Diyotlar - Doğrultucular - Tekil
- Komponent
- 49,938
- Marka
- 57
Komponentler
10,000 sonuç · Sayfa 181/200| Parça No | Üretici | Part Status | Mounting Type | Package / Case | Supplier Device Package | Speed | Voltage - DC Reverse (Vr) (Max) | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Operating Temperature - Junction | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BY253GP-E3/73
DIODE GEN PURPOSE DO201AD |
Vishay | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | ✓ |
|
BY253GPHE3/54
DIODE GEN PURP 600V 3A DO201AD |
Vishay | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 600 V | 40pF @ 4V, 1MHz | 3 µs | -65°C ~ 175°C | ✓ |
|
BY253P-E3/54
DIODE GEN PURP 600V 3A DO201AD |
Vishay | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 600 V | 40pF @ 4V, 1MHz | 3 µs | -55°C ~ 150°C | — |
|
BY253P-E3/73
DIODE GEN PURP 600V 3A DO201AD |
Vishay | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 600 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 600 V | 40pF @ 4V, 1MHz | 3 µs | -55°C ~ 150°C | ✓ |
|
BY254
DIODE STD DO-201 800V 3A |
Diotec Semiconductor | Active | Through Hole | DO-201AA, DO-27, Axial | DO-201 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 800 V | — | 1.5 µs | -50°C ~ 150°C | — |
|
BY254
ST Rect, 800V, 3A |
DComponents | Active | Through Hole | DO-201AA, DO-27, Axial | DO-201 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 800 V | — | 1.5 µs | -50°C ~ 150°C | ✓ |
|
BY254-CT
CUT-TAPE VERSION. STANDARD RECO |
DComponents | Active | Through Hole | DO-201AA, DO-27, Axial | DO-201 | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 800 V | — | 1.5 µs | -50°C ~ 150°C | ✓ |
|
BY254GP-E3/54
DIODE GEN PURP 800V 3A DO201AD |
Vishay | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 800 V | 40pF @ 4V, 1MHz | 3 µs | -65°C ~ 175°C | ✓ |
|
BY254GP-E3/73
DIODE GEN PURPOSE DO201AD |
Vishay | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | ✓ |
|
BY254GPHE3/54
DIODE GEN PURP 800V 3A DO201AD |
Vishay | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 800 V | 40pF @ 4V, 1MHz | 3 µs | -65°C ~ 175°C | ✓ |
|
BY254P-E3/54
DIODE GEN PURP 800V 3A DO201AD |
Vishay | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 800 V | 40pF @ 4V, 1MHz | 3 µs | -55°C ~ 150°C | — |
|
BY254P-E3/73
DIODE GEN PURP 800V 3A DO201AD |
Vishay | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 800 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 800 V | 40pF @ 4V, 1MHz | 3 µs | -55°C ~ 150°C | ✓ |
|
BY255
DIODE GEN PURP 1300V 3A DO201AD |
Diotec Semiconductor | Active | Through Hole | DO-201AA, DO-27, Axial | DO-201 | Standard Recovery >500ns, > 200mA (Io) | 1300 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 1300 V | — | 1.5 µs | -50°C ~ 150°C | — |
|
BY255
STD 3A, CASE TYPE: DO-201AD |
EIC Semiconductor, Inc. | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1300 V | Standard | 3A (DC) | 1.1 V @ 3 A | 20 µA @ 1300 V | 50pF @ 4V, 1MHz | — | -65°C ~ 175°C | ✓ |
|
BY255
Std Rect, 1300V, 3A |
DComponents | Active | Through Hole | DO-201AA, DO-27, Axial | DO-201 | Standard Recovery >500ns, > 200mA (Io) | 1300 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 1300 V | — | 1.5 µs | -50°C ~ 150°C | ✓ |
|
BY255-AQ
DIODE STD DO-201 1300V 3A |
Diotec Semiconductor | Active | Through Hole | DO-201AA, DO-27, Axial | DO-201 | Standard Recovery >500ns, > 200mA (Io) | 1300 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 1300 V | — | 1.5 µs | -50°C ~ 150°C | ✓ |
|
BY255-AQ
ST Rect, 1300V, 3A |
DComponents | Active | Through Hole | DO-201AA, DO-27, Axial | DO-201 | Standard Recovery >500ns, > 200mA (Io) | 1300 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 1300 V | — | 1.5 µs | -50°C ~ 150°C | ✓ |
|
BY255-AQ-CT
CUT-TAPE VERSION. STANDARD RECO |
DComponents | Active | Through Hole | DO-201AA, DO-27, Axial | DO-201 | Standard Recovery >500ns, > 200mA (Io) | 1300 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 1300 V | — | 1.5 µs | -50°C ~ 150°C | ✓ |
|
BY255-CT
CUT-TAPE VERSION. STANDARD RECO |
DComponents | Active | Through Hole | DO-201AA, DO-27, Axial | DO-201 | Standard Recovery >500ns, > 200mA (Io) | 1300 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 1300 V | — | 1.5 µs | -50°C ~ 150°C | ✓ |
|
BY255GP-E3/54
DIODE GEN PURP 1.3KV 3A DO201AD |
Vishay | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1300 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 1300 V | 40pF @ 4V, 1MHz | 3 µs | -65°C ~ 175°C | ✓ |
|
BY255GP-E3/73
DIODE GEN PURP 1.3KV 3A DO201AD |
Vishay | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1300 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 1300 V | 40pF @ 4V, 1MHz | 3 µs | -65°C ~ 175°C | ✓ |
|
BY255GPHE3/54
DIODE GEN PURP 1.3KV 3A DO201AD |
Vishay | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1300 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 1300 V | 40pF @ 4V, 1MHz | 3 µs | -65°C ~ 175°C | ✓ |
|
BY255GPHE3/73
DIODE GEN PURP 1.3KV 3A DO201AD |
Vishay | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1300 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 1300 V | 40pF @ 4V, 1MHz | 3 µs | -65°C ~ 175°C | ✓ |
|
BY255P-E3/54
DIODE GEN PURP 1.3KV 3A DO201AD |
Vishay | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1300 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 1300 V | 40pF @ 4V, 1MHz | 3 µs | -55°C ~ 150°C | ✓ |
|
BY255P-E3/73
DIODE GEN PURP 1.3KV 3A DO201AD |
Vishay | Active | Through Hole | DO-201AD, Axial | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 1300 V | Standard | 3A | 1.1 V @ 3 A | 5 µA @ 1300 V | 40pF @ 4V, 1MHz | 3 µs | -55°C ~ 150°C | — |
|
BY268TAP
DIODE GEN PURP 1.4KV 800MA SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 1400 V | Standard | 800mA | 1.25 V @ 400 mA | 2 µA @ 1400 V | — | 400 ns | -55°C ~ 150°C | ✓ |
|
BY268TR
DIODE GEN PURP 1.4KV 800MA SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 1400 V | Standard | 800mA | 1.25 V @ 400 mA | 2 µA @ 1400 V | — | 400 ns | -55°C ~ 150°C | ✓ |
|
BY269TAP
DIODE AVALANCHE 1.6KV 2A SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Standard Recovery >500ns, > 200mA (Io) | 1600 V | Avalanche | 2A | 1.6 V @ 3 A | 2 µA @ 1400 V | — | 2 µs | 140°C (Max) | ✓ |
|
BY269TR
DIODE AVALANCH 1.6KV 800MA SOD57 |
Vishay | Active | Through Hole | SOD-57, Axial | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 1600 V | Avalanche | 800mA | 1.25 V @ 400 mA | 2 µA @ 1600 V | — | 400 ns | -55°C ~ 175°C | ✓ |
|
BY296
DIODE FR DO-201 100V 2A |
Diotec Semiconductor | Active | Through Hole | DO-201AA, DO-27, Axial | DO-201 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | Standard | 2A | 1.3 V @ 3 A | 5 µA @ 100 V | — | 500 ns | -50°C ~ 150°C | — |
|
BY296
Fast Rect. 100V, 2.00A, 500ns |
DComponents | Active | — | — | — | — | 100 V | Standard | 2A | — | — | — | 500 ns | — | ✓ |
|
BY297
DIODE FR DO-201 200V 2A |
Diotec Semiconductor | Active | Through Hole | DO-201AA, DO-27, Axial | DO-201 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 2A | 1.3 V @ 3 A | 5 µA @ 200 V | — | 500 ns | -50°C ~ 150°C | — |
|
BY297
Fast Rect. 200V, 2.00A, 500ns |
DComponents | Active | — | — | — | — | 200 V | Standard | 2A | — | — | — | 500 ns | — | ✓ |
|
BY297P-E3/54
DIODE GEN PURP 200V 2A DO201AD |
Vishay | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | Standard | 2A | 1.3 V @ 3 A | 10 µA @ 200 V | 28pF @ 4V, 1MHz | 500 ns | -50°C ~ 125°C | ✓ |
|
BY298
DIODE FR DO-201 400V 2A |
Diotec Semiconductor | Active | Through Hole | DO-201AA, DO-27, Axial | DO-201 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 2A | 1.3 V @ 3 A | 5 µA @ 400 V | — | 500 ns | -50°C ~ 150°C | — |
|
BY298
Fast Rect. 400V, 2.00A, 500ns |
DComponents | Active | — | — | — | — | 400 V | Standard | 2A | — | — | — | 500 ns | — | ✓ |
|
BY298P-E3/54
DIODE GEN PURP 400V 2A DO201AD |
Vishay | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | Standard | 2A | 1.3 V @ 3 A | 10 µA @ 400 V | 28pF @ 4V, 1MHz | 500 ns | -50°C ~ 125°C | ✓ |
|
BY299
DIODE FR DO-201 800V 2A |
Diotec Semiconductor | Active | Through Hole | DO-201AA, DO-27, Axial | DO-201 | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Standard | 2A | 1.3 V @ 3 A | 5 µA @ 800 V | — | 500 ns | -50°C ~ 150°C | — |
|
BY299
Fast Rect. 800V, 2.00A, 500ns |
DComponents | Active | — | — | — | — | 800 V | Standard | 2A | — | — | — | 500 ns | — | ✓ |
|
BY299BULK
DIODE GEN PURP 800V 2A DO15 |
EIC Semiconductor, Inc. | Active | Through Hole | DO-204AC, DO-15, Axial | DO-15 | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Standard | 2A | 1.3 V @ 2 A | 10 µA @ 800 V | 28pF @ 4V, 1MHz | 250 ns | -50°C ~ 125°C | ✓ |
|
BY299P-E3/54
DIODE GEN PURP 800V 2A DO201AD |
Vishay | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Standard | 2A | 1.3 V @ 3 A | 10 µA @ 800 V | 28pF @ 4V, 1MHz | 500 ns | -50°C ~ 125°C | ✓ |
|
BY299P-E3/73
DIODE GEN PURP 800V 2A DO201AD |
Vishay | Obsolete | Through Hole | DO-201AD, Axial | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | Standard | 2A | 1.3 V @ 3 A | 10 µA @ 800 V | 28pF @ 4V, 1MHz | 500 ns | -50°C ~ 125°C | ✓ |
|
BY329-1000,127
DIODE GEN PURP 1KV 8A TO220AC |
NXP Semiconductors | Obsolete | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | Standard | 8A | 1.85 V @ 20 A | 1 mA @ 800 V | — | 135 ns | 150°C (Max) | ✓ |
|
BY329-1200,127
DIODE GEN PURP 1.2KV 8A TO220AC |
NXP Semiconductors | Obsolete | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 1200 V | Standard | 8A | 1.85 V @ 20 A | 1 mA @ 1000 V | — | 135 ns | 150°C (Max) | ✓ |
|
BY329-1500S,127
DIODE GEN PURP 1.5KV 6A TO220AC |
NXP Semiconductors | Obsolete | Through Hole | TO-220-2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 1500 V | Standard | 6A (DC) | 1.6 V @ 6.5 A | 250 µA @ 1300 V | — | 160 ns | 150°C (Max) | — |
|
BY329X-1200,127
DIODE GEN PURP 1.2KV 8A TO220F |
NXP Semiconductors | Obsolete | Through Hole | TO-220-2 Full Pack | TO-220FP | Fast Recovery =< 500ns, > 200mA (Io) | 1200 V | Standard | 8A | 1.85 V @ 20 A | 1 mA @ 1000 V | — | 145 ns | 150°C (Max) | — |
|
BY329X-1500,127
DIODE GEN PURP 1.5KV 6A TO220F |
NXP Semiconductors | Obsolete | Through Hole | TO-220-2 Full Pack | TO-220FP | Fast Recovery =< 500ns, > 200mA (Io) | 1500 V | Standard | 6A (DC) | 1.45 V @ 6.5 A | — | — | 230 ns | 150°C (Max) | ✓ |
|
BY329X-1500S,127
DIODE GEN PURP 1.5KV 6A TO220F |
NXP Semiconductors | Obsolete | Through Hole | TO-220-2 Full Pack | TO-220FP | Fast Recovery =< 500ns, > 200mA (Io) | 1500 V | Standard | 6A (DC) | 1.6 V @ 6.5 A | 250 µA @ 1300 V | — | 160 ns | 150°C (Max) | ✓ |
|
BY359-1500,127
DIODE GEN PURP 1.5KV 10A TO220AC |
NXP Semiconductors | Obsolete | Through Hole | TO-220-2 | TO-220AC | Standard Recovery >500ns, > 200mA (Io) | 1500 V | Standard | 10A (DC) | 1.8 V @ 20 A | 100 µA @ 1300 V | — | 600 ns | 150°C (Max) | — |
|
BY359X-1500,127
DIODE GEN PURP 1.5KV 10A TO220F |
NXP Semiconductors | Obsolete | Through Hole | TO-220-2 Full Pack | TO-220FP | Standard Recovery >500ns, > 200mA (Io) | 1500 V | Standard | 10A (DC) | 1.8 V @ 20 A | 100 µA @ 1300 V | — | 600 ns | 150°C (Max) | ✓ |