PMIC - Kapı Sürücüleri
- Komponent
- 6,680
- Marka
- 32
Komponentler
6,680 sonuç · Sayfa 41/134| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Input Type | Supplier Device Package | Voltage - Supply | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRS21271SPBF
IC GATE DRVR HIGH-SIDE 8SOIC |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 9V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 80ns, 40ns | — |
|
IRS21271STRPBF
IC GATE DRVR HIGH-SIDE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 9V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 80ns, 40ns | — |
|
IRS2127PBF
IC GATE DRVR HIGH-SIDE 8DIP |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 12V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 80ns, 40ns | — |
|
IRS2127SPBF
IC GATE DRVR HIGH-SIDE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 12V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 80ns, 40ns | — |
|
IRS2127STRPBF
IC GATE DRVR HIGH-SIDE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 12V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 80ns, 40ns | — |
|
IRS21281PBF
BUFFER/INVERTER BASED MOSFET DRI |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting | 8-PDIP | 9V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 80ns, 40ns | — |
|
IRS21281PBF
IC GATE DRVR HIGH-SIDE 8DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting | 8-PDIP | 9V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 80ns, 40ns | — |
|
IRS21281SPBF
BUFFER/INVERTER BASED MOSFET DRI |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 9V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 80ns, 40ns | — |
|
IRS21281SPBF
IC GATE DRVR HIGH-SIDE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 9V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 80ns, 40ns | — |
|
IRS21281STRPBF
IC GATE DRVR HIGH-SIDE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 9V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 80ns, 40ns | — |
|
IRS2128PBF
BUFFER/INVERTER BASED MOSFET DRI |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting | 8-PDIP | 12V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 80ns, 40ns | — |
|
IRS2128PBF
IC GATE DRVR HIGH-SIDE 8DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting | 8-PDIP | 12V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 80ns, 40ns | — |
|
IRS2128SPBF
BUFFER/INVERTER BASED MOSFET DRI |
Rochester Electronics | Active | -40°C ~ 125°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 80ns, 40ns | — |
|
IRS2128SPBF
IC GATE DRVR HIGH-SIDE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 12V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 80ns, 40ns | — |
|
IRS2128STRPBF
BUFFER/INVERTER BASED MOSFET DRI |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 12V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 80ns, 40ns | — |
|
IRS2128STRPBF
IC GATE DRVR HIGH-SIDE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 12V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 80ns, 40ns | — |
|
IRS21531DPBF
IRS21531 - GATE DRIVER |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
IRS21531DPBF
IC GATE DRVR HALF-BRIDGE 8DIP |
Infineon Technologies | Not For New Designs | -40°C ~ 125°C (TJ) | Through Hole | — | RC Input Circuit | 8-PDIP | 10V ~ 15.4V | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | — | 180mA, 260mA | 600 V | 120ns, 50ns | — |
|
IRS21531DSPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Rochester Electronics | Active | -40°C ~ 125°C (TJ) | Surface Mount | — | RC Input Circuit | 8-SOIC | 10V ~ 15.4V | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | — | 180mA, 260mA | 600 V | 120ns, 50ns | — |
|
IRS21531DSTRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Active | -40°C ~ 125°C (TJ) | Surface Mount | — | RC Input Circuit | 8-SOIC | 10V ~ 15.4V | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | — | 180mA, 260mA | 600 V | 120ns, 50ns | — |
|
IRS2153DPBF
IC GATE DRVR HALF-BRIDGE 8DIP |
Infineon Technologies | Not For New Designs | -40°C ~ 125°C (TJ) | Through Hole | — | RC Input Circuit | 8-PDIP | 10V ~ 15.4V | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | — | 180mA, 260mA | 600 V | 120ns, 50ns | — |
|
IRS2153DSPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Active | -40°C ~ 125°C (TJ) | Surface Mount | — | RC Input Circuit | 8-SOIC | 10V ~ 15.4V | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | — | 180mA, 260mA | 600 V | 120ns, 50ns | — |
|
IRS2153DSPBF
IRS2153 - GATE DRIVER |
Rochester Electronics | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
IRS2153DSTRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Active | -40°C ~ 125°C (TJ) | Surface Mount | — | RC Input Circuit | 8-SOIC | 10V ~ 15.4V | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | — | 180mA, 260mA | 600 V | 120ns, 50ns | — |
|
IRS21814MPBF
IC GATE DRVR HALF-BRIDGE 16MLPQ |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | 16-VFQFN Exposed Pad, 14 Leads | Non-Inverting | 16-MLPQ (4x4) | 10V ~ 20V | Independent | Half-Bridge | 2 | N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 40ns, 20ns | — |
|
IRS21814MTRPBF
IC GATE DRVR HALF-BRIDGE 16MLPQ |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | 16-VFQFN Exposed Pad, 14 Leads | Non-Inverting | 16-MLPQ (4x4) | 10V ~ 20V | Independent | Half-Bridge | 2 | N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 40ns, 20ns | — |
|
IRS21814PBF
IRS21814 - GATE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 14-DIP | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 40ns, 20ns | — |
|
IRS21814SPBF
IC GATE DRVR HALF-BRIDGE 14SOIC |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 14-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 40ns, 20ns | — |
|
IRS21814STRPBF
IC GATE DRVR HALF-BRIDGE 14SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 14-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 40ns, 20ns | — |
|
IRS2181PBF
IC GATE DRVR HALF-BRIDGE 8DIP |
Rochester Electronics | Not For New Designs | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 40ns, 20ns | — |
|
IRS2181SPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 40ns, 20ns | — |
|
IRS2181STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 40ns, 20ns | — |
|
IRS2181STRPBF
IRS2181 - GATE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 40ns, 20ns | — |
|
IRS21834PBF
IC GATE DRVR HALF-BRIDGE 14DIP |
Rochester Electronics | Not For New Designs | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting, Non-Inverting | 14-DIP | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 40ns, 20ns | — |
|
IRS21834SPBF
IC GATE DRVR HALF-BRIDGE 14SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting, Non-Inverting | 14-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 40ns, 20ns | — |
|
IRS21834STRPBF
IC GATE DRVR HALF-BRIDGE 14SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting, Non-Inverting | 14-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 40ns, 20ns | — |
|
IRS2183PBF
IC GATE DRVR HALF-BRIDGE 8DIP |
Rochester Electronics | Not For New Designs | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting, Non-Inverting | 8-PDIP | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 40ns, 20ns | — |
|
IRS2183SPBF
IRS2183 - HALF BRIDGE BASED PERI |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting, Non-Inverting | 8-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 40ns, 20ns | — |
|
IRS2183STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting, Non-Inverting | 8-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 40ns, 20ns | — |
|
IRS21844MPBF
IC GATE DRVR HALF-BRIDGE 16MLPQ |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | 16-VFQFN Exposed Pad, 14 Leads | Non-Inverting | 16-MLPQ (4x4) | 10V ~ 20V | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 40ns, 20ns | — |
|
IRS21844MTRPBF
IC GATE DRVR HALF-BRIDGE 16MLPQ |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | 16-VFQFN Exposed Pad, 14 Leads | Non-Inverting | 16-MLPQ (4x4) | 10V ~ 20V | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 40ns, 20ns | — |
|
IRS21844PBF
IC GATE DRVR HALF-BRIDGE 14DIP |
Infineon Technologies | Not For New Designs | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 14-DIP | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 40ns, 20ns | — |
|
IRS21844SPBF
IC GATE DRVR HALF-BRIDGE 14SOIC |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 14-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 40ns, 20ns | — |
|
IRS21844STRPBF
IC GATE DRVR HALF-BRIDGE 14SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 14-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 40ns, 20ns | — |
|
IRS2184PBF
IC GATE DRVR HALF-BRIDGE 8DIP |
Infineon Technologies | Not For New Designs | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 40ns, 20ns | — |
|
IRS2184SPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 40ns, 20ns | — |
|
IRS2184STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 40ns, 20ns | — |
|
IRS2184STRPBF
IRS2184 - GATE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 40ns, 20ns | — |
|
IRS21850SPBF
IC GATE DRVR HIGH-SIDE 8SOIC |
Infineon Technologies | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 4A, 4A | 600 V | 15ns, 15ns | — |
|
IRS21850SPBF
IRS21850 - GATE DRIVER |
Rochester Electronics | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 4A, 4A | 600 V | 15ns, 15ns | — |