Diyotlar - Doğrultucular - Tekil
- Komponent
- 49,938
- Marka
- 57
Komponentler
10,000 sonuç · Sayfa 147/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BA158G B0G
DIODE GEN PURP 600V 1A DO204AL |
Taiwan Semiconductor | Market | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 150 ns | -55°C ~ 150°C | — |
|
BA158G R0G
DIODE GEN PURP 600V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 150 ns | -55°C ~ 150°C | — |
|
BA158G R1G
DIODE GEN PURP 600V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 150 ns | -55°C ~ 150°C | — |
|
BA158GHA0G
DIODE GEN PURP 600V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 150 ns | -55°C ~ 150°C | — |
|
BA158GHB0G
DIODE GEN PURP 600V 1A DO204AL |
Taiwan Semiconductor | Market | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 150 ns | -55°C ~ 150°C | — |
|
BA158GHR0G
DIODE GEN PURP 600V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 150 ns | -55°C ~ 150°C | — |
|
BA158GHR1G
DIODE GEN PURP 600V 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 150 ns | -55°C ~ 150°C | — |
|
BA158GP-AP
DIODE GPP 1A DO-41 |
Micro Commercial Components (MCC) | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | — | — | 15pF @ 4V, 1MHz | 150 ns | -65°C ~ 150°C | — |
|
BA158GP-E3/54
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.3 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 250 ns | -65°C ~ 175°C | ✓ |
|
BA158GP-E3/73
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.3 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 250 ns | -65°C ~ 175°C | ✓ |
|
BA158GP-TP
DIODE GPP 1A DO-41 |
Micro Commercial Components (MCC) | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | — | — | 15pF @ 4V, 1MHz | 150 ns | -65°C ~ 150°C | — |
|
BA158GPE-E3/54
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.3 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 250 ns | -65°C ~ 175°C | ✓ |
|
BA158GPEHE3/54
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.3 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 250 ns | -65°C ~ 175°C | ✓ |
|
BA158GPHE3/54
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.3 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 250 ns | -65°C ~ 175°C | ✓ |
|
BA158GPHE3/73
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.3 V @ 1 A | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 250 ns | -65°C ~ 175°C | ✓ |
|
BA159
DIODE FR DO-41 1000V 1A |
Diotec Semiconductor | Active | Through Hole | DO-204AC, DO-41, Axial | DO-41/DO-204AC | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.3 V @ 1 A | 5 µA @ 1000 V | — | 300 ns | -50°C ~ 150°C | — |
|
BA159
Fast Rect, 1000V, 1.00A, 300ns |
DComponents | Active | — | — | — | — | 1000 V | Standard | 1A | — | — | — | 300 ns | — | ✓ |
|
BA159-AP
DIODE GPP 1A DO-41 |
Micro Commercial Components (MCC) | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 1A | — | — | 15pF @ 4V, 1MHz | 250 ns | -65°C ~ 125°C | ✓ |
|
BA159-E3/54
DIODE GEN PURP 1KV 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.3 V @ 1 A | 5 µA @ 1000 V | 12pF @ 4V, 1MHz | 500 ns | -65°C ~ 125°C | ✓ |
|
BA159-E3/73
DIODE GEN PURP 1KV 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.3 V @ 1 A | 5 µA @ 1000 V | 12pF @ 4V, 1MHz | 500 ns | -65°C ~ 125°C | ✓ |
|
BA159-TP
DIODE GPP 1A DO-41 |
Micro Commercial Components (MCC) | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 1A | — | — | 15pF @ 4V, 1MHz | 250 ns | -65°C ~ 125°C | ✓ |
|
BA159BULK
DIODE GEN PURP 1000V 1A DO41 |
EIC Semiconductor, Inc. | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.3 V @ 1 A | 5 µA @ 1000 V | 20pF @ 4V, 1MHz | 250 ns | -65°C ~ 150°C | — |
|
BA159DGP-E3/54
DIODE GEN PURP 800V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.3 V @ 1 A | 5 µA @ 800 V | 15pF @ 4V, 1MHz | 500 ns | -65°C ~ 175°C | ✓ |
|
BA159DGP-E3/73
DIODE GEN PURP 800V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.3 V @ 1 A | 5 µA @ 800 V | 15pF @ 4V, 1MHz | 500 ns | -65°C ~ 175°C | ✓ |
|
BA159DGPHE3/54
DIODE GEN PURP 800V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.3 V @ 1 A | 5 µA @ 800 V | 15pF @ 4V, 1MHz | 500 ns | -65°C ~ 175°C | ✓ |
|
BA159DGPHE3/73
DIODE GEN PURP 800V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.3 V @ 1 A | 5 µA @ 800 V | 15pF @ 4V, 1MHz | 500 ns | -65°C ~ 175°C | ✓ |
|
BA159G A0G
DIODE GEN PURP 1KV 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | 250 ns | -55°C ~ 150°C | — |
|
BA159G B0G
DIODE GEN PURP 1A DO204AL |
Taiwan Semiconductor | Market | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | — | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | 250 ns | -55°C ~ 150°C | — |
|
BA159G R0G
DIODE GEN PURP 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | — | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | 250 ns | -55°C ~ 150°C | — |
|
BA159G R1G
DIODE GEN PURP 1A DO204AL |
Taiwan Semiconductor | Market | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | — | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | 250 ns | -55°C ~ 150°C | — |
|
BA159GHA0G
DIODE GEN PURP 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | — | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | 250 ns | -55°C ~ 150°C | — |
|
BA159GHB0G
DIODE GEN PURP 1A DO204AL |
Taiwan Semiconductor | Market | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | — | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | 250 ns | -55°C ~ 150°C | — |
|
BA159GHR0G
DIODE GEN PURP 1A DO204AL |
Taiwan Semiconductor | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | — | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | 250 ns | -55°C ~ 150°C | — |
|
BA159GHR1G
DIODE GEN PURP 1A DO204AL |
Taiwan Semiconductor | Market | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | — | Standard | 1A | 1.2 V @ 1 A | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | 250 ns | -55°C ~ 150°C | — |
|
BA159GP-AP
DIODE GPP 1A DO-41 |
Micro Commercial Components (MCC) | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 1A | — | — | 15pF @ 4V, 1MHz | 250 ns | -65°C ~ 150°C | — |
|
BA159GP-E3/54
DIODE GEN PURP 1KV 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.3 V @ 1 A | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | 500 ns | -65°C ~ 175°C | ✓ |
|
BA159GP-E3/73
DIODE GEN PURP 1KV 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.3 V @ 1 A | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | 500 ns | -65°C ~ 175°C | ✓ |
|
BA159GP-TP
DIODE GPP 1A DO-41 |
Micro Commercial Components (MCC) | Active | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 1A | — | — | 15pF @ 4V, 1MHz | 250 ns | -65°C ~ 150°C | — |
|
BA159GPE-E3/53
DIODE GEN PURP 800V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.3 V @ 1 A | 5 µA @ 800 V | 15pF @ 4V, 1MHz | 500 ns | -65°C ~ 175°C | ✓ |
|
BA159GPE-E3/54
DIODE GEN PURP 1KV 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.3 V @ 1 A | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | 500 ns | -65°C ~ 175°C | ✓ |
|
BA159GPE-E3/73
DIODE GEN PURP 1KV 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.3 V @ 1 A | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | 500 ns | -65°C ~ 175°C | ✓ |
|
BA159GPEHE3/53
DIODE GEN PURP 800V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.3 V @ 1 A | 5 µA @ 800 V | 15pF @ 4V, 1MHz | 500 ns | -65°C ~ 175°C | ✓ |
|
BA159GPEHE3/54
DIODE GEN PURP 1KV 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.3 V @ 1 A | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | 500 ns | -65°C ~ 175°C | ✓ |
|
BA159GPEHE3/73
DIODE GEN PURP 1KV 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.3 V @ 1 A | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | 500 ns | -65°C ~ 175°C | ✓ |
|
BA159GPHE3/54
DIODE GEN PURP 1KV 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.3 V @ 1 A | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | 500 ns | -65°C ~ 175°C | ✓ |
|
BA159GPHE3/73
DIODE GEN PURP 1KV 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 1A | 1.3 V @ 1 A | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | 500 ns | -65°C ~ 175°C | ✓ |
|
BA604-GS08
DIODE GP 50V 200MA SOD80 |
Vishay | Obsolete | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 200mA (DC) | 1.1 V @ 50 mA | 50 nA @ 20 V | 4pF @ 0V, 1MHz | 20 ns | -65°C ~ 175°C | ✓ |
|
BA604-GS18
DIODE GP 50V 200MA SOD80 |
Vishay | Obsolete | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | Standard | 200mA (DC) | 1.1 V @ 50 mA | 50 nA @ 20 V | 4pF @ 0V, 1MHz | 20 ns | -65°C ~ 175°C | ✓ |
|
BA892-02V
SILICON RF SWITCHING DIODE |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BA892-02V-E6327
RECTIFIER DIODE, 35V |
Rochester Electronics | Active | — | SC-79, SOD-523 | PG-SC79-2 | — | — | Standard - Single | — | — | — | 1.1pF @ 3V, 1MHz | — | — | — |