PMIC - Kapı Sürücüleri
- Komponent
- 6,680
- Marka
- 32
Komponentler
6,680 sonuç · Sayfa 31/134| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Input Type | Supplier Device Package | Voltage - Supply | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IR21091PBF
IR21091 - HALF-BRIDGE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.9V | 200mA, 350mA | 600 V | 150ns, 50ns | — |
|
IR21091PBF
IC GATE DRVR HALF-BRIDGE 8DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.9V | 200mA, 350mA | 600 V | 150ns, 50ns | — |
|
IR21091SPBF
IR21091S - HALF-BRIDGE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.9V | 200mA, 350mA | 600 V | 150ns, 50ns | — |
|
IR21091SPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.9V | 200mA, 350mA | 600 V | 150ns, 50ns | — |
|
IR21091STRPBF
IR21091S - GATE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.9V | 200mA, 350mA | 600 V | 150ns, 50ns | — |
|
IR21091STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.9V | 200mA, 350mA | 600 V | 150ns, 50ns | — |
|
IR21094
IC GATE DRVR HALF-BRIDGE 14DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 14-DIP | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.9V | 200mA, 350mA | 600 V | 150ns, 50ns | — |
|
IR21094PBF
IC GATE DRVR HALF-BRIDGE 14DIP |
Rochester Electronics | Not For New Designs | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 14-DIP | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.9V | 200mA, 350mA | 600 V | 150ns, 50ns | — |
|
IR21094S
IC GATE DRVR HALF-BRIDGE 14SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 14-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.9V | 200mA, 350mA | 600 V | 150ns, 50ns | — |
|
IR21094SPBF
IC GATE DRVR HALF-BRIDGE 14SOIC |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 14-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.9V | 200mA, 350mA | 600 V | 150ns, 50ns | — |
|
IR21094STRPBF
IC GATE DRVR HALF-BRIDGE 14SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 14-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.9V | 200mA, 350mA | 600 V | 150ns, 50ns | — |
|
IR2109PBF
IC GATE DRVR HALF-BRIDGE 8DIP |
Infineon Technologies | Not For New Designs | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.9V | 200mA, 350mA | 600 V | 150ns, 50ns | — |
|
IR2109S
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.9V | 200mA, 350mA | 600 V | 150ns, 50ns | — |
|
IR2109SPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.9V | 200mA, 350mA | 600 V | 150ns, 50ns | — |
|
IR2109STR
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.9V | 200mA, 350mA | 600 V | 150ns, 50ns | — |
|
IR2109STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.9V | 200mA, 350mA | 600 V | 150ns, 50ns | — |
|
IR2109STRPBF
IR2109S - GATE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.9V | 200mA, 350mA | 600 V | 150ns, 50ns | — |
|
IR2110
IC GATE DRVR HALF-BRIDGE 14DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 14-DIP | 3.3V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2A, 2A | 500 V | 25ns, 17ns | — |
|
IR2110-1
IC GATE DRVR HALF-BRIDGE 14DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 14-PDIP | 3.3V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2A, 2A | 500 V | 25ns, 17ns | — |
|
IR2110-1PBF
IC GATE DRVR HALF-BRIDGE 14DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 14-PDIP | 3.3V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2A, 2A | 500 V | 25ns, 17ns | — |
|
IR2110-2
IC GATE DRVR HALF-BRIDGE 16DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 16-PDIP | 3.3V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2A, 2A | 500 V | 25ns, 17ns | — |
|
IR2110-2PBF
IC GATE DRVR HALF-BRIDGE 16DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 16-PDIP | 3.3V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2A, 2A | 500 V | 25ns, 17ns | — |
|
IR2110CX6SA1
IC GATE DRIVER |
Infineon Technologies | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
IR2110PBF
IC GATE DRVR HALF-BRIDGE 14DIP |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 14-DIP | 3.3V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2A, 2A | 500 V | 25ns, 17ns | — |
|
IR2110S
IC GATE DRVR HALF-BRIDGE 16SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SOIC | 3.3V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2A, 2A | 500 V | 25ns, 17ns | — |
|
IR2110SPBF
IC GATE DRVR HALF-BRIDGE 16SOIC |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SOIC | 3.3V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2A, 2A | 500 V | 25ns, 17ns | — |
|
IR2110STR
IC GATE DRVR HALF-BRIDGE 16SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SOIC | 3.3V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2A, 2A | 500 V | 25ns, 17ns | — |
|
IR2110STRPBF
IC GATE DRVR HALF-BRIDGE 16SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SOIC | 3.3V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2A, 2A | 500 V | 25ns, 17ns | — |
|
IR2111
IC GATE DRVR HALF-BRIDGE 8DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 8.3V, 12.6V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2111PBF
IC GATE DRVR HALF-BRIDGE 8DIP |
Infineon Technologies | Not For New Designs | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 8.3V, 12.6V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2111S
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 8.3V, 12.6V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2111SPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 8.3V, 12.6V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2111STR
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 8.3V, 12.6V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2111STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 8.3V, 12.6V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2112
IC GATE DRVR HI/LOW SIDE 14DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 14-DIP | 10V ~ 20V | Independent | High-Side or Low-Side | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2112-1
IC GATE DRVR HI/LOW SIDE 14DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 14-PDIP | 10V ~ 20V | Independent | High-Side or Low-Side | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2112-1PBF
IC GATE DRVR HI/LOW SIDE 14DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 14-PDIP | 10V ~ 20V | Independent | High-Side or Low-Side | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2112-2
IC GATE DRVR HI/LOW SIDE 16DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 16-PDIP | 10V ~ 20V | Independent | High-Side or Low-Side | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2112-2PBF
IC GATE DRVR HI/LOW SIDE 16DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 16-PDIP | 10V ~ 20V | Independent | High-Side or Low-Side | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2112PBF
IC GATE DRVR HI/LOW SIDE 14DIP |
Infineon Technologies | Not For New Designs | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 14-DIP | 10V ~ 20V | Independent | High-Side or Low-Side | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2112S
IC GATE DRVR HI/LOW SIDE 16SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SOIC | 10V ~ 20V | Independent | High-Side or Low-Side | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2112SPBF
IC GATE DRVR HI/LOW SIDE 16SOIC |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SOIC | 10V ~ 20V | Independent | High-Side or Low-Side | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2112STR
IC GATE DRVR HI/LOW SIDE 16SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SOIC | 10V ~ 20V | Independent | High-Side or Low-Side | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2112STRPBF
IC GATE DRVR HI/LOW SIDE 16SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SOIC | 10V ~ 20V | Independent | High-Side or Low-Side | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
IR2113
IC GATE DRVR HALF-BRIDGE 14DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 14-DIP | 3.3V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2A, 2A | 600 V | 25ns, 17ns | — |
|
IR2113-1
IC GATE DRVR HALF-BRIDGE 14DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 14-PDIP | 3.3V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2A, 2A | 600 V | 25ns, 17ns | — |
|
IR2113-1PBF
IC GATE DRVR HALF-BRIDGE 14DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 14-PDIP | 3.3V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2A, 2A | 600 V | 25ns, 17ns | — |
|
IR2113-2
IC GATE DRVR HALF-BRIDGE 16DIP |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 16-PDIP | 3.3V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2A, 2A | 600 V | 25ns, 17ns | — |
|
IR2113C
IC GATE DRIVER |
Infineon Technologies | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
IR2113PBF
IC GATE DRVR HALF-BRIDGE 14DIP |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 14-DIP | 3.3V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 6V, 9.5V | 2A, 2A | 600 V | 25ns, 17ns | — |