Diyotlar - Doğrultucular - Tekil
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Komponentler
10,000 sonuç · Sayfa 130/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APD340VPTR-E1
DIODE SCHOTTKY 40V 3A DO27 |
Diodes Incorporated | Obsolete | Through Hole | DO-201AA, DO-27, Axial | DO-201 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | Schottky | 3A | 500 mV @ 3 A | 500 µA @ 40 V | — | — | -50°C ~ 125°C | ✓ |
|
APD340VPTR-G1
DIODE SCHOTTKY 40V 3A DO27 |
Diodes Incorporated | Obsolete | Through Hole | DO-201AA, DO-27, Axial | DO-201 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | Schottky | 3A | 500 mV @ 3 A | 500 µA @ 40 V | — | — | -50°C ~ 125°C | ✓ |
|
APD340VRTR-G1
DIODE SCHOTTKY 40V 3A DO214AC |
Diodes Incorporated | Obsolete | Surface Mount | DO-214AC, SMA | DO-214AC | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | Schottky | 3A | 500 mV @ 3 A | 500 µA @ 40 V | — | — | -50°C ~ 125°C | ✓ |
|
APD360VP-E1
DIODE SCHOTTKY |
Diodes Incorporated | Obsolete | Through Hole | DO-201AA, DO-27, Axial | DO-27 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | Schottky | 3A | 680 mV @ 3 A | 500 µA @ 60 V | — | — | -65°C ~ 125°C | ✓ |
|
APD360VP-G1
DIODE SCHOTTKY 60V 3A DO27 |
Diodes Incorporated | Obsolete | Through Hole | DO-201AA, DO-27, Axial | DO-201 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | Schottky | 3A | 680 mV @ 3 A | 500 µA @ 60 V | — | — | -50°C ~ 125°C | ✓ |
|
APD360VPL-E1
DIODE SCHOTTKY 60V 3A DO27 |
Diodes Incorporated | Obsolete | Through Hole | DO-201AA, DO-27, Axial | DO-201 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | Schottky | 3A | 680 mV @ 3 A | 500 µA @ 60 V | — | — | -50°C ~ 125°C | ✓ |
|
APD360VPL-G1
DIODE SCHOTTKY 60V 3A DO27 |
Diodes Incorporated | Obsolete | Through Hole | DO-201AA, DO-27, Axial | DO-201 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | Schottky | 3A | 680 mV @ 3 A | 500 µA @ 60 V | — | — | -50°C ~ 125°C | ✓ |
|
APD360VPTR-E1
DIODE SCHOTTKY |
Diodes Incorporated | Obsolete | Through Hole | DO-201AA, DO-27, Axial | DO-27 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | Schottky | 3A | 680 mV @ 3 A | 500 µA @ 60 V | — | — | -65°C ~ 125°C | ✓ |
|
APD360VPTR-G1
DIODE SCHOTTKY |
Diodes Incorporated | Obsolete | Through Hole | DO-201AA, DO-27, Axial | DO-27 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | Schottky | 3A | 680 mV @ 3 A | 500 µA @ 60 V | — | — | -65°C ~ 125°C | ✓ |
|
APD360VRTR-G1
DIODE SCHOTTKY |
Diodes Incorporated | Obsolete | Surface Mount | DO-214AC, SMA | DO-214AC | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | Schottky | 3A | 680 mV @ 3 A | 500 µA @ 60 V | — | — | -65°C ~ 125°C | ✓ |
|
APT100D60B2G
FRED D 600 V 100 A TO-247 MAX |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 | — | 600 V | Standard | 100A | — | — | — | — | — | — |
|
APT100D60BG
FRED D 1000 V 60 A TO-247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 100A | 2 V @ 100 A | 250 µA @ 600 V | — | — | -55°C ~ 150°C | — |
|
APT100DL60BG
DIODE GEN PURP 600V 100A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 100A | 1.6 V @ 100 A | — | — | — | -55°C ~ 175°C | — |
|
APT100S20BG
DIODE SCHOTTKY 200V 120A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Schottky | 120A | 950 mV @ 100 A | 2 mA @ 200 V | — | 70 ns | -55°C ~ 150°C | — |
|
APT10SCD120B
DIODE SCHOTTKY 1.2KV 36A TO247 |
Microchip Technology | Obsolete | Through Hole | TO-247-2 | TO-247 | No Recovery Time > 500mA (Io) | 1200 V | Silicon Carbide Schottky | 36A (DC) | 1.8 V @ 10 A | 200 µA @ 1200 V | 600pF @ 0V, 1MHz | 0 ns | -55°C ~ 150°C | — |
|
APT10SCD120K
DIODE SCHOTTKY 1.2KV 10A TO220 |
Microchip Technology | Obsolete | Through Hole | TO-220-2 | TO-220 [K] | No Recovery Time > 500mA (Io) | 1200 V | Silicon Carbide Schottky | 10A | 1.5 V @ 10 A | — | — | 0 ns | — | — |
|
APT10SCD65K
DIODE SILICON 650V 17A TO220 |
Microchip Technology | Obsolete | Through Hole | TO-220-2 | TO-220 [K] | No Recovery Time > 500mA (Io) | 650 V | Silicon Carbide Schottky | 17A | 1.8 V @ 10 A | 200 µA @ 650 V | 300pF @ 1V, 1MHz | 0 ns | -55°C ~ 150°C | — |
|
APT10SCE120B
DIODE SCHOTTKY 1200V 10A TO247 |
Microchip Technology | Obsolete | Through Hole | TO-247-2 | TO-247 | No Recovery Time > 500mA (Io) | 1200 V | Silicon Carbide Schottky | 43A (DC) | 1.8 V @ 10 A | 200 µA @ 1200 V | 630pF @ 1V, 1MHz | 0 ns | -55°C ~ 175°C | ✓ |
|
APT10SCE170B
DIODE SCHOTTKY 1700V 10A TO247 |
Microchip Technology | Obsolete | Through Hole | TO-247-2 | TO-247 | No Recovery Time > 500mA (Io) | 1700 V | Silicon Carbide Schottky | 23A (DC) | 1.8 V @ 10 A | 200 µA @ 1700 V | 1120pF @ 0V, 1MHz | 0 ns | -55°C ~ 175°C | ✓ |
|
APT10SCE65B
DIODE SCHOTTKY 650V 10A TO247 |
Microchip Technology | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
APT10SCE65K
DIODE SCHOTTKY 650V 10A TO220 |
Microchip Technology | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
APT15D100BG
DIODE GEN PURP 1KV 15A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 15A | 2.3 V @ 15 A | 250 µA @ 1000 V | — | 260 ns | -55°C ~ 175°C | — |
|
APT15D100KG
DIODE GEN PURP 1KV 15A TO220 |
Microchip Technology | Active | Through Hole | TO-220-3 | TO-220 [K] | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 15A | 2.3 V @ 15 A | 250 µA @ 1000 V | — | 260 ns | -55°C ~ 175°C | — |
|
APT15D120BG
DIODE GEN PURP 1.2KV 15A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 1200 V | Standard | 15A | 2.5 V @ 15 A | 250 µA @ 1200 V | — | 260 ns | -55°C ~ 150°C | — |
|
APT15D120KG
DIODE GEN PURP 1.2KV 15A TO220 |
Microchip Technology | Active | Through Hole | TO-220-3 | TO-220 [K] | Fast Recovery =< 500ns, > 200mA (Io) | 1200 V | Standard | 15A | 2.5 V @ 15 A | 250 µA @ 1200 V | — | 260 ns | -55°C ~ 175°C | — |
|
APT15D30KG
DIODE GEN PURP 300V 15A TO220-2 |
Microchip Technology | Obsolete | Through Hole | TO-220-2 | TO-220 [K] | Fast Recovery =< 500ns, > 200mA (Io) | 300 V | Standard | 15A | 1.4 V @ 15 A | 150 µA @ 300 V | — | 32 ns | -55°C ~ 150°C | — |
|
APT15D40KG
DIODE GEN PURP 400V 15A TO220-2 |
Microchip Technology | Obsolete | Through Hole | TO-220-2 | TO-220 [K] | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 15A | 1.5 V @ 15 A | 150 µA @ 400 V | — | 35 ns | -55°C ~ 175°C | — |
|
APT15D60BG
DIODE GEN PURP 600V 15A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 15A | 1.8 V @ 15 A | 150 µA @ 600 V | — | 80 ns | -55°C ~ 175°C | — |
|
APT15D60KG
DIODE GEN PURP 600V 15A TO220 |
Microchip Technology | Active | Through Hole | TO-220-2 | TO-220 [K] | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 15A | 1.8 V @ 15 A | 250 µA @ 600 V | — | 80 ns | -55°C ~ 175°C | — |
|
APT15DQ100BG
DIODE GEN PURP 1KV 15A TO247 |
Microchip Technology | Active | Through Hole | TO-247-3 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 15A | 3 V @ 15 A | 100 µA @ 1000 V | — | 235 ns | -55°C ~ 175°C | — |
|
APT15DQ100KG
DIODE GEN PURP 1KV 15A TO220 |
Microchip Technology | Active | Through Hole | TO-220-2 | TO-220 [K] | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 15A | 3 V @ 15 A | 100 µA @ 1000 V | — | 235 ns | -55°C ~ 175°C | — |
|
APT15DQ120BG
DIODE GEN PURP 1.2KV 15A TO247 |
Microchip Technology | Active | Through Hole | TO-247-3 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 1200 V | Standard | 15A | 3.3 V @ 15 A | 100 µA @ 1200 V | — | 240 ns | -55°C ~ 175°C | — |
|
APT15DQ120BHBG
FRED DQ 1200 V 15 A TO-247 |
Microchip Technology | Active | Through Hole | TO-247-3 | TO-247-3 | Fast Recovery =< 500ns, > 200mA (Io) | 1200 V | Standard | 15A | 3.5 V @ 15 A | 100 µA @ 1200 V | — | 240 ns | -55°C ~ 175°C | — |
|
APT15DQ120KG
DIODE GEN PURP 1.2KV 15A TO220 |
Microchip Technology | Active | Through Hole | TO-220-2 | TO-220 [K] | Fast Recovery =< 500ns, > 200mA (Io) | 1200 V | Standard | 15A | 3.3 V @ 15 A | 100 µA @ 1200 V | — | 240 ns | -55°C ~ 175°C | — |
|
APT15DQ60BG
DIODE GEN PURP 600V 15A TO247 |
Microchip Technology | Active | Through Hole | TO-247-3 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 15A | 2.4 V @ 15 A | 25 µA @ 600 V | — | 19 ns | -55°C ~ 175°C | — |
|
APT15DQ60KG
DIODE GEN PURP 600V 15A TO220 |
Microchip Technology | Active | Through Hole | TO-220-2 | TO-220 [K] | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 15A | 2.4 V @ 15 A | 25 µA @ 600 V | — | 19 ns | -55°C ~ 175°C | — |
|
APT15DQ60SG
FRED DQ 600 V 15 A TO-268 |
Microchip Technology | Active | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3PAK | Fast Recovery =< 500ns, > 200mA (Io) | — | Standard | 15A | 2.4 V @ 15 A | 25 µA @ 600 V | — | 21 ns | -55°C ~ 175°C | — |
|
APT15S20KG
DIODE SCHOTTKY 200V 25A TO220 |
Microchip Technology | Obsolete | Through Hole | TO-220-2 | TO-220 [K] | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Schottky | 25A | 830 mV @ 15 A | 250 µA @ 200 V | — | 80 ns | -55°C ~ 150°C | — |
|
APT20SCD120B
DIODE SCHOTTKY 1.2KV 68A |
Microchip Technology | Obsolete | — | — | — | No Recovery Time > 500mA (Io) | 1200 V | Silicon Carbide Schottky | 68A (DC) | 1.8 V @ 20 A | 400 µA @ 1200 V | 1135pF @ 0V, 1MHz | 0 ns | -55°C ~ 150°C | ✓ |
|
APT20SCD120S
DIODE SCHOTTKY 1.2KV 68A D3PAK |
Microchip Technology | Obsolete | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3PAK | No Recovery Time > 500mA (Io) | 1200 V | Silicon Carbide Schottky | 68A (DC) | 1.8 V @ 20 A | 400 µA @ 1200 V | 1135pF @ 0V, 1MHz | 0 ns | -55°C ~ 150°C | ✓ |
|
APT20SCD65K
DIODE SILICON 650V 32A TO220 |
Microchip Technology | Obsolete | Through Hole | TO-220-2 | TO-220 [K] | No Recovery Time > 500mA (Io) | 650 V | Silicon Carbide Schottky | 32A | 1.8 V @ 20 A | 400 µA @ 650 V | 680pF @ 100mV, 1MHz | 0 ns | -55°C ~ 150°C | — |
|
APT20SCD65S
DIODE SCHOTTKY 650V 20A D3 |
Microchip Technology | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
APT20SCE120B
DIODE SCHOTTKY 1200V 20A TO247 |
Microchip Technology | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
APT20SCE170B
DIODE SCHOTTKY 1700V 20A TO247 |
Microchip Technology | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
APT20SCE65B
DIODE SCHOTTKY 650V 20A TO247 |
Microchip Technology | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
APT30D100BG
DIODE GEN PURP 1KV 30A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 30A | 2.3 V @ 30 A | 250 µA @ 1000 V | — | 290 ns | -55°C ~ 175°C | — |
|
APT30D120BG
DIODE GEN PURP 1.2KV 30A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 | Fast Recovery =< 500ns, > 200mA (Io) | 1200 V | Standard | 30A | 2.5 V @ 30 A | 250 µA @ 1200 V | — | 370 ns | -55°C ~ 175°C | — |
|
APT30D120SG
DIODE ULT FAST 30A 1200V D3PAK |
Microchip Technology | Active | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3 [S] | Fast Recovery =< 500ns, > 200mA (Io) | 1200 V | Standard | 30A | 2.5 V @ 30 A | 250 µA @ 1200 V | — | 370 ns | -55°C ~ 175°C | — |
|
APT30D20BG
DIODE GEN PURP 200V 30A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 30A | 1.3 V @ 30 A | 250 µA @ 200 V | — | 24 ns | -55°C ~ 175°C | — |
|
APT30D20SG
DIODE ULT FAST 30A 200V D3PAK |
Microchip Technology | Active | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3 [S] | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 30A | 1.3 V @ 30 A | 250 µA @ 200 V | — | 24 ns | -55°C ~ 175°C | — |