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Komponentler
10,000 sonuç · Sayfa 162/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Diode Configuration | Current - Average Rectified (Io) (per Diode) | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MUR1040CD-F1-0000HF
FAST DIODE 400V 10A TO-252 |
YANGJIE | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 1.25 V @ 5 A | 5 µA @ 400 V | 1 Pair Common Cathode | 10A | 35 ns | -55°C ~ 150°C | — |
|
MUR1040CT-B1-0000HF
FAST DIODE 400V 10A TO-220AB |
YANGJIE | Active | Through Hole | TO-220-3 | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 1.25 V @ 5 A | 5 µA @ 400 V | 1 Pair Common Cathode | 10A | 35 ns | -55°C ~ 150°C | — |
|
MUR1040FCT-B1-0000HF
FAST DIODE 400V 10A ITO-220AB |
YANGJIE | Active | Through Hole | TO-220-3 Isolated Tab | ITO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 1.25 V @ 5 A | 5 µA @ 400 V | 1 Pair Common Cathode | 10A | 35 ns | -55°C ~ 150°C | — |
|
MUR1610CT
DIODE ARRAY GP 100V 8A TO220AB |
Rochester Electronics | Obsolete | Through Hole | TO-220-3 | TO-220-3 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 975 mV @ 8 A | 500 µA @ 100 V | 1 Pair Common Cathode | 8A | 30 ns | -65°C ~ 175°C | ✓ |
|
MUR1610CTG
DIODE ARRAY GP 100V 8A TO220AB |
Rochester Electronics | Obsolete | Through Hole | TO-220-3 | TO-220 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 975 mV @ 8 A | 5 µA @ 100 V | 1 Pair Common Cathode | 8A | 35 ns | -65°C ~ 175°C | ✓ |
|
MUR1615CT
DIODE ARRAY GP 150V 8A TO220AB |
Rochester Electronics | Obsolete | Through Hole | TO-220-3 | TO-220-3 | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 975 mV @ 8 A | 5 µA @ 150 V | 1 Pair Common Cathode | 8A | 35 ns | -65°C ~ 175°C | ✓ |
|
MUR1615CTG
DIODE ARRAY GP 150V 8A TO220AB |
onsemi | Obsolete | Through Hole | TO-220-3 | TO-220 | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | Standard | 975 mV @ 8 A | 5 µA @ 150 V | 1 Pair Common Cathode | 8A | 35 ns | -65°C ~ 175°C | ✓ |
|
MUR1620CT
DIODE ARRAY GP 200V 8A TO220AB |
onsemi | Obsolete | Through Hole | TO-220-3 | TO-220 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 975 mV @ 8 A | 5 µA @ 200 V | 1 Pair Common Cathode | 8A | 35 ns | -65°C ~ 175°C | ✓ |
|
MUR1620CT
DIODE ARRAY GP 200V 8A TO220AB |
Vishay | Obsolete | Through Hole | TO-220-3 | TO-220-3 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 950 mV @ 8 A | 5 µA @ 200 V | 1 Pair Common Cathode | 8A | 35 ns | -65°C ~ 175°C | ✓ |
|
MUR1620CT C0G
DIODE ARRAY GP 200V 16A TO220AB |
Taiwan Semiconductor | Market | Through Hole | TO-220-3 | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 975 mV @ 8 A | 5 µA @ 200 V | 1 Pair Common Cathode | 16A | 25 ns | -55°C ~ 175°C | — |
|
MUR1620CT-B1-0000HF
FAST DIODE 200V 16A TO-220AB |
YANGJIE | Active | Through Hole | TO-220-3 | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1 V @ 8 A | 5 µA @ 200 V | 1 Pair Common Cathode | 16A | 35 ns | -55°C ~ 150°C | — |
|
MUR1620CTG
DIODE ARRAY GP 200V 8A TO220AB |
onsemi | Active | Through Hole | TO-220-3 | TO-220 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 975 mV @ 8 A | 5 µA @ 200 V | 1 Pair Common Cathode | 8A | 35 ns | -65°C ~ 175°C | ✓ |
|
MUR1620CTH
DIODE GEN PURPOSE |
onsemi | Obsolete | Through Hole | TO-220-3 | TO-220 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 975 mV @ 8 A | 5 µA @ 200 V | 1 Pair Common Cathode | 8A | 35 ns | -65°C ~ 175°C | — |
|
MUR1620CTHC0G
DIODE ARRAY GP 200V 16A TO220AB |
Taiwan Semiconductor | Active | Through Hole | TO-220-3 | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 975 mV @ 8 A | 5 µA @ 200 V | 1 Pair Common Cathode | 16A | 25 ns | -55°C ~ 175°C | — |
|
MUR1620CTR
DIODE ARRAY GP 200V 8A TO220AB |
Rochester Electronics | Obsolete | Through Hole | TO-220-3 | TO-220 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1.2 V @ 8 A | 5 µA @ 200 V | 1 Pair Common Anode | 8A | 85 ns | -65°C ~ 175°C | ✓ |
|
MUR1620CTRG
DIODE ARRAY GP 200V 8A TO220AB |
onsemi | Active | Through Hole | TO-220-3 | TO-220 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1.2 V @ 8 A | 5 µA @ 200 V | 1 Pair Common Anode | 8A | 85 ns | -65°C ~ 175°C | ✓ |
|
MUR1620CTRH
DIODE GEN PURPOSE |
onsemi | Obsolete | Through Hole | TO-220-3 | TO-220 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1.2 V @ 8 A | 5 µA @ 200 V | 1 Pair Common Anode | 8A | 85 ns | -65°C ~ 175°C | — |
|
MUR1640CT
DIODE ARRAY GP 400V 8A TO220AB |
Rochester Electronics | Obsolete | Through Hole | TO-220-3 | TO-220 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 1.3 V @ 8 A | 10 µA @ 400 V | 1 Pair Common Cathode | 8A | 60 ns | -65°C ~ 175°C | ✓ |
|
MUR1640CT C0G
DIODE ARRAY GP 400V 16A TO220AB |
Taiwan Semiconductor | Market | Through Hole | TO-220-3 | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 1.3 V @ 8 A | 10 µA @ 400 V | 1 Pair Common Cathode | 16A | 50 ns | -55°C ~ 175°C | — |
|
MUR1640CTG
DIODE ARRAY GP 400V 8A TO220AB |
Rochester Electronics | Active | Through Hole | TO-220-3 | TO-220 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 1.3 V @ 8 A | 10 µA @ 400 V | 1 Pair Common Cathode | 8A | 60 ns | -65°C ~ 175°C | ✓ |
|
MUR1640CTH
DIODE GEN PURPOSE |
onsemi | Obsolete | Through Hole | TO-220-3 | TO-220 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 1.3 V @ 8 A | 10 µA @ 400 V | 1 Pair Common Cathode | 8A | 60 ns | -65°C ~ 175°C | — |
|
MUR1640CTHC0G
DIODE ARRAY GP 400V 16A TO220AB |
Taiwan Semiconductor | Active | Through Hole | TO-220-3 | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 1.3 V @ 8 A | 10 µA @ 400 V | 1 Pair Common Cathode | 16A | 50 ns | -55°C ~ 175°C | — |
|
MUR1640F-BP
DIODE FAST REC 16A ITO-220AC |
Micro Commercial Components (MCC) | Last Time Buy | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
MUR1640FCT-B1-0000HF
FAST DIODE 400V 16A ITO-220AB |
YANGJIE | Active | Through Hole | TO-220-3 Isolated Tab | ITO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 1.25 V @ 8 A | 5 µA @ 400 V | 1 Pair Common Cathode | 16A | 35 ns | -55°C ~ 150°C | — |
|
MUR1660CT
DIODE ARRAY GP 600V 8A TO220AB |
onsemi | Obsolete | Through Hole | TO-220-3 | TO-220 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1.5 V @ 8 A | 10 µA @ 600 V | 1 Pair Common Cathode | 8A | 60 ns | -65°C ~ 175°C | ✓ |
|
MUR1660CT C0G
DIODE ARRAY GP 600V 16A TO220AB |
Taiwan Semiconductor | Market | Through Hole | TO-220-3 | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1.5 V @ 8 A | 10 µA @ 600 V | 1 Pair Common Cathode | 16A | 50 ns | -55°C ~ 175°C | — |
|
MUR1660CT-B1-0000HF
FAST DIODE 600V 16A TO-220AB |
YANGJIE | Active | Through Hole | TO-220-3 | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1.6 V @ 8 A | 10 µA @ 600 V | 1 Pair Common Cathode | 16A | 35 ns | -55°C ~ 150°C | — |
|
MUR1660CTG
DIODE ARRAY GP 600V 8A TO220AB |
onsemi | Active | Through Hole | TO-220-3 | TO-220 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1.5 V @ 8 A | 10 µA @ 600 V | 1 Pair Common Cathode | 8A | 60 ns | -65°C ~ 175°C | ✓ |
|
MUR1660CTHC0G
DIODE ARRAY GP 600V 16A TO220AB |
Taiwan Semiconductor | Active | Through Hole | TO-220-3 | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1.5 V @ 8 A | 10 µA @ 600 V | 1 Pair Common Cathode | 16A | 50 ns | -55°C ~ 175°C | — |
|
MUR20005CT
DIODE MODULE 50V 100A 2TOWER |
GeneSiC Semiconductor | Obsolete | Chassis Mount | Twin Tower | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Schottky | 1.3 V @ 100 A | 25 µA @ 50 V | 1 Pair Common Cathode | 100A | 75 ns | -55°C ~ 150°C | ✓ |
|
MUR20005CTR
DIODE MODULE 50V 100A 2TOWER |
GeneSiC Semiconductor | Obsolete | Chassis Mount | Twin Tower | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Schottky | 1.3 V @ 100 A | 25 µA @ 50 V | 1 Pair Common Anode | 100A | 75 ns | -55°C ~ 150°C | ✓ |
|
MUR20010CT
DIODE MODULE 100V 100A 2TOWER |
GeneSiC Semiconductor | Active | Chassis Mount | Twin Tower | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Schottky | 1.3 V @ 100 A | 25 µA @ 50 V | 1 Pair Common Cathode | 100A | 75 ns | -55°C ~ 150°C | — |
|
MUR20010CTR
DIODE MODULE 100V 100A 2TOWER |
GeneSiC Semiconductor | Active | Chassis Mount | Twin Tower | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Schottky | 1.3 V @ 100 A | 25 µA @ 50 V | 1 Pair Common Anode | 100A | 75 ns | -55°C ~ 150°C | — |
|
MUR20020CT
DIODE MODULE 200V 100A 2TOWER |
GeneSiC Semiconductor | Active | Chassis Mount | Twin Tower | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Schottky | 1.3 V @ 100 A | 25 µA @ 50 V | 1 Pair Common Cathode | 100A | 75 ns | -55°C ~ 150°C | — |
|
MUR20020CTR
DIODE MODULE 200V 100A 2TOWER |
GeneSiC Semiconductor | Active | Chassis Mount | Twin Tower | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Schottky | 1.3 V @ 100 A | 25 µA @ 50 V | 1 Pair Common Anode | 100A | 75 ns | -55°C ~ 150°C | — |
|
MUR20040CT
DIODE MODULE 400V 100A 2TOWER |
GeneSiC Semiconductor | Active | Chassis Mount | Twin Tower | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Schottky | 1.3 V @ 50 A | 25 µA @ 50 V | 1 Pair Common Cathode | 100A | 90 ns | -55°C ~ 150°C | — |
|
MUR20040CTR
DIODE MODULE 400V 100A 2TOWER |
GeneSiC Semiconductor | Active | Chassis Mount | Twin Tower | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Schottky | 1.3 V @ 50 A | 25 µA @ 50 V | 1 Pair Common Anode | 100A | 90 ns | -55°C ~ 150°C | — |
|
MUR20060CT
DIODE MODULE 600V 100A 2TOWER |
GeneSiC Semiconductor | Active | Chassis Mount | Twin Tower | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Schottky | 1.7 V @ 50 A | 25 µA @ 50 V | 1 Pair Common Cathode | 100A | 110 ns | -55°C ~ 150°C | — |
|
MUR20060CTR
DIODE MODULE 600V 100A 2TOWER |
GeneSiC Semiconductor | Active | Chassis Mount | Twin Tower | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Schottky | 1.7 V @ 50 A | 25 µA @ 50 V | 1 Pair Common Anode | 100A | 110 ns | -55°C ~ 150°C | — |
|
MUR2020CT
DIODE ARRAY GP 200V 10A TO220AB |
Vishay | Obsolete | Through Hole | TO-220-3 | TO-220-3 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 850 mV @ 8 A | 15 µA @ 200 V | 1 Pair Common Cathode | 10A | 35 ns | -65°C ~ 175°C | ✓ |
|
MUR2040FCT-B1-0000HF
FAST DIODE 400V 20A ITO-220AB |
YANGJIE | Active | Through Hole | TO-220-3 Isolated Tab | ITO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 1.25 V @ 10 A | 5 µA @ 400 V | 1 Pair Common Cathode | 20A | 35 ns | -55°C ~ 150°C | — |
|
MUR2X030A02
DIODE GEN PURP 200V 30A SOT227 |
GeneSiC Semiconductor | Active | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1 V @ 30 A | 25 µA @ 200 V | 2 Independent | 30A | 60 ns | -55°C ~ 175°C | — |
|
MUR2X030A04
DIODE GEN PURP 400V 30A SOT227 |
GeneSiC Semiconductor | Active | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1.3 V @ 30 A | 25 µA @ 400 V | 2 Independent | 30A | — | -55°C ~ 175°C | — |
|
MUR2X030A06
DIODE GEN PURP 600V 30A SOT227 |
GeneSiC Semiconductor | Obsolete | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1.5 V @ 30 A | 25 µA @ 600 V | 2 Independent | 30A | 60 ns | -55°C ~ 175°C | ✓ |
|
MUR2X030A10
DIODE GEN PURP 1000V 30A SOT227 |
GeneSiC Semiconductor | Obsolete | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 2.35 V @ 30 A | 25 µA @ 1000 V | 2 Independent | 30A | 85 ns | -55°C ~ 175°C | ✓ |
|
MUR2X030A12
DIODE GEN PURP 1200V 30A SOT227 |
GeneSiC Semiconductor | Obsolete | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 1200 V | Standard | 2.35 V @ 30 A | 25 µA @ 1200 V | 2 Independent | 30A | 85 ns | -65°C ~ 175°C | ✓ |
|
MUR2X060A02
DIODE GEN PURP 200V 60A SOT227 |
GeneSiC Semiconductor | Active | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 1 V @ 60 A | 25 µA @ 200 V | 2 Independent | 60A | 75 ns | -55°C ~ 175°C | ✓ |
|
MUR2X060A04
DIODE GEN PURP 400V 60A SOT227 |
GeneSiC Semiconductor | Active | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 1.3 V @ 60 A | 25 µA @ 400 V | 2 Independent | 60A | 75 ns | -55°C ~ 175°C | ✓ |
|
MUR2X060A06
DIODE GEN PURP 600V 60A SOT227 |
GeneSiC Semiconductor | Active | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1.5 V @ 60 A | 25 µA @ 600 V | 2 Independent | 60A | 90 ns | -55°C ~ 175°C | ✓ |
|
MUR2X060A10
DIODE GEN PURP 1KV 60A SOT227 |
GeneSiC Semiconductor | Active | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 2.35 V @ 60 A | 25 µA @ 1000 V | 2 Independent | 60A | — | -55°C ~ 175°C | — |