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Diyotlar - Doğrultucular - Tekil

Komponent
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Part Status

Mounting Type

Package / Case

Supplier Device Package

Speed

Voltage - DC Reverse (Vr) (Max)

Diode Type

Current - Average Rectified (Io)

Voltage - Forward (Vf) (Max) @ If

Current - Reverse Leakage @ Vr

Capacitance @ Vr, F

Reverse Recovery Time (trr)

Operating Temperature - Junction

Komponentler

10,000 sonuç · Sayfa 185/200
Parça No Üretici Part Status Mounting Type Package / Case Supplier Device Package Speed Voltage - DC Reverse (Vr) (Max) Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Capacitance @ Vr, F Reverse Recovery Time (trr) Operating Temperature - Junction Datasheet
BYC5-1200PQ

DIODE GEN PURP 1.2KV 5A TO220AC

WeEn Semiconductors Co., Ltd Active Through Hole TO-220-2 TO-220AC Fast Recovery =< 500ns, > 200mA (Io) 1200 V Standard 5A 3.2 V @ 5 A 100 µA @ 1200 V 36 ns 175°C (Max)
BYC5-600,127

DIODE GEN PURP 500V 5A TO220AC

WeEn Semiconductors Co., Ltd Active Through Hole TO-220-2 TO-220AC Fast Recovery =< 500ns, > 200mA (Io) 500 V Standard 5A 2.9 V @ 5 A 100 µA @ 600 V 50 ns 150°C (Max)
BYC5-600P127

HYPERFAST RECTIFIER DIODE TO 22

Rochester Electronics Active
BYC5-600PQ

DIODE GEN PURP 600V 5A TO220AC

WeEn Semiconductors Co., Ltd Active Through Hole TO-220-2 TO-220AC Fast Recovery =< 500ns, > 200mA (Io) 600 V Standard 5A 3.3 V @ 5 A 10 µA @ 600 V 25 ns -65°C ~ 175°C
BYC5-600PQ127

HYPERFAST RECTIFIER DIODE

Rochester Electronics Active
BYC58X-600,127

DIODE GEN PURP 600V 8A TO220FP

WeEn Semiconductors Co., Ltd Active Through Hole TO-220-2 Full Pack, Isolated Tab TO-220FP Fast Recovery =< 500ns, > 200mA (Io) 600 V Standard 8A 3.2 V @ 8 A 150 µA @ 600 V 12.5 ns 150°C (Max)
BYC5B-600,118

NOW WEEN - BYC5B-600 - HYPERFAST

Rochester Electronics Active Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK Fast Recovery =< 500ns, > 200mA (Io) 500 V Standard 5A 2.9 V @ 5 A 100 µA @ 600 V 50 ns 150°C (Max)
BYC5B-600,118

DIODE GEN PURP 500V 5A D2PAK

WeEn Semiconductors Co., Ltd Active Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK Fast Recovery =< 500ns, > 200mA (Io) 500 V Standard 5A 2.9 V @ 5 A 100 µA @ 600 V 50 ns 150°C (Max)
BYC5D-500,127

NOW WEEN - BYC5D-500 - HYPERFAST

Rochester Electronics Active Through Hole TO-220-2 TO-220AC Fast Recovery =< 500ns, > 200mA (Io) 500 V Standard 5A 2 V @ 5 A 40 µA @ 500 V 16 ns 150°C (Max)
BYC5D-500,127

DIODE GEN PURP 500V 5A TO220AC

WeEn Semiconductors Co., Ltd Active Through Hole TO-220-2 TO-220AC Fast Recovery =< 500ns, > 200mA (Io) 500 V Standard 5A 2 V @ 5 A 40 µA @ 500 V 16 ns 150°C (Max)
BYC5DX-500,127

NOW WEEN - BYC5DX-500 - HYPERFAS

Rochester Electronics Active Through Hole TO-220-2 Full Pack, Isolated Tab TO-220FP Fast Recovery =< 500ns, > 200mA (Io) 500 V Standard 5A 2 V @ 5 A 40 µA @ 500 V 16 ns 150°C (Max)
BYC5DX-500,127

DIODE GEN PURP 500V 5A TO220FP

WeEn Semiconductors Co., Ltd Active Through Hole TO-220-2 Full Pack, Isolated Tab TO-220FP Fast Recovery =< 500ns, > 200mA (Io) 500 V Standard 5A 2 V @ 5 A 40 µA @ 500 V 16 ns 150°C (Max)
BYC5X-600,127

NOW WEEN - BYC5X-600 - HYPERFAST

Rochester Electronics Active Through Hole TO-220-2 Full Pack TO-220F Fast Recovery =< 500ns, > 200mA (Io) 500 V Standard 5A 2.9 V @ 5 A 100 µA @ 600 V 50 ns 150°C (Max)
BYC5X-600,127

DIODE GEN PURP 500V 5A TO220FP

WeEn Semiconductors Co., Ltd Active Through Hole TO-220-2 Full Pack, Isolated Tab TO-220FP Fast Recovery =< 500ns, > 200mA (Io) 500 V Standard 5A 2.9 V @ 5 A 100 µA @ 600 V 50 ns 150°C (Max)
BYC5X-600P127

HYPERFAST RECTIFIER DIODE TO 22

Rochester Electronics Active
BYC5X-600PQ

DIODE GEN PURP 600V 5A TO220F

WeEn Semiconductors Co., Ltd Active Through Hole TO-220-2 Full Pack, Isolated Tab TO-220F Fast Recovery =< 500ns, > 200mA (Io) 600 V Standard 5A 3.3 V @ 5 A 10 µA @ 600 V 25 ns -65°C ~ 175°C
BYC5X-600PQ127

HYPERFAST RECTIFIER DIODE

Rochester Electronics Active
BYC60W-600PQ

DIODE GEN PURP 600V 60A TO247-2

WeEn Semiconductors Co., Ltd Active Through Hole TO-247-2 TO-247-2 Fast Recovery =< 500ns, > 200mA (Io) 600 V Standard 60A 2.6 V @ 60 A 10 µA @ 600 V 50 ns 175°C (Max)
BYC75W-1200PQ

STANDARD MARKING * HORIZONTAL, R

WeEn Semiconductors Co., Ltd Active Through Hole TO-247-2 TO-247-2 Fast Recovery =< 500ns, > 200mA (Io) 1200 V Standard 75A 250 µA @ 1200 V 85 ns 175°C (Max)
BYC75W-600PQ

DIODE GEN PURP 600V 75A TO247-2

WeEn Semiconductors Co., Ltd Active Through Hole TO-247-2 TO-247-2 Fast Recovery =< 500ns, > 200mA (Io) 600 V Standard 75A 2.75 V @ 75 A 10 µA @ 600 V 50 ns 175°C (Max)
BYC8-1200PQ

BYC8-1200PQ/TO-220AC/STANDARD MA

WeEn Semiconductors Co., Ltd Active Through Hole TO-220-2 TO-220AC Fast Recovery =< 500ns, > 200mA (Io) 1200 V Standard 8A 3.2 V @ 8 A 100 µA @ 1200 V 55 ns 175°C (Max)
BYC8-600,127

DIODE GEN PURP 600V 8A TO220AC

WeEn Semiconductors Co., Ltd Active Through Hole TO-220-2 TO-220AC Fast Recovery =< 500ns, > 200mA (Io) 600 V Standard 8A 2.9 V @ 8 A 150 µA @ 600 V 52 ns 150°C (Max)
BYC8-600P,127

DIODE GEN PURP 600V 8A TO220AC

WeEn Semiconductors Co., Ltd Active Through Hole TO-220-2 TO-220AC Fast Recovery =< 500ns, > 200mA (Io) 600 V Standard 8A 1.9 V @ 8 A 20 µA @ 600 V 18 ns 175°C (Max)
BYC8B-600,118

DIODE GEN PURP 500V 8A D2PAK

WeEn Semiconductors Co., Ltd Active Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK Fast Recovery =< 500ns, > 200mA (Io) 500 V Standard 8A 2.9 V @ 8 A 150 µA @ 600 V 52 ns 150°C (Max)
BYC8B-600P118

HYPERFAST RECTIFIER DIODE D2PAK

Rochester Electronics Active
BYC8B-600PJ

DIODE GEN PURP 600V 8A D2PAK

WeEn Semiconductors Co., Ltd Active Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK Fast Recovery =< 500ns, > 200mA (Io) 600 V Standard 8A 3.4 V @ 8 A 20 µA @ 600 V 18 ns 175°C (Max)
BYC8B-600PQP

DIODE GEN PURP 600V 8A

NXP Semiconductors Active Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK Fast Recovery =< 500ns, > 200mA (Io) 600 V Standard 8A 3.4 V @ 8 A 20 µA @ 600 V 18 ns 175°C (Max)
BYC8D-600,127

DIODE GEN PURP 600V 8A TO220AC

WeEn Semiconductors Co., Ltd Active Through Hole TO-220-2 TO-220AC Fast Recovery =< 500ns, > 200mA (Io) 600 V Standard 8A 2.9 V @ 8 A 40 µA @ 600 V 20 ns 150°C (Max)
BYC8DX-600,127

NOW WEEN - BYC8DX-600 - HYPERFAS

Rochester Electronics Active Through Hole TO-220-2 Full Pack TO-220F Fast Recovery =< 500ns, > 200mA (Io) 600 V Standard 8A 2.9 V @ 8 A 40 µA @ 600 V 20 ns 150°C (Max)
BYC8DX-600,127

DIODE GEN PURP 600V 8A TO220FP

WeEn Semiconductors Co., Ltd Active Through Hole TO-220-2 Full Pack, Isolated Tab TO-220FP Fast Recovery =< 500ns, > 200mA (Io) 600 V Standard 8A 2.9 V @ 8 A 40 µA @ 600 V 20 ns 150°C (Max)
BYC8X-600,127

DIODE GEN PURP 600V 8A TO220FP

WeEn Semiconductors Co., Ltd Active Through Hole TO-220-2 Full Pack, Isolated Tab TO-220FP Fast Recovery =< 500ns, > 200mA (Io) 600 V Standard 8A 2.9 V @ 8 A 150 µA @ 600 V 52 ns 150°C (Max)
BYC8X-600P,127

NOW WEEN - BYC8X-600P - HYPERFAS

Rochester Electronics Active Through Hole TO-220-2 Full Pack TO-220F Fast Recovery =< 500ns, > 200mA (Io) 600 V Standard 8A 1.9 V @ 8 A 20 µA @ 600 V 18 ns 175°C (Max)
BYD13DBULK

DIODE AVALANCHE 200V 1.4A DO41

EIC Semiconductor, Inc. Active Through Hole DO-204AL, DO-41, Axial DO-41 Standard Recovery >500ns, > 200mA (Io) 200 V Avalanche 1.4A 1.05 V @ 1 A 1 µA @ 200 V 175°C
BYD13DGP-E3/54

DIODE GEN PURP 200V 1A DO204AL

Vishay Obsolete Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 200 V Standard 1A 1.1 V @ 1 A 5 µA @ 200 V 884pF @ 1V, 1MHz 3 µs -65°C ~ 175°C
BYD13DGP-E3/73

DIODE GEN PURP 200V 1A DO204AL

Vishay Obsolete Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 200 V Standard 1A 1.1 V @ 1 A 5 µA @ 200 V 8pF @ 4V, 1MHz 3 µs -65°C ~ 175°C
BYD13DGPHE3/54

DIODE GEN PURP 200V 1A DO204AL

Vishay Active Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 200 V Standard 1A 8pF @ 4V, 1MHz -65°C ~ 175°C
BYD13DGPHE3/73

DIODE GEN PURP 200V 1A DO204AL

Vishay Active Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 200 V Standard 1A 5 µA @ 200 V 8pF @ 4V, 1MHz -65°C ~ 175°C
BYD13GBULK

DIODE AVALANCHE 400V 1.4A DO41

EIC Semiconductor, Inc. Active Through Hole DO-204AL, DO-41, Axial DO-41 Standard Recovery >500ns, > 200mA (Io) 400 V Avalanche 1.4A 1.05 V @ 1 A 1 µA @ 400 V 175°C
BYD13GGP-E3/54

DIODE GEN PURP 400V 1A DO204AL

Vishay Obsolete Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 400 V Standard 1A 5 µA @ 200 V 8pF @ 4V, 1MHz 3 µs -65°C ~ 175°C
BYD13GGP-E3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay Obsolete Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 400 V Standard 1A 1.1 V @ 1 A 5 µA @ 200 V 3 µs -65°C ~ 175°C
BYD13GGPHE3/54

DIODE GEN PURP 400V 1A DO204AL

Vishay Active Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 400 V Standard 1A 5 µA @ 200 V 8pF @ 4V, 1MHz -65°C ~ 175°C
BYD13GGPHE3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay Active Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 400 V Standard 1A 1.1 V @ 1 A 5 µA @ 200 V 8pF @ 4V, 1MHz 3 µs -65°C ~ 175°C
BYD13JBULK

DIODE AVALANCHE 600V 1.4A DO41

EIC Semiconductor, Inc. Active Through Hole DO-204AL, DO-41, Axial DO-41 Standard Recovery >500ns, > 200mA (Io) 600 V Avalanche 1.4A 1.05 V @ 1 A 1 µA @ 600 V 175°C
BYD13JGP-E3/54

DIODE GEN PURP 600V 1A DO204AL

Vishay Obsolete Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 600 V Standard 1A 1.1 V @ 1 A 5 µA @ 200 V 8pF @ 4V, 1MHz 3 µs -65°C ~ 175°C
BYD13JGP-E3/73

DIODE GEN PURP 600V 1A DO204AL

Vishay Obsolete Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 600 V Standard 1A 8pF @ 4V, 1MHz -65°C ~ 175°C
BYD13JGPHE3/54

DIODE GEN PURP 600V 1A DO204AL

Vishay Active Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 600 V Standard 1A 1.1 V @ 1 A 5 µA @ 200 V 8pF @ 4V, 1MHz -65°C ~ 175°C
BYD13JGPHE3/73

DIODE GEN PURP 600V 1A DO204AL

Vishay Active Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 600 V Standard 1A 1.1 V @ 1 A 5 µA @ 200 V 8pF @ 1V, 1MHz 3 µs -65°C ~ 175°C
BYD13KBULK

DIODE AVALANCHE 800V 1.4A DO41

EIC Semiconductor, Inc. Active Through Hole DO-204AL, DO-41, Axial DO-41 Standard Recovery >500ns, > 200mA (Io) 800 V Avalanche 1.4A 1.05 V @ 1 A 1 µA @ 800 V 175°C
BYD13KGP-E3/54

DIODE GEN PURP 800V 1A DO204AL

Vishay Obsolete Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 800 V Standard 1A 5 µA @ 200 V 8pF @ 4V, 1MHz 3 µs -65°C ~ 175°C
BYD13KGP-E3/73

DIODE GEN PURP 800V 1A DO204AL

Vishay Obsolete Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Standard Recovery >500ns, > 200mA (Io) 800 V Standard 1A 1.1 V @ 1 A 5 µA @ 200 V 8pF @ 4V, 1MHz 3 µs -65°C ~ 175°C

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