PMIC - Kapı Sürücüleri
- Komponent
- 6,680
- Marka
- 32
Komponentler
6,680 sonuç · Sayfa 39/134| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Input Type | Supplier Device Package | Voltage - Supply | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRS2001PBF
BUFFER/INVERTER BASED PERIPHERAL |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 200 V | 70ns, 35ns | — |
|
IRS2001PBF
IC GATE DRVR HALF-BRIDGE 8DIP |
Infineon Technologies | Not For New Designs | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 200 V | 70ns, 35ns | — |
|
IRS2001PBF-INF
BUFFER/INVERTER BASED PERIPHERAL |
Rochester Electronics | Active | -40°C ~ 125°C (TJ) | Through Hole | — | Non-Inverting | 8-DIP | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 200 V | 70ns, 35ns | — |
|
IRS2001SPBF
BUFFER/INVERTER BASED PERIPHERAL |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 200 V | 70ns, 35ns | — |
|
IRS2001SPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
WEC | Not For New Designs | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 200 V | 70ns, 35ns | — |
|
IRS2001STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Not For New Designs | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 200 V | 70ns, 35ns | — |
|
IRS2003PBF
IC GATE DRVR HALF-BRIDGE 8DIP |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting, Non-Inverting | 8-PDIP | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 200 V | 70ns, 35ns | — |
|
IRS2003SPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Not For New Designs | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting, Non-Inverting | 8-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 200 V | 70ns, 35ns | — |
|
IRS2003STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Not For New Designs | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting, Non-Inverting | 8-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 200 V | 70ns, 35ns | — |
|
IRS2004PBF
IC GATE DRVR HALF-BRIDGE 8DIP |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 200 V | 70ns, 35ns | — |
|
IRS2004SPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Not For New Designs | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 200 V | 70ns, 35ns | — |
|
IRS2004STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Not For New Designs | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 200 V | 70ns, 35ns | — |
|
IRS2005MTRPBF
IC GATE DRVR HALF-BRIDGE 14MLPQ |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | 14-VFQFN Exposed Pad | Non-Inverting | 14-MLPQ (4x4) | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 200 V | 70ns, 30ns | — |
|
IRS2005SPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 200 V | 70ns, 30ns | — |
|
IRS2005STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 200 V | 70ns, 30ns | — |
|
IRS2007MTRPBFXUMA1
IC 200V HB GATE DRIVER 14VQFN |
Infineon Technologies | Active | -40°C ~ 125°C (TA) | Surface Mount | 14-VFQFN Exposed Pad | Non-Inverting | 14-MLPQ (4x4) | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 200 V | 70ns, 30ns | — |
|
IRS2008MPBFAUMA1
LEVEL SHIFT JUNCTION ISO |
Infineon Technologies | Active | -40°C ~ 125°C (TA) | Surface Mount | 14-VFQFN Exposed Pad | CMOS | 14-MLPQ (4x4) | 10V ~ 20V | Synchronous | Half-Bridge | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 200 V | 70ns, 30ns | — |
|
IRS2008MTRPBFAUMA1
IC 200V HALF BRIDGE GATE DRIVER |
Infineon Technologies | Obsolete | -40°C ~ 125°C (TA) | Surface Mount | 14-VFQFN Exposed Pad | CMOS | 14-MLPQ (4x4) | 10V ~ 20V | Synchronous | Half-Bridge | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 200 V | 70ns, 30ns | — |
|
IRS2008MTRPBFXUMA1
IC 200V HB GATE DRIVER 14VQFN |
Infineon Technologies | Active | -40°C ~ 125°C (TA) | Surface Mount | 14-VFQFN Exposed Pad | Non-Inverting | 14-MLPQ (4x4) | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 200 V | 70ns, 30ns | — |
|
IRS2008SPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 200 V | 70ns, 30ns | — |
|
IRS2008STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 200 V | 70ns, 30ns | — |
|
IRS2011PBF
IC GATE DRVR HALF-BRIDGE 8DIP |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting | 8-PDIP | 10V ~ 20V | Independent | Half-Bridge | 2 | N-Channel MOSFET | 0.8V, 2.7V | 1A, 1A | 200 V | 25ns, 15ns | — |
|
IRS2011SPBF
IRS2011 - GATE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | N-Channel MOSFET | 0.8V, 2.7V | 1A, 1A | 200 V | 25ns, 15ns | — |
|
IRS2011STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | N-Channel MOSFET | 0.7V, 2.5V | 1A, 1A | 200 V | 25ns, 15ns | — |
|
IRS20752LTRPBF
IC GATE DRVR HIGH-SIDE SOT23-6 |
Infineon Technologies | Active | -40°C ~ 125°C (TJ) | Surface Mount | SOT-23-6 | Non-Inverting | PG-SOT23-6 | 10V ~ 18V | Single | High-Side | 1 | N-Channel MOSFET | 0.8V, 2.2V | 160mA, 240mA | 200 V | 85ns, 40ns | — |
|
IRS2101PBF
IC GATE DRV HI-SIDE/LO-SIDE 8DIP |
Infineon Technologies | Not For New Designs | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 10V ~ 20V | Independent | High-Side or Low-Side | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 70ns, 35ns | — |
|
IRS2101SPBF
IC GATE DRVR HI/LOW SIDE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Independent | High-Side or Low-Side | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 70ns, 35ns | — |
|
IRS2101STRPBF
IC GATE DRVR HI/LOW SIDE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Independent | High-Side or Low-Side | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 70ns, 35ns | — |
|
IRS2103PBF
IC GATE DRVR HALF-BRIDGE 8DIP |
Infineon Technologies | Not For New Designs | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting, Non-Inverting | 8-PDIP | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 70ns, 35ns | — |
|
IRS2103PBF
IRS2103 - GATE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting, Non-Inverting | 8-PDIP | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 70ns, 35ns | — |
|
IRS2103SPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting, Non-Inverting | 8-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 70ns, 35ns | — |
|
IRS2103STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting, Non-Inverting | 8-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 70ns, 35ns | — |
|
IRS2104PBF
IC GATE DRVR HALF-BRIDGE 8DIP |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 70ns, 35ns | — |
|
IRS2104SPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 70ns, 35ns | — |
|
IRS2104STRPBF
IRS2104 - GATE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 70ns, 35ns | — |
|
IRS2104STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 70ns, 35ns | — |
|
IRS210614SPBF
IC GATE DRVR HALF-BRIDGE 14SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 14-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 100ns, 35ns | — |
|
IRS210614STRPBF
IC GATE DRVR HALF-BRIDGE 14SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 14-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 100ns, 35ns | — |
|
IRS21064PBF
IC GATE DRVR HI/LOW SIDE 14DIP |
Rochester Electronics | Not For New Designs | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 14-DIP | 10V ~ 20V | Independent | High-Side or Low-Side | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 100ns, 35ns | — |
|
IRS21064SPBF
IC GATE DRVR HI/LOW SIDE 14SOIC |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 14-SOIC | 10V ~ 20V | Independent | High-Side or Low-Side | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 100ns, 35ns | — |
|
IRS21064STRPBF
IC GATE DRVR HI/LOW SIDE 14SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 14-SOIC | 10V ~ 20V | Independent | High-Side or Low-Side | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 100ns, 35ns | — |
|
IRS2106PBF
IC GATE DRV HI-SIDE/LO-SIDE 8DIP |
Infineon Technologies | Not For New Designs | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 10V ~ 20V | Independent | High-Side or Low-Side | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 100ns, 35ns | — |
|
IRS2106SPBF
IC GATE DRVR HI/LOW SIDE 8SOIC |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Independent | High-Side or Low-Side | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 100ns, 35ns | — |
|
IRS2106STRPBF
IC GATE DRVR HI/LOW SIDE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Independent | High-Side or Low-Side | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 100ns, 35ns | — |
|
IRS21084PBF
IC GATE DRVR HALF-BRIDGE 14DIP |
Rochester Electronics | Not For New Designs | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting, Non-Inverting | 14-DIP | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 100ns, 35ns | — |
|
IRS21084SPBF
IC GATE DRVR HALF-BRIDGE 14SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting, Non-Inverting | 14-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 100ns, 35ns | — |
|
IRS21084STRPBF
IC GATE DRVR HALF-BRIDGE 14SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting, Non-Inverting | 14-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 100ns, 35ns | — |
|
IRS2108PBF
IC GATE DRVR HALF-BRIDGE 8DIP |
Rochester Electronics | Not For New Designs | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting, Non-Inverting | 8-PDIP | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 100ns, 35ns | — |
|
IRS2108SPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting, Non-Inverting | 8-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 100ns, 35ns | — |
|
IRS2108STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting, Non-Inverting | 8-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 100ns, 35ns | — |