Diyotlar - Doğrultucular - Diziler
GD2X100MPS06N
650V 200A SOT-227 SIC SCHOTTKY M
- Üretici
- GeneSiC Semiconductor
- Paket
- SOT-227-4
- Kategori
- Diyotlar - Doğrultucular - Diziler
Teknik Özellikler
| Parametre | Değer |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 108A (DC) |
| Current - Reverse Leakage @ Vr | 5 µA @ 650 V |
| Diode Configuration | 2 Independent |
| Diode Type | Silicon Carbide Schottky |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Package / Case | SOT-227-4, miniBLOC |
| Part Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time > 500mA (Io) |
| Supplier Device Package | SOT-227 |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 100 A |