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Komponentler
10,000 sonuç · Sayfa 53/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4152TR
DIODE GEN PURP 40V 200MA DO35 |
onsemi | Obsolete | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 40 V | Standard | 200mA | 880 mV @ 20 mA | 50 nA @ 30 V | 2pF @ 0V, 1MHz | 4 ns | 175°C (Max) | — |
|
1N4153
DIODE GEN PURP 75V 200MA DO35 |
onsemi | Obsolete | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 75 V | Standard | 200mA | 880 mV @ 20 mA | 50 nA @ 50 V | 2pF @ 0V, 1MHz | 4 ns | 175°C (Max) | ✓ |
|
1N4153 BK
DIODE |
Central Semiconductor | Last Time Buy | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 75 V | Standard | 150mA | 880 mV @ 20 mA | 50 nA @ 75 V | 2pF @ 0V, 1MHz | 4 ns | -65°C ~ 200°C | — |
|
1N4153 TR
DIODE |
Central Semiconductor | Last Time Buy | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 75 V | Standard | 150mA | 880 mV @ 20 mA | 50 nA @ 75 V | 2pF @ 0V, 1MHz | 4 ns | -65°C ~ 200°C | — |
|
1N4153-1
DIODE GEN PURP 50V 150MA DO35 |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 50 V | Standard | 150mA | 880 mV @ 20 mA | 50 nA @ 50 V | — | 4 ns | -65°C ~ 175°C | — |
|
1N4153-1/TR
SIGNAL/COMPUTER DIODE |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 50 V | Standard | 150mA | 880 mV @ 20 mA | 50 nA @ 50 V | — | 4 ns | -65°C ~ 175°C | — |
|
1N4153_T50R
DIODE GEN PURP 75V 200MA DO35 |
onsemi | Obsolete | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 75 V | Standard | 200mA | 880 mV @ 20 mA | 50 nA @ 50 V | 2pF @ 0V, 1MHz | 4 ns | 175°C (Max) | ✓ |
|
1N4153TR
DIODE GEN PURP 75V 200MA DO35 |
onsemi | Obsolete | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 75 V | Standard | 200mA | 880 mV @ 20 mA | 50 nA @ 50 V | 2pF @ 0V, 1MHz | 4 ns | 175°C (Max) | ✓ |
|
1N4153UR-1
DIODE GEN PURP 50V 150MA DO213AA |
Microchip Technology | Active | Surface Mount | DO-213AA | DO-213AA | Small Signal =< 200mA (Io), Any Speed | 50 V | Standard | 150mA | — | 50 nA @ 50 V | 2pF @ 0V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
1N4153UR-1/TR
SIGNAL/COMPUTER DIODE |
Microchip Technology | Active | Surface Mount | DO-213AA | DO-213AA | Small Signal =< 200mA (Io), Any Speed | 50 V | Standard | 150mA | — | 50 nA @ 50 V | 2pF @ 0V, 1MHz | — | -65°C ~ 175°C | — |
|
1N4154
D-SI 35PRV .03A |
NTE Electronics, Inc. | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 35 V | Standard | 100mA | 1 V @ 30 mA | 100 nA @ 25 V | 4pF @ 0V, 1MHz | 4 ns | 175°C (Max) | — |
|
1N4154
DIODE GEN PURP 35V 200MA DO35 |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 35 V | Standard | 200mA | 1 V @ 30 mA | 100 nA @ 25 V | 4pF @ 4V, 1MHz | 2 ns | -65°C ~ 150°C | — |
|
1N4154
DIODE GEN PURP 35V 100MA DO35 |
onsemi | Obsolete | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 35 V | Standard | 100mA | 1 V @ 30 mA | 100 nA @ 25 V | 4pF @ 0V, 1MHz | 4 ns | 175°C (Max) | ✓ |
|
1N4154
RECTIFIER DIODE |
Rochester Electronics | Obsolete | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Small Signal =< 200mA (Io), Any Speed | 35 V | Standard | 100mA | 1 V @ 30 mA | 100 nA @ 25 V | 4pF @ 0V, 1MHz | 4 ns | 175°C (Max) | — |
|
1N4154-1
SIGNAL/COMPUTER DIODE |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Small Signal =< 200mA (Io), Any Speed | 35 V | Standard | 200mA | 1 V @ 30 mA | 100 nA @ 25 V | — | 2 ns | -65°C ~ 150°C | — |
|
1N4154-1E3/TR
SIGNAL/COMPUTER DIODE |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Small Signal =< 200mA (Io), Any Speed | 35 V | Standard | 200mA | 1 V @ 30 mA | 100 nA @ 25 V | — | 2 ns | -65°C ~ 150°C | — |
|
1N4154/TR
SIGNAL/COMPUTER DIODE |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 35 V | Standard | 200mA | 1 V @ 30 mA | 100 nA @ 25 V | 4pF @ 4V, 1MHz | 2 ns | -65°C ~ 150°C | — |
|
1N4154_T50R
DIODE GEN PURP 35V 100MA DO35 |
onsemi | Obsolete | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 35 V | Standard | 100mA | 1 V @ 30 mA | 100 nA @ 25 V | 4pF @ 0V, 1MHz | 4 ns | 175°C (Max) | ✓ |
|
1N4154TAP
DIODE GEN PURP 25V 150MA DO35 |
Vishay | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Small Signal =< 200mA (Io), Any Speed | 25 V | Standard | 150mA | 1 V @ 30 mA | 100 nA @ 25 V | 4pF @ 0V, 1MHz | 4 ns | -65°C ~ 175°C | ✓ |
|
1N4154TR
DIODE GEN PURP 25V 150MA DO35 |
Vishay | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Small Signal =< 200mA (Io), Any Speed | 25 V | Standard | 150mA | 1 V @ 30 mA | 100 nA @ 25 V | 4pF @ 0V, 1MHz | 4 ns | -65°C ~ 175°C | ✓ |
|
1N4154TR
DIODE GEN PURP 35V 100MA DO35 |
onsemi | Obsolete | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 35 V | Standard | 100mA | 1 V @ 30 mA | 100 nA @ 25 V | 4pF @ 0V, 1MHz | 4 ns | 175°C (Max) | ✓ |
|
1N4154TR
RECTIFIER DIODE |
Rochester Electronics | Obsolete | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | Small Signal =< 200mA (Io), Any Speed | 35 V | Standard | 100mA | 1 V @ 30 mA | 100 nA @ 25 V | 4pF @ 0V, 1MHz | 4 ns | 175°C (Max) | — |
|
1N4154TR_S00Z
DIODE GEN PURP 35V 100MA DO35 |
onsemi | Obsolete | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 35 V | Standard | 100mA | 1 V @ 30 mA | 100 nA @ 25 V | 4pF @ 0V, 1MHz | 4 ns | 175°C (Max) | ✓ |
|
1N4245
DIODE GEN PURP 200V 1A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.3 V @ 3 A | 1 µA @ 200 V | — | 5 µs | -65°C ~ 175°C | — |
|
1N4245
DIODE GEN PURP 200V 1A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A (DC) | 1.2 V @ 1 A | 1 µA @ 200 V | — | 2 µs | — | — |
|
1N4245/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.3 V @ 3 A | 1 µA @ 200 V | — | 5 µs | -65°C ~ 175°C | — |
|
1N4245GP-M3/54
DIODE GEN PURPOSE DO-204AL |
Vishay | Obsolete | Through Hole | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N4245GP-M3/73
DIODE GEN PURPOSE DO-204AL |
Vishay | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N4246
RECTIFIER DIODE |
Rochester Electronics | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A (DC) | 1.3 V @ 3 A | 1 µA @ 400 V | — | 5 µs | -65°C ~ 175°C | — |
|
1N4246
R-SI 400V 1A |
NTE Electronics, Inc. | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A (DC) | 1.2 V @ 1 A | 1 µA @ 400 V | — | 2 µs | — | — |
|
1N4246
DIODE GEN PURP 400V 1A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.3 V @ 3 A | 1 µA @ 400 V | — | 5 µs | -65°C ~ 175°C | — |
|
1N4246
DIODE GEN PURP 400V 1A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A (DC) | 1.2 V @ 1 A | 1 µA @ 400 V | — | 2 µs | — | — |
|
1N4246/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.3 V @ 3 A | 1 µA @ 400 V | — | 5 µs | -65°C ~ 175°C | — |
|
1N4246GP-E3/54
DIODE GEN PURP 400V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.2 V @ 1 A | 1 µA @ 400 V | 8pF @ 4V, 1MHz | — | -65°C ~ 160°C | — |
|
1N4246GP-E3/73
DIODE GEN PURP 400V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.2 V @ 1 A | 1 µA @ 400 V | 8pF @ 4V, 1MHz | — | -65°C ~ 160°C | — |
|
1N4246GP-M3/54
DIODE GEN PURP 400V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.2 V @ 1 A | 1 µA @ 400 V | 880pF @ 0V, 1MHz | — | -65°C ~ 160°C | ✓ |
|
1N4246GP-M3/73
DIODE GEN PURP 400V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.2 V @ 1 A | 1 µA @ 400 V | 8pF @ 4V, 1MHz | — | -65°C ~ 160°C | ✓ |
|
1N4246GPHE3/54
DIODE GEN PURP 400V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.2 V @ 1 A | 1 µA @ 400 V | 8pF @ 4V, 1MHz | — | -65°C ~ 160°C | — |
|
1N4246GPHE3/73
DIODE GEN PURP 400V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.2 V @ 1 A | 1 µA @ 400 V | 8pF @ 4V, 1MHz | — | -65°C ~ 160°C | — |
|
1N4247
R-SI 600V 1A |
NTE Electronics, Inc. | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A (DC) | 1.2 V @ 1 A | 1 µA @ 600 V | — | 2 µs | — | — |
|
1N4247
DIODE GEN PURP 600V 1A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.3 V @ 3 A | 1 µA @ 600 V | — | 5 µs | -65°C ~ 175°C | — |
|
1N4247
DIODE GEN PURP 600V 1A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A (DC) | 1.2 V @ 1 A | 1 µA @ 600 V | — | 2 µs | — | — |
|
1N4247/TR
RECTIFIER UFR,FRR |
Microchip Technology | Active | Through Hole | A, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.3 V @ 3 A | 1 µA @ 600 V | — | 5 µs | -65°C ~ 175°C | — |
|
1N4247GP-E3/54
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 1 µA @ 600 V | 8pF @ 4V, 1MHz | — | -65°C ~ 160°C | ✓ |
|
1N4247GP-E3/73
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 1 µA @ 600 V | 8pF @ 4V, 1MHz | — | -65°C ~ 160°C | — |
|
1N4247GP-M3/54
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 1 µA @ 600 V | 8pF @ 4V, 1MHz | — | -65°C ~ 160°C | ✓ |
|
1N4247GP-M3/73
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 1 µA @ 600 V | 8pF @ 4V, 1MHz | — | -65°C ~ 160°C | ✓ |
|
1N4247GPHE3/54
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 1 µA @ 600 V | 8pF @ 4V, 1MHz | — | -65°C ~ 160°C | — |
|
1N4247GPHE3/73
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.2 V @ 1 A | 1 µA @ 600 V | 8pF @ 4V, 1MHz | — | -65°C ~ 160°C | — |
|
1N4248
R-SI 800V 1A |
NTE Electronics, Inc. | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A (DC) | 1.2 V @ 1 A | 1 µA @ 800 V | — | 2 µs | — | — |