PMIC - Kapı Sürücüleri
- Komponent
- 6,680
- Marka
- 32
Komponentler
6,680 sonuç · Sayfa 32/134| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Input Type | Supplier Device Package | Voltage - Supply | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IR2113SPBF
IC GATE DRVR HALF-BRIDGE 16SOIC |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SOIC | 3.3V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2A, 2A | 600 V | 25ns, 17ns | — |
|
IR2113STR
IC GATE DRVR HALF-BRIDGE 16SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SOIC | 3.3V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2A, 2A | 600 V | 25ns, 17ns | — |
|
IR2113STRPBF
IC GATE DRVR HALF-BRIDGE 16SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SOIC | 3.3V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2A, 2A | 600 V | 25ns, 17ns | — |
|
IR21141SSPBF
IC GATE DRVR HALF-BRIDGE 24SSOP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 24-SSOP | 11.5V ~ 20V | Independent | Half-Bridge | 2 | IGBT | 0.8V, 2V | 2A, 3A | 600 V | 24ns, 7ns | — |
|
IR21141SSTRPBF
IC GATE DRVR HALF-BRIDGE 24SSOP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 24-SSOP | 11.5V ~ 20V | Independent | Half-Bridge | 2 | IGBT | 0.8V, 2V | 2A, 3A | 600 V | 24ns, 7ns | — |
|
IR2114SS
IC GATE DRVR HALF-BRIDGE 24SSOP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 24-SSOP | 11.5V ~ 20V | Independent | Half-Bridge | 2 | IGBT | 0.8V, 2V | 2A, 3A | 600 V | 24ns, 7ns | — |
|
IR2114SSPBF
IC GATE DRVR HALF-BRIDGE 24SSOP |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 24-SSOP | 11.5V ~ 20V | Independent | Half-Bridge | 2 | IGBT | 0.8V, 2V | 2A, 3A | 600 V | 24ns, 7ns | — |
|
IR2114SSTRPBF
IR2114SS - GATE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 24-SSOP | 11.5V ~ 20V | Independent | Half-Bridge | 2 | IGBT | 0.8V, 2V | 2A, 3A | 600 V | 24ns, 7ns | — |
|
IR2114SSTRPBF
IC GATE DRVR HALF-BRIDGE 24SSOP |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 24-SSOP | 11.5V ~ 20V | Independent | Half-Bridge | 2 | IGBT | 0.8V, 2V | 2A, 3A | 600 V | 24ns, 7ns | — |
|
IR2117
IC GATE DRVR HIGH-SIDE 8DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2117PBF
IC GATE DRVR HIGH-SIDE 8DIP |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2117SPBF
IC GATE DRVR HIGH-SIDE 8SOIC |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2117STR
IC GATE DRVR HIGH-SIDE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2117STRPBF
IC GATE DRVR HIGH-SIDE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2118
IC GATE DRVR HIGH-SIDE 8DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting | 8-PDIP | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2118PBF
IC GATE DRVR HIGH-SIDE 8DIP |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting | 8-PDIP | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2118PBF
IR2118 - GATE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting | 8-PDIP | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2118SPBF
IC GATE DRVR HIGH-SIDE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2118STR
IC GATE DRVR HIGH-SIDE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2118STRPBF
IC GATE DRVR HIGH-SIDE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 10V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2121
IC GATE DRVR LOW-SIDE 8DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 12V ~ 18V | Single | Low-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.2V | 1.6A, 3.3A | — | 43ns, 26ns | — |
|
IR2121PBF
IC GATE DRVR LOW-SIDE 8DIP |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 12V ~ 18V | Single | Low-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.2V | 1.6A, 3.3A | — | 43ns, 26ns | — |
|
IR2122
IC GATE DRVR HIGH-SIDE 8DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting | 8-PDIP | 13V ~ 20V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 3V | 130mA, 130mA | 600 V | 250ns, 250ns | — |
|
IR2125
IC GATE DRVR HIGH-SIDE 8DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 0V ~ 18V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.2V | 1.6A, 3.3A | 500 V | 43ns, 26ns | — |
|
IR2125PBF
IC GATE DRVR HIGH-SIDE 8DIP |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 0V ~ 18V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.2V | 1.6A, 3.3A | 500 V | 43ns, 26ns | — |
|
IR2125S
IC GATE DRVR HIGH-SIDE 16SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SOIC | 0V ~ 18V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.2V | 1.6A, 3.3A | 500 V | 43ns, 26ns | — |
|
IR2125SPBF
IC GATE DRVR HIGH-SIDE 16SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SOIC | 0V ~ 18V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.2V | 1.6A, 3.3A | 500 V | 43ns, 26ns | — |
|
IR2125STR
IC GATE DRVR HIGH-SIDE 16SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SOIC | 0V ~ 18V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.2V | 1.6A, 3.3A | 500 V | 43ns, 26ns | — |
|
IR2125STRPBF
IC GATE DRVR HIGH-SIDE 16SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SOIC | 0V ~ 18V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 2.2V | 1.6A, 3.3A | 500 V | 43ns, 26ns | — |
|
IR2127
IC GATE DRV HI-SIDE/LO-SIDE 8DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 12V ~ 20V | Single | High-Side or Low-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 3V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR21271
IC GATE DRV HI-SIDE/LO-SIDE 8DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 9V ~ 20V | Single | High-Side or Low-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 3V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR21271PBF
IR21271 - GATE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 9V ~ 20V | Single | High-Side or Low-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 3V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR21271PBF
IC GATE DRV HI-SIDE/LO-SIDE 8DIP |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 9V ~ 20V | Single | High-Side or Low-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 3V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR21271S
IC GATE DRVR HI/LOW SIDE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 9V ~ 20V | Single | High-Side or Low-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 3V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR21271SPBF
IC GATE DRVR HI/LOW SIDE 8SOIC |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 9V ~ 20V | Single | High-Side or Low-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 3V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR21271STR
IC GATE DRVR HI/LOW SIDE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 9V ~ 20V | Single | High-Side or Low-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 3V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR21271STRPBF
IC GATE DRVR HI/LOW SIDE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 9V ~ 20V | Single | High-Side or Low-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 3V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2127PBF
IR2127 - GATE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 12V ~ 20V | Single | High-Side or Low-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 3V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2127PBF
IC GATE DRV HI-SIDE/LO-SIDE 8DIP |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 12V ~ 20V | Single | High-Side or Low-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 3V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2127SPBF
IC GATE DRVR HI/LOW SIDE 8SOIC |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 12V ~ 20V | Single | High-Side or Low-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 3V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2127STR
IC GATE DRVR HI/LOW SIDE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 12V ~ 20V | Single | High-Side or Low-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 3V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2127STRPBF
IC GATE DRVR HI/LOW SIDE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 12V ~ 20V | Single | High-Side or Low-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 3V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2127STRPBF
IR2127S - GATE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 12V ~ 20V | Single | High-Side or Low-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 3V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2128
IC GATE DRV HI-SIDE/LO-SIDE 8DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting | 8-PDIP | 12V ~ 20V | Single | High-Side or Low-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 3V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2128PBF
IC GATE DRV HI-SIDE/LO-SIDE 8DIP |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting | 8-PDIP | 12V ~ 20V | Single | High-Side or Low-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 3V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2128S
IC GATE DRVR HI/LOW SIDE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 12V ~ 20V | Single | High-Side or Low-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 3V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2128SPBF
IC GATE DRVR HI/LOW SIDE 8SOIC |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 12V ~ 20V | Single | High-Side or Low-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 3V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2128STR
IC GATE DRVR HI/LOW SIDE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 12V ~ 20V | Single | High-Side or Low-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 3V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2128STRPBF
IC GATE DRVR HI/LOW SIDE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 12V ~ 20V | Single | High-Side or Low-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 3V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2130
IC GATE DRVR HALF-BRIDGE 28DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting | 28-PDIP | 10V ~ 20V | 3-Phase | Half-Bridge | 6 | IGBT, N-Channel MOSFET | 0.8V, 2.2V | 250mA, 500mA | 600 V | 80ns, 35ns | — |