PMIC - Kapı Sürücüleri
- Komponent
- 6,680
- Marka
- 32
Komponentler
6,680 sonuç · Sayfa 93/134| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Input Type | Supplier Device Package | Voltage - Supply | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MCP14E3-E/SL
IC GATE DRVR LOW-SIDE 8SOIC |
Microchip Technology | Active | — | Surface Mount | — | Inverting | 8-SOIC | 4.5V ~ 18V | — | Low-Side | 2 | — | — | — | — | — | — |
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MCP14E3-E/SN
IC GATE DRVR LOW-SIDE 8SOIC |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 4A, 4A | — | 15ns, 18ns | — |
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MCP14E3T-E/MF
IC GATE DRVR LOW-SIDE 8DFN |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | Inverting | 8-DFN-S (6x5) | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 4A, 4A | — | 15ns, 18ns | — |
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MCP14E3T-E/SL
IC GATE DRVR LOW-SIDE 8SOIC |
Microchip Technology | Active | — | Surface Mount | — | Inverting | 8-SOIC | 4.5V ~ 18V | — | Low-Side | 2 | — | — | — | — | — | — |
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MCP14E3T-E/SN
IC GATE DRVR LOW-SIDE 8SOIC |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 4A, 4A | — | 15ns, 18ns | — |
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MCP14E4-E/MF
IC GATE DRVR LOW-SIDE 8DFN |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | Non-Inverting | 8-DFN-S (6x5) | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 4A, 4A | — | 15ns, 18ns | — |
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MCP14E4-E/P
IC GATE DRVR LOW-SIDE 8DIP |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 4A, 4A | — | 15ns, 18ns | — |
|
MCP14E4-E/SL
IC GATE DRVR LOW-SIDE 16SOIC |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SOIC | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 4A, 4A | — | 15ns, 18ns | — |
|
MCP14E4-E/SN
IC GATE DRVR LOW-SIDE 8SOIC |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 4A, 4A | — | 15ns, 18ns | — |
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MCP14E4T-E/MF
IC GATE DRVR LOW-SIDE 8DFN |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | Non-Inverting | 8-DFN-S (6x5) | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 4A, 4A | — | 15ns, 18ns | — |
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MCP14E4T-E/SL
IC GATE DRVR LOW-SIDE 16SOIC |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SOIC | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 4A, 4A | — | 15ns, 18ns | — |
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MCP14E4T-E/SN
IC GATE DRVR LOW-SIDE 8SOIC |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 4A, 4A | — | 15ns, 18ns | — |
|
MCP14E4T-E/SNVAO
IC GATE DRVR LOW-SIDE 8SOIC |
Microchip Technology | Active | -40°C ~ 125°C (TA) | Surface Mount | — | Non-Inverting | 8-SOIC | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 4A, 4A | — | 15ns, 18ns | — |
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MCP14E5-E/MF
IC GATE DRVR LOW-SIDE 8DFN |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | Inverting, Non-Inverting | 8-DFN-S (6x5) | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 4A, 4A | — | 15ns, 18ns | — |
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MCP14E5-E/P
IC GATE DRVR LOW-SIDE 8DIP |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting, Non-Inverting | 8-PDIP | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 4A, 4A | — | 15ns, 18ns | — |
|
MCP14E5-E/SL
IC GATE DRVR LOW-SIDE 16SOIC |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting, Non-Inverting | 16-SOIC | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 4A, 4A | — | 15ns, 18ns | — |
|
MCP14E5-E/SN
IC GATE DRVR LOW-SIDE 8SOIC |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting, Non-Inverting | 8-SOIC | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 4A, 4A | — | 15ns, 18ns | — |
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MCP14E5T-E/MF
IC GATE DRVR LOW-SIDE 8DFN |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | Inverting, Non-Inverting | 8-DFN-S (6x5) | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 4A, 4A | — | 15ns, 18ns | — |
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MCP14E5T-E/SL
IC GATE DRVR LOW-SIDE 16SOIC |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting, Non-Inverting | 16-SOIC | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 4A, 4A | — | 15ns, 18ns | — |
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MCP14E5T-E/SN
IC GATE DRVR LOW-SIDE 8SOIC |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting, Non-Inverting | 8-SOIC | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 4A, 4A | — | 15ns, 18ns | — |
|
MCP14E6-E/MF
IC GATE DRVR LOW-SIDE 8DFN |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | Inverting | 8-DFN-S (6x5) | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 2A, 2A | — | 12ns, 15ns | — |
|
MCP14E6-E/P
IC GATE DRVR LOW-SIDE 8DIP |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting | 8-PDIP | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 2A, 2A | — | 12ns, 15ns | — |
|
MCP14E6-E/SN
IC GATE DRVR LOW-SIDE 8SOIC |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 2A, 2A | — | 12ns, 15ns | — |
|
MCP14E6T-E/MF
IC GATE DRVR LOW-SIDE 8DFN |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | Inverting | 8-DFN-S (6x5) | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 2A, 2A | — | 12ns, 15ns | — |
|
MCP14E6T-E/SN
IC GATE DRVR LOW-SIDE 8SOIC |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 2A, 2A | — | 12ns, 15ns | — |
|
MCP14E7-E/MF
IC GATE DRVR LOW-SIDE 8DFN |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | Non-Inverting | 8-DFN-S (6x5) | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 2A, 2A | — | 12ns, 15ns | — |
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MCP14E7-E/P
IC GATE DRVR LOW-SIDE 8DIP |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 2A, 2A | — | 12ns, 15ns | — |
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MCP14E7-E/SN
IC GATE DRVR LOW-SIDE 8SOIC |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 2A, 2A | — | 12ns, 15ns | — |
|
MCP14E7T-E/MF
IC GATE DRVR LOW-SIDE 8DFN |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | Non-Inverting | 8-DFN-S (6x5) | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 2A, 2A | — | 12ns, 15ns | — |
|
MCP14E7T-E/SN
IC GATE DRVR LOW-SIDE 8SOIC |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 2A, 2A | — | 12ns, 15ns | — |
|
MCP14E8-E/MF
IC GATE DRVR LOW-SIDE 8DFN |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | Inverting, Non-Inverting | 8-DFN-S (6x5) | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 2A, 2A | — | 12ns, 15ns | — |
|
MCP14E8-E/P
IC GATE DRVR LOW-SIDE 8DIP |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting, Non-Inverting | 8-PDIP | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 2A, 2A | — | 12ns, 15ns | — |
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MCP14E8-E/SN
IC GATE DRVR LOW-SIDE 8SOIC |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting, Non-Inverting | 8-SOIC | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 2A, 2A | — | 12ns, 15ns | — |
|
MCP14E8T-E/MF
IC GATE DRVR LOW-SIDE 8DFN |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | Inverting, Non-Inverting | 8-DFN-S (6x5) | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 2A, 2A | — | 12ns, 15ns | — |
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MCP14E8T-E/SN
IC GATE DRVR LOW-SIDE 8SOIC |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting, Non-Inverting | 8-SOIC | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 2A, 2A | — | 12ns, 15ns | — |
|
MCP14E9-E/MF
IC GATE DRVR LOW-SIDE 8DFN |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | Inverting | 8-DFN-S (6x5) | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 3A, 3A | — | 14ns, 17ns | — |
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MCP14E9-E/P
IC GATE DRVR LOW-SIDE 8DIP |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting | 8-PDIP | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 3A, 3A | — | 14ns, 17ns | — |
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MCP14E9-E/SN
IC GATE DRVR LOW-SIDE 8SOIC |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 3A, 3A | — | 14ns, 17ns | — |
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MCP14E9T-E/MF
IC GATE DRVR LOW-SIDE 8DFN |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | Inverting | 8-DFN-S (6x5) | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 3A, 3A | — | 14ns, 17ns | — |
|
MCP14E9T-E/SN
IC GATE DRVR LOW-SIDE 8SOIC |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 4.5V ~ 18V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 3A, 3A | — | 14ns, 17ns | — |
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MCZ33198EF
IC GATE DRVR HIGH-SIDE 8SOIC |
NXP Semiconductors | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 7V ~ 20V | Single | High-Side | 1 | N-Channel MOSFET | 1.5V, 3.5V | — | — | 10µs, 280µs | — |
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MCZ33198EFR2
BUFFER/INVERTER BASED MOSFET DRI |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 7V ~ 20V | Single | High-Side | 1 | N-Channel MOSFET | 1.5V, 3.5V | — | — | 10µs, 280µs | — |
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MCZ33198EFR2
IC GATE DRVR HIGH-SIDE 8SOIC |
NXP Semiconductors | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 7V ~ 20V | Single | High-Side | 1 | N-Channel MOSFET | 1.5V, 3.5V | — | — | 10µs, 280µs | — |
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MCZ33285EF
IC GATE DRVR HIGH-SIDE 8SOIC |
NXP Semiconductors | Obsolete | -40°C ~ 125°C (TA) | Surface Mount | — | Non-Inverting | 8-SOIC | 7V ~ 40V | Synchronous | High-Side | 2 | N-Channel MOSFET | 0.7V, 1.7V | — | — | — | — |
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MCZ33285EFR2
IC GATE DRVR HIGH-SIDE 8SOIC |
NXP Semiconductors | Obsolete | -40°C ~ 125°C (TA) | Surface Mount | — | Non-Inverting | 8-SOIC | 7V ~ 40V | Synchronous | High-Side | 2 | N-Channel MOSFET | 0.7V, 1.7V | — | — | — | — |
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MCZ33883EG
IC GATE DRVR HALF-BRIDGE 20SOIC |
NXP Semiconductors | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 20-SOIC | 5.5V ~ 55V | Independent | Half-Bridge | 4 | N-Channel MOSFET | 0.8V, 2V | 1A, 1A | — | — | — |
|
MCZ33883EGR2
FULL BRIDGE BASED MOSFET DRIVER, |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 20-SOIC | 5.5V ~ 55V | Independent | Half-Bridge | 4 | N-Channel MOSFET | 0.8V, 2V | 1A, 1A | — | — | — |
|
MCZ33883EGR2
IC GATE DRVR HALF-BRIDGE 20SOIC |
NXP Semiconductors | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 20-SOIC | 5.5V ~ 55V | Independent | Half-Bridge | 4 | N-Channel MOSFET | 0.8V, 2V | 1A, 1A | — | — | — |
|
MD1210K6-G
IC GATE DRVR HALF-BRIDGE 12QFN |
Microchip Technology | Active | -20°C ~ 125°C (TJ) | Surface Mount | 12-VQFN Exposed Pad | Non-Inverting | 12-QFN (4x4) | 4.5V ~ 13V | Independent | Half-Bridge | 2 | N-Channel, P-Channel MOSFET | 0.3V, 1.2V | 2A, 2A | — | 6ns, 6ns | — |
|
MD1211LG-G
IC GATE DRVR HALF-BRIDGE 8SOIC |
Microchip Technology | Active | -20°C ~ 125°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 4.5V ~ 13V | Independent | Half-Bridge | 2 | N-Channel, P-Channel MOSFET | 0.8V, 1.5V | 2A, 2A | — | 10ns, 10ns | — |