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Komponentler
10,000 sonuç · Sayfa 131/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT30D30BG
DIODE GEN PURP 300V 30A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 300 V | Standard | 30A | 1.4 V @ 30 A | 250 µA @ 300 V | — | 25 ns | -55°C ~ 175°C | — |
|
APT30D40BG
DIODE GEN PURP 400V 30A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 30A | 1.5 V @ 30 A | 250 µA @ 400 V | — | 32 ns | -55°C ~ 175°C | — |
|
APT30D40SG
DIODE ULT FAST 30A 400V D3PAK |
Microchip Technology | Active | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3 [S] | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 30A | 1.5 V @ 30 A | 250 µA @ 400 V | — | 32 ns | -55°C ~ 175°C | — |
|
APT30D60BG
DIODE GEN PURP 600V 30A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 30A | 1.8 V @ 30 A | 250 µA @ 600 V | — | 85 ns | -55°C ~ 175°C | ✓ |
|
APT30D60SG
DIODE ULT FAST 30A 600V D3PAK |
Microchip Technology | Active | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3 [S] | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 30A | 1.8 V @ 30 A | 250 µA @ 600 V | — | 85 ns | -55°C ~ 175°C | ✓ |
|
APT30D60SG/TR
FRED D 600 V 30 A TO-268 TAPE & |
Microchip Technology | Active | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3PAK | — | 600 V | Standard | 30A | — | — | — | — | — | ✓ |
|
APT30DQ100BG
DIODE GEN PURP 1KV 30A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 30A | 3 V @ 30 A | 100 µA @ 1000 V | — | 295 ns | -55°C ~ 175°C | — |
|
APT30DQ100KG
DIODE GEN PURP 1KV 30A TO220 |
Microchip Technology | Active | Through Hole | TO-220-2 | TO-220 [K] | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 30A | 3 V @ 30 A | 100 µA @ 1000 V | — | 295 ns | -55°C ~ 175°C | — |
|
APT30DQ120BG
DIODE GEN PURP 1.2KV 30A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 1200 V | Standard | 30A | 3.3 V @ 30 A | 100 µA @ 1200 V | — | 320 ns | -55°C ~ 175°C | — |
|
APT30DQ120KG
DIODE GEN PURP 1.2KV 30A TO220 |
Microchip Technology | Active | Through Hole | TO-220-3 | TO-220 [K] | Fast Recovery =< 500ns, > 200mA (Io) | 1200 V | Standard | 30A | 3.3 V @ 30 A | 100 µA @ 1200 V | — | 320 ns | -55°C ~ 175°C | — |
|
APT30DQ60BG
DIODE GEN PURP 600V 30A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 30A | 2.4 V @ 30 A | 25 µA @ 600 V | — | 30 ns | -55°C ~ 175°C | — |
|
APT30DQ60KG
DIODE GEN PURP 600V 30A TO220 |
Microchip Technology | Active | Through Hole | TO-220-2 | TO-220 [K] | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 30A | 2.4 V @ 30 A | 25 µA @ 600 V | — | 30 ns | -55°C ~ 175°C | — |
|
APT30S20BG
DIODE SCHOTTKY 200V 45A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Schottky | 45A | 850 mV @ 30 A | 500 µA @ 200 V | — | 55 ns | -55°C ~ 150°C | — |
|
APT30S20SG
DIODE SCHOTTKY 200V 45A D3 |
Microchip Technology | Obsolete | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3 [S] | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Schottky | 45A | 850 mV @ 30 A | 500 µA @ 200 V | — | 55 ns | -55°C ~ 150°C | — |
|
APT30SCD120B
DIODE SCHOTTKY 1.2KV 99A |
Microchip Technology | Obsolete | Through Hole | TO-247-2 | TO-247 | No Recovery Time > 500mA (Io) | 1200 V | Silicon Carbide Schottky | 99A (DC) | 1.8 V @ 30 A | 600 µA @ 1200 V | 2100pF @ 0V, 1MHz | 0 ns | -55°C ~ 150°C | ✓ |
|
APT30SCD120S
DIODE SCHOTTKY 1.2KV 99A D3PAK |
Microchip Technology | Obsolete | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3PAK | No Recovery Time > 500mA (Io) | 1200 V | Silicon Carbide Schottky | 99A (DC) | 1.8 V @ 30 A | 600 µA @ 1200 V | 2100pF @ 0V, 1MHz | 0 ns | -55°C ~ 150°C | ✓ |
|
APT30SCD65B
DIODE SIC 650V 46A TO247 |
Microchip Technology | Obsolete | Through Hole | TO-247-2 | TO-247 | No Recovery Time > 500mA (Io) | 650 V | Silicon Carbide Schottky | 46A | 1.8 V @ 30 A | 600 µA @ 650 V | 945pF @ 1V, 1MHz | 0 ns | -55°C ~ 150°C | — |
|
APT40DQ100BG
DIODE GEN PURP 1KV 40A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 40A | 3 V @ 40 A | 100 µA @ 1000 V | — | 250 ns | -55°C ~ 175°C | ✓ |
|
APT40DQ120BG
DIODE GEN PURP 1.2KV 40A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 1200 V | Standard | 40A | 3.3 V @ 40 A | 100 µA @ 1200 V | — | 350 ns | -55°C ~ 175°C | — |
|
APT40DQ120SG
FRED DQ 1200 V 40 A TO-268 |
Microchip Technology | Active | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3PAK | Fast Recovery =< 500ns, > 200mA (Io) | 1200 V | Standard | 40A | 3.4 V @ 40 A | 100 µA @ 1200 V | — | 350 ns | -55°C ~ 175°C | — |
|
APT40DQ60BG
DIODE GEN PURP 600V 40A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 40A | 2.4 V @ 40 A | 25 µA @ 600 V | — | 25 ns | -55°C ~ 175°C | — |
|
APT50SCE120B
DIODE SCHOTTKY 1200V 50A TO247 |
Microchip Technology | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
APT50SCE65B
DIODE SCHOTTKY 650V 50A TO247 |
Microchip Technology | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
APT60D100BG
DIODE GEN PURP 1KV 60A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 60A | 2.5 V @ 60 A | 250 µA @ 1000 V | — | 280 ns | -55°C ~ 175°C | — |
|
APT60D100SG
DIODE GEN PURP 1KV 60A D3 |
Microchip Technology | Active | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3 [S] | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 60A | 2.5 V @ 60 A | 250 µA @ 1000 V | — | 280 ns | -55°C ~ 175°C | — |
|
APT60D100SG/TR
FRED D 1000 V 60 A TO-268 TAPE & |
Microchip Technology | Active | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3PAK | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 60A | 2.5 V @ 60 A | 250 µA @ 1 kV | — | 280 ns | -55°C ~ 175°C | — |
|
APT60D120BG
DIODE GEN PURP 1.2KV 60A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 1200 V | Standard | 60A | 2.5 V @ 60 A | 250 µA @ 1200 V | — | 400 ns | -55°C ~ 175°C | — |
|
APT60D120SG
DIODE GEN PURP 1.2KV 60A D3 |
Microchip Technology | Active | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3 [S] | Fast Recovery =< 500ns, > 200mA (Io) | 1200 V | Standard | 60A | 2.5 V @ 60 A | 250 µA @ 1200 V | — | 400 ns | -55°C ~ 175°C | — |
|
APT60D20BG
DIODE GEN PURP 200V 60A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 60A | 1.3 V @ 60 A | 250 µA @ 200 V | — | 31 ns | -55°C ~ 175°C | — |
|
APT60D30BG
DIODE GEN PURP 300V 60A TO247 |
Microchip Technology | Obsolete | Through Hole | TO-247-2 | TO-247 | Fast Recovery =< 500ns, > 200mA (Io) | 300 V | Standard | 60A | 1.4 V @ 60 A | 250 µA @ 300 V | — | 38 ns | -55°C ~ 175°C | — |
|
APT60D40BG
DIODE GEN PURP 400V 60A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 60A | 1.5 V @ 60 A | 250 µA @ 400 V | — | 37 ns | -55°C ~ 175°C | — |
|
APT60D40SG
DIODE ULT FAST 60A 400V D3PAK |
Microchip Technology | Active | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3 [S] | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 60A | 1.5 V @ 60 A | 250 µA @ 400 V | — | 37 ns | -55°C ~ 175°C | — |
|
APT60D60BG
DIODE GEN PURP 600V 60A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 60A | 1.8 V @ 60 A | 250 µA @ 600 V | — | 130 ns | -55°C ~ 175°C | — |
|
APT60D60SG
FRED D 600 V 60 A TO-268 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 | Fast Recovery =< 500ns, > 200mA (Io) | — | Standard | 60A | 1.8 V @ 60 A | 250 µA @ 600 V | — | 130 ns | -55°C ~ 175°C | ✓ |
|
APT60DQ100BG
DIODE GEN PURP 1KV 60A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 60A | 3 V @ 60 A | 100 µA @ 1000 V | — | 255 ns | -55°C ~ 175°C | — |
|
APT60DQ120BG
DIODE GEN PURP 1.2KV 60A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 1200 V | Standard | 60A | 3.3 V @ 60 A | 100 µA @ 1200 V | — | 320 ns | -55°C ~ 175°C | — |
|
APT60DQ120SG
FRED DQ 1200 V 60 A TO-268 |
Microchip Technology | Active | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3PAK | Fast Recovery =< 500ns, > 200mA (Io) | — | Standard | 60A | 3.3 V @ 60 A | 100 µA @ 1200 V | — | 320 ns | -55°C ~ 175°C | — |
|
APT60DQ60BG
DIODE GEN PURP 600V 60A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 60A | 2.4 V @ 60 A | 25 µA @ 600 V | — | 35 ns | -55°C ~ 175°C | — |
|
APT60DQ60SG
FRED DQ 600 V 60 A TO-268 |
Microchip Technology | Active | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3PAK | Fast Recovery =< 500ns, > 200mA (Io) | — | Standard | 60A | 2.4 V @ 60 A | 25 µA @ 600 V | — | 35 ns | -55°C ~ 175°C | — |
|
APT60S20BG
DIODE SCHOTTKY 200V 75A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Schottky | 75A | 900 mV @ 60 A | 1 mA @ 200 V | — | 55 ns | -55°C ~ 150°C | — |
|
APT60S20SG
DIODE SCHOTTKY 200V 75A D3 |
Microchip Technology | Active | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3 [S] | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Schottky | 75A | 900 mV @ 60 A | 1 mA @ 200 V | — | 55 ns | -55°C ~ 150°C | — |
|
APT60S20SG/TR
DIODE SCHOTTKY 200V 75A D3PAK |
Microchip Technology | Active | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3PAK | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Schottky | 75A | 900 mV @ 60 A | 1 mA @ 200 V | — | 55 ns | -55°C ~ 150°C | — |
|
APT75DQ100BG
DIODE GEN PURP 1KV 75A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 75A | 3 V @ 75 A | 100 µA @ 1000 V | — | 250 ns | -55°C ~ 175°C | ✓ |
|
APT75DQ120BG
DIODE GEN PURP 1.2KV 75A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 1200 V | Standard | 75A | 3.1 V @ 75 A | 100 µA @ 1200 V | — | 325 ns | -55°C ~ 175°C | — |
|
APT75DQ120SG
FRED DQ 1200 V 75 A TO-268 |
Microchip Technology | Active | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3PAK | Fast Recovery =< 500ns, > 200mA (Io) | — | Standard | 75A | 3.3 V @ 75 A | 100 µA @ 1200 V | — | 325 ns | -55°C ~ 175°C | — |
|
APT75DQ60BG
DIODE GEN PURP 600V 75A TO247 |
Microchip Technology | Active | Through Hole | TO-247-2 | TO-247 [B] | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 75A | 2.5 V @ 75 A | 25 µA @ 600 V | — | 31 ns | -55°C ~ 175°C | — |
|
APT75DQ60SG
FRED DQ 600 V 75 A TO-268 |
Microchip Technology | Active | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3PAK | Fast Recovery =< 500ns, > 200mA (Io) | — | Standard | 75A | 2.5 V @ 75 A | 25 µA @ 600 V | — | 31 ns | -55°C ~ 175°C | — |
|
APT8DQ60KG
DIODE ULT FAST 600V 8A TO220 |
Microchip Technology | Active | Through Hole | TO-220-3 | TO-220 [K] | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 8A | 2.4 V @ 8 A | 25 µA @ 600 V | — | 19 ns | -55°C ~ 175°C | — |
|
APTDF400U120G
DIODE GEN PURP 1.2KV 450A LP4 |
Microchip Technology | Active | Chassis Mount | LP4 | LP4 | Fast Recovery =< 500ns, > 200mA (Io) | 1200 V | Standard | 450A | 2.5 V @ 500 A | 2.5 mA @ 1200 V | — | 110 ns | — | — |
|
APTDF430U100G
DIODE GEN PURP 1KV 500A LP4 |
Microchip Technology | Active | Chassis Mount | LP4 | LP4 | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 500A | 2.3 V @ 500 A | 2.5 mA @ 1000 V | — | 120 ns | — | — |