Diyotlar - Doğrultucular - Tekil
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Komponentler
10,000 sonuç · Sayfa 32/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N3595UR-1/TR
SIGNAL/COMPUTER DIODE |
Microchip Technology | Active | Surface Mount | DO-213AA | DO-213AA | Small Signal =< 200mA (Io), Any Speed | 125 V | Standard | 150mA (DC) | 1 V @ 200 mA | 1 nA @ 125 V | — | 3 µs | -65°C ~ 175°C | — |
|
1N3595US
DIODE GEN PURP 4A B-MELF |
Microchip Technology | Active | Surface Mount | SQ-MELF, B | B, SQ-MELF | Standard Recovery >500ns, > 200mA (Io) | — | Standard | 4A (DC) | 1 V @ 200 mA | 1 nA @ 125 V | — | 3 µs | -65°C ~ 150°C | — |
|
1N3595US/TR
SIGNAL/COMPUTER DIODE |
Microchip Technology | Active | Surface Mount | SQ-MELF, B | B, SQ-MELF | Standard Recovery >500ns, > 200mA (Io) | — | Standard | 4A (DC) | 1 V @ 200 mA | 1 nA @ 125 V | — | 3 µs | -65°C ~ 150°C | — |
|
1N3600
D-SI .001A |
NTE Electronics, Inc. | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 50 V | Standard | 200mA | 1 V @ 200 mA | 100 nA @ 50 V | — | 4 ns | -65°C ~ 175°C | — |
|
1N3600
DIODE GEN PURP 50V 200MA DO35 |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 50 V | Standard | 200mA | 1 V @ 200 mA | 100 nA @ 50 V | — | 4 ns | -65°C ~ 175°C | — |
|
1N3600/TR
SIGNAL/COMPUTER DIODE |
Microchip Technology | Active | Through Hole | DO-204AH, DO-35, Axial | DO-35 | Small Signal =< 200mA (Io), Any Speed | 50 V | Standard | 200mA | 1 V @ 200 mA | 100 nA @ 50 V | — | 4 ns | -65°C ~ 175°C | — |
|
1N3611
DIODE GEN PURP 200V 1A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 1 µA @ 200 V | — | — | -65°C ~ 175°C | — |
|
1N3611
DIODE GEN PURP 200V 1A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 500 nA @ 200 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N3611/TR
STD RECTIFIER |
Microchip Technology | Active | Through Hole | A, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 1 µA @ 200 V | — | — | -65°C ~ 175°C | — |
|
1N3611E3
RECTIFIER STANDARD RECOVERY GLAS |
Microchip Technology | Active | Through Hole | A, Axial | A, Axial | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 1 µA @ 200 V | — | — | -65°C ~ 175°C | — |
|
1N3611E3/TR
STD RECTIFIER |
Microchip Technology | Active | Through Hole | A, Axial | A, Axial | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1.1 V @ 1 A | 1 µA @ 200 V | — | — | -65°C ~ 175°C | — |
|
1N3611GP-E3/54
DIODE GEN PURP 200V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1 V @ 1 A | 1 µA @ 200 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N3611GP-E3/73
DIODE GEN PURP 200V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1 V @ 1 A | 1 µA @ 200 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N3611GP-M3/54
DIODE GEN PURP 200V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1 V @ 1 A | 1 µA @ 200 V | 8pF @ 4V, 1MHz | 2 µs | -65°C ~ 175°C | ✓ |
|
1N3611GP-M3/73
DIODE GEN PURP 200V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1 V @ 1 A | 1 µA @ 200 V | 8pF @ 4V, 1MHz | 2 µs | -65°C ~ 175°C | ✓ |
|
1N3611GPHE3/54
DIODE GEN PURP 200V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1 V @ 1 A | 1 µA @ 200 V | 8pF @ 4V, 1MHz | 2 µs | -65°C ~ 175°C | — |
|
1N3611GPHE3/73
DIODE GEN PURP 200V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 1A | 1 V @ 1 A | 1 µA @ 200 V | 8pF @ 4V, 1MHz | 2 µs | -65°C ~ 175°C | — |
|
1N3612
DIODE GEN PURP 400V 1A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.1 V @ 1 A | 500 nA @ 400 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N3612
DIODE GEN PURP 400V 1A AXIAL |
Microchip Technology | Market | Through Hole | A, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.1 V @ 1 A | 1 µA @ 400 V | — | — | -65°C ~ 175°C | — |
|
1N3612/TR
STD RECTIFIER |
Microchip Technology | Active | Through Hole | A, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1.1 V @ 1 A | 1 µA @ 400 V | — | — | -65°C ~ 175°C | — |
|
1N3612GP-E3/54
DIODE GEN PURP 400V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1 V @ 1 A | 1 µA @ 400 V | — | 2 µs | -65°C ~ 175°C | ✓ |
|
1N3612GP-E3/73
DIODE GEN PURP 400V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1 V @ 1 A | 1 µA @ 400 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N3612GP-M3/54
DIODE GEN PURPOSE DO-204AL |
Vishay | Obsolete | Through Hole | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N3612GP-M3/73
DIODE GEN PURPOSE DO-204AL |
Vishay | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N3612GPHE3/54
DIODE GEN PURP 400V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1 V @ 1 A | 1 µA @ 400 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N3612GPHE3/73
DIODE GEN PURP 400V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 400 V | Standard | 1A | 1 V @ 1 A | 1 µA @ 400 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N3613
DIODE GEN PURP 600V 1A AXIAL |
Microchip Technology | Active | Through Hole | A, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.1 V @ 1 A | 1 µA @ 600 V | — | — | -65°C ~ 175°C | — |
|
1N3613
DIODE GEN PURP 600V 1A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.1 V @ 1 A | 500 nA @ 600 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N3613/TR
STD RECTIFIER |
Microchip Technology | Active | Through Hole | A, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1.1 V @ 1 A | 1 µA @ 600 V | — | — | -65°C ~ 175°C | — |
|
1N3613GP-E3/54
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1 V @ 1 A | 1 µA @ 600 V | — | 2 µs | -65°C ~ 175°C | ✓ |
|
1N3613GP-E3/73
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Active | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1 V @ 1 A | 1 µA @ 600 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N3613GP-M3/54
DIODE GEN PURPOSE DO-204AL |
Vishay | Obsolete | Through Hole | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N3613GP-M3/73
DIODE GEN PURPOSE DO-204AL |
Vishay | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N3613GPHE3/54
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1 V @ 1 A | 1 µA @ 600 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N3613GPHE3/73
DIODE GEN PURP 600V 1A DO204AL |
Vishay | Obsolete | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 1A | 1 V @ 1 A | 1 µA @ 600 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N3614
DIODE GEN PURP 800V 1A AXIAL |
Semtech | Active | Through Hole | Axial | Axial | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 500 nA @ 800 V | — | 2 µs | -65°C ~ 175°C | — |
|
1N3614
DIODE GEN PURP 800V 1A AXIAL |
Microchip Technology | Market | Through Hole | A, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 1 µA @ 800 V | — | — | -65°C ~ 175°C | — |
|
1N3614/TR
STD RECTIFIER |
Microchip Technology | Active | Through Hole | A, Axial | — | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 1A | 1.1 V @ 1 A | 1 µA @ 800 V | — | — | -65°C ~ 175°C | — |
|
1N3614GP-M3/54
DIODE GEN PURPOSE DO-204AL |
Vishay | Obsolete | Through Hole | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N3614GP-M3/73
DIODE GEN PURPOSE DO-204AL |
Vishay | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
1N3615
DO4 25 AMP SILICON RECTIFIER |
Solid State Inc. | Active | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 16A | 1.2 V @ 50 A | 3 µA @ 50 V | — | — | -65°C ~ 200°C | — |
|
1N3615R
DO4 25 AMP SILICON RECTIFIER |
Solid State Inc. | Active | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | Standard Recovery >500ns, > 200mA (Io) | 50 V | Standard | 16A | 1.2 V @ 50 A | 3 µA @ 50 V | — | — | -65°C ~ 200°C | — |
|
1N3616
DO4 25 AMP SILICON RECTIFIER |
Solid State Inc. | Active | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 16A | 1.2 V @ 50 A | 2.5 µA @ 100 V | — | — | -65°C ~ 200°C | — |
|
1N3616R
DO4 25 AMP SILICON RECTIFIER |
Solid State Inc. | Active | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | Standard Recovery >500ns, > 200mA (Io) | 100 V | Standard | 16A | 1.2 V @ 50 A | 2.5 µA @ 100 V | — | — | -65°C ~ 200°C | — |
|
1N3617
DO4 25 AMP SILICON RECTIFIER |
Solid State Inc. | Active | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | Standard Recovery >500ns, > 200mA (Io) | 150 V | Standard | 16A | 1.2 V @ 50 A | 2.25 µA @ 150 V | — | — | -65°C ~ 200°C | — |
|
1N3617R
DO4 25 AMP SILICON RECTIFIER |
Solid State Inc. | Active | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | Standard Recovery >500ns, > 200mA (Io) | 150 V | Standard | 16A | 1.2 V @ 50 A | 2.25 µA @ 150 V | — | — | -65°C ~ 200°C | — |
|
1N3618
DO4 25 AMP SILICON RECTIFIER |
Solid State Inc. | Active | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 16A | 1.2 V @ 50 A | 2 µA @ 200 V | — | — | -65°C ~ 200°C | — |
|
1N3618R
DO4 25 AMP SILICON RECTIFIER |
Solid State Inc. | Active | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | Standard Recovery >500ns, > 200mA (Io) | 200 V | Standard | 16A | 1.2 V @ 50 A | 2 µA @ 200 V | — | — | -65°C ~ 200°C | — |
|
1N3619
DO4 25 AMP SILICON RECTIFIER |
Solid State Inc. | Active | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | Standard Recovery >500ns, > 200mA (Io) | 300 V | Standard | 16A | 1.2 V @ 50 A | 1.75 µA @ 300 V | — | — | -65°C ~ 200°C | — |
|
1N3619R
DO4 25 AMP SILICON RECTIFIER |
Solid State Inc. | Active | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | Standard Recovery >500ns, > 200mA (Io) | 300 V | Standard | 16A | 1.2 V @ 50 A | 1.75 µA @ 300 V | — | — | -65°C ~ 200°C | — |