PMIC - Kapı Sürücüleri
- Komponent
- 6,680
- Marka
- 32
Komponentler
6,680 sonuç · Sayfa 40/134| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Input Type | Supplier Device Package | Voltage - Supply | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRS21091PBF
IC GATE DRVR HALF-BRIDGE 8DIP |
Rochester Electronics | Not For New Designs | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 100ns, 35ns | — |
|
IRS21091SPBF
IRS21091 - GATE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 100ns, 35ns | — |
|
IRS21091STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 100ns, 35ns | — |
|
IRS21091STRPBF
IRS21091 - GATE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 100ns, 35ns | — |
|
IRS21094PBF
IRS21094 - GATE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 14-DIP | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 100ns, 35ns | — |
|
IRS21094PBF
IC GATE DRVR HALF-BRIDGE 14DIP |
Infineon Technologies | Not For New Designs | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 14-DIP | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 100ns, 35ns | — |
|
IRS21094SPBF
IRS21094 - GATE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 14-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 100ns, 35ns | — |
|
IRS21094STRPBF
IC GATE DRVR HALF-BRIDGE 14SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 14-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 100ns, 35ns | — |
|
IRS2109C
IC GATE DRVR MOSFET |
Infineon Technologies | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
IRS2109PBF
IRS2109 - GATE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 100ns, 35ns | — |
|
IRS2109PBF
IC GATE DRVR HALF-BRIDGE 8DIP |
Infineon Technologies | Not For New Designs | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 100ns, 35ns | — |
|
IRS2109SPBF
IRS2109 - GATE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 100ns, 35ns | — |
|
IRS2109STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 100ns, 35ns | — |
|
IRS2110PBF
IC GATE DRVR HALF-BRIDGE 14DIP |
Infineon Technologies | Not For New Designs | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 14-DIP | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2.5A, 2.5A | 500 V | 25ns, 17ns | — |
|
IRS2110SPBF
IC GATE DRVR HALF-BRIDGE 16SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2.5A, 2.5A | 500 V | 25ns, 17ns | — |
|
IRS2110STRPBF
IC GATE DRVR HALF-BRIDGE 16SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2.5A, 2.5A | 500 V | 25ns, 17ns | — |
|
IRS2110STRPBF
IRS2110 - GATE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2.5A, 2.5A | 500 V | 25ns, 17ns | — |
|
IRS2111PBF
IC GATE DRVR HALF-BRIDGE 8DIP |
Rochester Electronics | Not For New Designs | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting, Non-Inverting | 8-PDIP | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 8.3V, 12.6V | 290mA, 600mA | 600 V | 75ns, 35ns | — |
|
IRS2111SPBF
IRS2111 - GATE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting, Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 8.3V, 12.6V | 290mA, 600mA | 600 V | 75ns, 35ns | — |
|
IRS2111STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting, Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 8.3V, 12.6V | 290mA, 600mA | 600 V | 75ns, 35ns | — |
|
IRS2112PBF
IC GATE DRVR HALF-BRIDGE 14DIP |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 14-DIP | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 290mA, 600mA | 600 V | 75ns, 35ns | — |
|
IRS2112SPBF
IC GATE DRVR HALF-BRIDGE 16SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 290mA, 600mA | 600 V | 75ns, 35ns | — |
|
IRS2112STRPBF
IC GATE DRVR HALF-BRIDGE 16SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 290mA, 600mA | 600 V | 75ns, 35ns | — |
|
IRS2113MPBF
IC GATE DRVR HALF-BRIDGE 16MLPQ |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | 16-VFQFN Exposed Pad, 14 Leads | Non-Inverting | 16-MLPQ (4x4) | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2.5A, 2.5A | 600 V | 25ns, 17ns | — |
|
IRS2113MTRPBF
IC GATE DRVR HALF-BRIDGE 16MLPQ |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | 16-VFQFN Exposed Pad, 14 Leads | Non-Inverting | 16-MLPQ (4x4) | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2.5A, 2.5A | 600 V | 25ns, 17ns | — |
|
IRS2113PBF
IC GATE DRVR HALF-BRIDGE 14DIP |
Infineon Technologies | Not For New Designs | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 14-DIP | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2.5A, 2.5A | 600 V | 25ns, 17ns | — |
|
IRS2113SPBF
IC GATE DRVR HALF-BRIDGE 16SOIC |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2.5A, 2.5A | 600 V | 25ns, 17ns | — |
|
IRS2113STRPBF
IC GATE DRVR HALF-BRIDGE 16SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2.5A, 2.5A | 600 V | 25ns, 17ns | — |
|
IRS21171SPBF
BUFFER/INVERTER BASED PERIPHERAL |
Rochester Electronics | Active | -40°C ~ 125°C (TA) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 75ns, 35ns | — |
|
IRS21171STRPBF
IC GATE DRVR HIGH-SIDE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 75ns, 35ns | — |
|
IRS21171STRPBF
BUFFER/INVERTER BASED PERIPHERAL |
Rochester Electronics | Active | -40°C ~ 125°C (TA) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 75ns, 35ns | — |
|
IRS2117PBF
IC GATE DRVR HIGH-SIDE 8DIP |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 290mA, 600mA | 600 V | 75ns, 35ns | — |
|
IRS2117SPBF
IC GATE DRVR HIGH-SIDE 8SOIC |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 290mA, 600mA | 600 V | 75ns, 35ns | — |
|
IRS2117STRPBF
IC GATE DRVR HIGH-SIDE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 290mA, 600mA | 600 V | 75ns, 35ns | — |
|
IRS2117STRPBF
IRS2117 - GATE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 290mA, 600mA | 600 V | 75ns, 35ns | — |
|
IRS2118PBF
IRS2118 - GATE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting | 8-PDIP | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 290mA, 600mA | 600 V | 75ns, 35ns | — |
|
IRS2118PBF
IC GATE DRVR HIGH-SIDE 8DIP |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting | 8-PDIP | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 290mA, 600mA | 600 V | 75ns, 35ns | — |
|
IRS2118SPBF
IC GATE DRVR HIGH-SIDE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 290mA, 600mA | 600 V | 75ns, 35ns | — |
|
IRS2118SPBF
IRS2118 - GATE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 290mA, 600mA | 600 V | 75ns, 35ns | — |
|
IRS2118STRPBF
IC GATE DRVR HIGH-SIDE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 290mA, 600mA | 600 V | 75ns, 35ns | — |
|
IRS2118STRPBF
IRS2118 - SINGLE CHANNEL DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 290mA, 600mA | 600 V | 75ns, 35ns | — |
|
IRS2123SPBF
IC GATE DRVR HIGH-SIDE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | — | 500mA, 500mA | 600 V | 80ns, 80ns | — |
|
IRS2123SPBF
HIGH SIDE DRIVER IC |
Rochester Electronics | Active | -40°C ~ 125°C (TA) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | — | 500mA, 500mA | 600 V | 80ns, 80ns | — |
|
IRS2123STRPBF
IC GATE DRVR HIGH-SIDE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | — | 500mA, 500mA | 600 V | 80ns, 80ns | — |
|
IRS2124SPBF
IC GATE DRVR HIGH-SIDE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | — | 500mA, 500mA | 600 V | 80ns, 80ns | — |
|
IRS2124SPBF
HIGH SIDE DRIVER IC |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | — | 500mA, 500mA | 600 V | 80ns, 80ns | — |
|
IRS2124STRPBF
IRS2124 - HIGH SIDE DRIVER IC |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | — | 500mA, 500mA | 600 V | 80ns, 80ns | — |
|
IRS2124STRPBF
IC GATE DRVR HIGH-SIDE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | — | 500mA, 500mA | 600 V | 80ns, 80ns | — |
|
IRS21271PBF
IRS21271 - GATE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 9V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 80ns, 40ns | — |
|
IRS21271PBF
IC GATE DRVR HIGH-SIDE 8DIP |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 9V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600 V | 80ns, 40ns | — |