ 175°C | — |
|
1N4942
DIODE GEN PURP 200V 1A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.3 V @ 1 A | 1 µA @ 200 V | 45pF @ 12V, 1MHz | 150 ns | -65°C ~ 175°C | — |
|
1N4942-AP
DIODE GPP FAST 1A DO-41 |
Micro Commercial Components (MCC) | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | — | — | 15pF @ 4V, 1MHz | 150 ns | -55°C ~ 150°C | ✓ |
|
1N4942-TP
DIODE GPP FAST 1A DO-41 |
Micro Commercial Components (MCC) | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | — | — | 15pF @ 4V, 1MHz | 150 ns | -55°C ~ 150°C | ✓ |
|
1N4942/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | — | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.3 V @ 1 A | 1 µA @ 200 V | 45pF @ 12V, 1MHz | 150 ns | -65°C ~ 175°C | — |
|
1N4942C.TR
DIODE GEN PURP 200V 1A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.2 V @ 1 A | 500 nA @ 200 V | 27pF @ 5V, 1MHz | 150 ns | — | — |