Diyotlar - Doğrultucular - Tekil
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Komponentler
10,000 sonuç · Sayfa 41/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4003/54
DIODE GEN PURP 200V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 200 V | 15pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4003B-G
DIODE GEN PURP 200V 1A DO41 |
Comchip Technology | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 200 V | 15pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4003E-E3/53
DIODE GEN PURP 200V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 200 V | 15pF @ 4V, 1MHz | — | -50°C ~ 150°C | ✓ |
|
1N4003E-E3/54
DIODE GEN PURP 200V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 200 V | 15pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N4003E-E3/73
DIODE GEN PURP 200V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 200 V | 15pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N4003G
DIODE GEN PURP 200V 1A DO41 |
onsemi | Active | Through Hole | DO-204AL, DO-41, Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 200 V | — | — | -65°C ~ 175°C | — |
|
1N4003G
DIODE GEN PURP 200V 1A DO41 |
SMC Diode Solutions | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 200 V | 8pF @ 4V, 1MHz | — | -65°C ~ 175°C | — |
|
1N4003G
DIODE GEN PURP 1A 200V DO-41 |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A (DC) | 1 V @ 1 A | 5 µA @ 200 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4003G
DIODE GP GLASS 200V 1A DO-41 |
Rectron USA | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1 V @ 1 A | 200 nA @ 200 V | 15pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N4003G A0G
DIODE GEN PURP 200V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 200 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4003G B0G
DIODE GEN PURP 200V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 200 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4003G BK
DIODE GEN PURPOSE DO41 |
Central Semiconductor | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | — | — | — | — | — | — | — | — | — | ✓ |
|
1N4003G R0G
DIODE GEN PURP 200V 1A DO204AL |
Taiwan Semiconductor | Market | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 200 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4003G R1G
DIODE GEN PURP 200V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 200 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4003G-T
DIODE GEN PURP 200V 1A DO41 |
Diodes Incorporated | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 200 V | 8pF @ 4V, 1MHz | 2 µs | -65°C ~ 175°C | ✓ |
|
1N4003GA0
1A,200V,STD.GLASS PASSIVATED REC |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 200 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N4003GH
DIODE GEN PURP 1A 200V DO-41 |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A (DC) | 1 V @ 1 A | 5 µA @ 200 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4003GHA0G
DIODE GEN PURP 200V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 200 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4003GHB0G
DIODE GEN PURP 200V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 200 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4003GHR0G
DIODE GEN PURP 200V 1A DO204AL |
Taiwan Semiconductor | Market | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 200 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4003GHR1G
DIODE GEN PURP 200V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 200 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4003GL TR
DIODE GEN PURP 200V 1A DO41 |
Central Semiconductor | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 200 V | — | — | -65°C ~ 175°C | — |
|
1N4003GL-T
DIODE GEN PURP 200V 1A DO41 |
Diodes Incorporated | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 200 V | 8pF @ 4V, 1MHz | 2 µs | -65°C ~ 175°C | ✓ |
|
1N4003GP
DIODE GEN PURP 200V 1A DO41 |
onsemi | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 200 V | 15pF @ 4V, 1MHz | — | -55°C ~ 175°C | ✓ |
|
1N4003GP-E3/54
DIODE GEN PURP 200V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 200 V | 8pF @ 4V, 1MHz | 2 µs | -65°C ~ 175°C | — |
|
1N4003GP-E3/73
DIODE GEN PURP 200V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 200 V | 8pF @ 4V, 1MHz | 2 µs | -65°C ~ 175°C | ✓ |
|
1N4003GP-M3/54
DIODE GEN PURP 200V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 200 V | 15pF @ 4V, 1MHz | — | -50°C ~ 150°C | ✓ |
|
1N4003GP-M3/73
DIODE GEN PURP 200V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 200 V | 15pF @ 4V, 1MHz | — | -50°C ~ 150°C | ✓ |
|
1N4003GPE-E3/53
DIODE GEN PURP 200V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 200 V | 8pF @ 4V, 1MHz | 2 µs | -65°C ~ 175°C | ✓ |
|
1N4003GPE-E3/54
DIODE GEN PURP 200V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 200 V | 8pF @ 4V, 1MHz | 2 µs | -65°C ~ 175°C | ✓ |
|
1N4003GPE-M3/54
DIODE GEN PURPOSE DO-204AL |
Vishay | Obsolete | Through Hole | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N4003GPE-M3/73
DIODE GEN PURPOSE DO-204AL |
Vishay | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N4003GPEHE3/53
DIODE GEN PURP 200V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 200 V | 8pF @ 4V, 1MHz | 2 µs | -65°C ~ 175°C | ✓ |
|
1N4003GPEHE3/54
DIODE GEN PURP 200V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 200 V | 8pF @ 4V, 1MHz | 2 µs | -65°C ~ 175°C | — |
|
1N4003GPHE3/54
DIODE GEN PURP 200V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 200 V | 8pF @ 4V, 1MHz | 2 µs | -65°C ~ 175°C | — |
|
1N4003GPHE3/73
DIODE GEN PURP 200V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 200 V | 8pF @ 4V, 1MHz | 2 µs | -65°C ~ 175°C | — |
|
1N4003GPHM3/54
DIODE GEN PURP 200V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 200 V | 15pF @ 4V, 1MHz | — | -50°C ~ 150°C | ✓ |
|
1N4003GR0
1A,200V,STD.GLASS PASSIVATED REC |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 200 V | 10pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N4003L-T
DIODE GEN PURP 200V 1A DO41 |
Diodes Incorporated | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 200 V | — | — | -65°C ~ 150°C | ✓ |
|
1N4003RL
DIODE GEN PURP 200V 1A DO41 |
onsemi | Obsolete | Through Hole | DO-204AL, DO-41, Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 200 V | — | — | -65°C ~ 175°C | — |
|
1N4003RLG
DIODE GEN PURP 200V 1A DO41 |
onsemi | Active | Through Hole | DO-204AL, DO-41, Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 200 V | — | — | -65°C ~ 175°C | ✓ |
|
1N4003T-G
DIODE GEN PURP 200V 1A DO41 |
Comchip Technology | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 200 V | 15pF @ 4V, 1MHz | — | -55°C ~ 150°C | — |
|
1N4003TA
DIODE GEN PURP 200V 1A DO41 |
SMC Diode Solutions | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 200 V | 15pF @ 4V, 1MHz | — | -65°C ~ 125°C | — |
|
1N4003W
DIODE GEN 1A 200V SOD-123F |
Rectron USA | Active | Surface Mount | SOD-123F | SOD-123F | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 200 V | 8pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |
|
1N4004
R-SI 400V 1A |
NTE Electronics, Inc. | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 400 V | — | 2 µs | -55°C ~ 150°C | — |
|
1N4004
ST Rect, 400V, 1A |
DComponents | Active | Through Hole | DO-204AC, DO-41, Axial | DO-41/DO-204AC | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 400 V | — | 1.5 µs | -50°C ~ 175°C | — |
|
1N4004
DIODE,400V,1A,DO-41,STD. |
Galco Industrial Electronics | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1 V @ 1 A | 5 µA @ 400 V | 15pF @ 4V, 1MHz | — | -65°C ~ 125°C | — |
|
1N4004
DIODE GEN PURP 400V 1A DO41 |
Micro Commercial Components (MCC) | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.1 V @ 1 A | 5 µA @ 400 V | — | 2 µs | -55°C ~ 150°C | — |
|
1N4004
DIODE GEN PURP 400V 1A DO41 |
onsemi | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.1 V @ 1 A | 10 µA @ 400 V | 15pF @ 4V, 1MHz | — | -55°C ~ 175°C | ✓ |
|
1N4004
DIODE GEN PURP 1000V 1A DO-41 |
Rectron USA | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1 V @ 1 A | 200 nA @ 1000 V | 15pF @ 4V, 1MHz | — | -55°C ~ 150°C | ✓ |