PMIC - Kapı Sürücüleri
- Komponent
- 6,680
- Marka
- 32
Komponentler
6,680 sonuç · Sayfa 121/134| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Input Type | Supplier Device Package | Voltage - Supply | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TC4469EJD
IC GATE DRVR LOW-SIDE 14CERDIP |
Microchip Technology | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting, Non-Inverting | 14-CERDIP | 4.5V ~ 18V | Independent | Low-Side | 4 | N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 1.2A, 1.2A | — | 15ns, 15ns | — |
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TC4469EOE
IC GATE DRVR LOW-SIDE 16SOIC |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting, Non-Inverting | 16-SOIC | 4.5V ~ 18V | Independent | Low-Side | 4 | N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 1.2A, 1.2A | — | 15ns, 15ns | — |
|
TC4469EOE713
IC GATE DRVR LOW-SIDE 16SOIC |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting, Non-Inverting | 16-SOIC | 4.5V ~ 18V | Independent | Low-Side | 4 | N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 1.2A, 1.2A | — | 15ns, 15ns | — |
|
TC4469EPD
IC GATE DRVR LOW-SIDE 14DIP |
Microchip Technology | Active | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting, Non-Inverting | 14-PDIP | 4.5V ~ 18V | Independent | Low-Side | 4 | N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 1.2A, 1.2A | — | 15ns, 15ns | — |
|
TC4469MJD
IC GATE DRVR LOW-SIDE 14CERDIP |
Microchip Technology | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | — | Inverting, Non-Inverting | 14-CERDIP | 4.5V ~ 18V | Independent | Low-Side | 4 | N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 1.2A, 1.2A | — | 15ns, 15ns | — |
|
TC4489CPD
IC GATE DRVR QUAD CMOS 14DIP |
Microchip Technology | Obsolete | — | Through Hole | — | — | 14-PDIP | — | — | — | 4 | — | — | — | — | — | — |
|
TC4626COE
IC GATE DRVR HI/LOW SIDE 16SOIC |
Microchip Technology | Active | 0°C ~ 70°C (TA) | Surface Mount | — | Inverting | 16-SOIC | 4V ~ 6V | Single | High-Side or Low-Side | 1 | N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 1.5A, 1.5A | — | 33ns, 27ns | — |
|
TC4626COE713
IC GATE DRVR HI/LOW SIDE 16SOIC |
Microchip Technology | Active | 0°C ~ 70°C (TA) | Surface Mount | — | Inverting | 16-SOIC | 4V ~ 6V | Single | High-Side or Low-Side | 1 | N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 1.5A, 1.5A | — | 33ns, 27ns | — |
|
TC4626CPA
IC GATE DRV HI-SIDE/LO-SIDE 8DIP |
Microchip Technology | Active | 0°C ~ 70°C (TA) | Through Hole | — | Inverting | 8-PDIP | 4V ~ 6V | Single | High-Side or Low-Side | 1 | N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 1.5A, 1.5A | — | 33ns, 27ns | — |
|
TC4626EOE
IC GATE DRVR HI/LOW SIDE 16SOIC |
Microchip Technology | Active | -40°C ~ 85°C (TA) | Surface Mount | — | Inverting | 16-SOIC | 4V ~ 6V | Single | High-Side or Low-Side | 1 | N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 1.5A, 1.5A | — | 33ns, 27ns | — |
|
TC4626EOE713
IC GATE DRVR HI/LOW SIDE 16SOIC |
Microchip Technology | Active | -40°C ~ 85°C (TA) | Surface Mount | — | Inverting | 16-SOIC | 4V ~ 6V | Single | High-Side or Low-Side | 1 | N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 1.5A, 1.5A | — | 33ns, 27ns | — |
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TC4626EPA
IC GATE DRV HI-SIDE/LO-SIDE 8DIP |
Microchip Technology | Active | -40°C ~ 85°C (TA) | Through Hole | — | Inverting | 8-PDIP | 4V ~ 6V | Single | High-Side or Low-Side | 1 | N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 1.5A, 1.5A | — | 33ns, 27ns | — |
|
TC4626MJA
IC GATE DRVR HI/LOW SIDE 8CERDIP |
Microchip Technology | Obsolete | -55°C ~ 125°C (TA) | Through Hole | — | Inverting | 8-CERDIP | 4V ~ 6V | Single | High-Side or Low-Side | 1 | N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 1.5A, 1.5A | — | 33ns, 27ns | — |
|
TC4627COE
IC GATE DRVR HI/LOW SIDE 16SOIC |
Microchip Technology | Active | 0°C ~ 70°C (TA) | Surface Mount | — | Non-Inverting | 16-SOIC | 4V ~ 6V | Single | High-Side or Low-Side | 1 | N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 1.5A, 1.5A | — | 33ns, 27ns | — |
|
TC4627COE713
IC GATE DRVR HI/LOW SIDE 16SOIC |
Microchip Technology | Active | 0°C ~ 70°C (TA) | Surface Mount | — | Non-Inverting | 16-SOIC | 4V ~ 6V | Single | High-Side or Low-Side | 1 | N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 1.5A, 1.5A | — | 33ns, 27ns | — |
|
TC4627CPA
IC GATE DRV HI-SIDE/LO-SIDE 8DIP |
Microchip Technology | Active | 0°C ~ 70°C (TA) | Through Hole | — | Non-Inverting | 8-PDIP | 4V ~ 6V | Single | High-Side or Low-Side | 1 | N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 1.5A, 1.5A | — | 33ns, 27ns | — |
|
TC4627EOE
IC GATE DRVR HI/LOW SIDE 16SOIC |
Microchip Technology | Active | -40°C ~ 85°C (TA) | Surface Mount | — | Non-Inverting | 16-SOIC | 4V ~ 6V | Single | High-Side or Low-Side | 1 | N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 1.5A, 1.5A | — | 33ns, 27ns | — |
|
TC4627EOE713
IC GATE DRVR HI/LOW SIDE 16SOIC |
Microchip Technology | Active | -40°C ~ 85°C (TA) | Surface Mount | — | Non-Inverting | 16-SOIC | 4V ~ 6V | Single | High-Side or Low-Side | 1 | N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 1.5A, 1.5A | — | 33ns, 27ns | — |
|
TC4627EPA
IC GATE DRV HI-SIDE/LO-SIDE 8DIP |
Microchip Technology | Active | -40°C ~ 85°C (TA) | Through Hole | — | Non-Inverting | 8-PDIP | 4V ~ 6V | Single | High-Side or Low-Side | 1 | N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 1.5A, 1.5A | — | 33ns, 27ns | — |
|
TC4627MJA
IC GATE DRVR HI/LOW SIDE 8CERDIP |
Microchip Technology | Active | -55°C ~ 125°C (TA) | Through Hole | — | Non-Inverting | 8-CERDIP | 4V ~ 6V | Single | High-Side or Low-Side | 1 | N-Channel, P-Channel MOSFET | 0.8V, 2.4V | 1.5A, 1.5A | — | 33ns, 27ns | — |
|
TCK401G,LF
IC GATE DRVR HIGH-SIDE 6WCSPE |
Toshiba Electronic Devices and Storage Corporation | Active | -40°C ~ 85°C (TA) | Surface Mount | 6-UFBGA, WLCSP | Non-Inverting | 6-WCSPE (0.80x1.2) | 2.7V ~ 28V | Single | High-Side | 1 | — | 0.4V, 1.6V | — | — | 0.2ms, 1.5µs | — |
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TCK402G,LF
IC GATE DRVR LOW-SIDE 6WCSPE |
Toshiba Electronic Devices and Storage Corporation | Active | -40°C ~ 85°C (TA) | Surface Mount | 6-UFBGA, WLCSP | Non-Inverting | 6-WCSPE (0.80x1.2) | 2.7V ~ 28V | Single | Low-Side | 1 | — | 0.4V, 1.6V | — | — | 0.2ms, 1.5µs | — |
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TCK421G,L3F
GATE DRIVER IC VIN:2.7-28V OVLO |
Toshiba Electronic Devices and Storage Corporation | Active | -40°C ~ 85°C (TA) | Surface Mount | 6-XFBGA, WLCSP | Non-Inverting | 6-WCSPG (0.8x1.2) | 2.7V ~ 28V | Synchronous | High-Side and Low-Side | 2 | N-Channel MOSFET | 0.4V, 1.2V | — | — | — | — |
|
TD310ID
IC GATE DRVR LOW-SIDE 16SO |
STMicroelectronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting, Non-Inverting | 16-SO | 4V ~ 16V | Independent | Low-Side | 3 | IGBT, N-Channel MOSFET | 0.8V, 2V | — | — | — | — |
|
TD310IDT
IC GATE DRVR LOW-SIDE 16SO |
STMicroelectronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting, Non-Inverting | 16-SO | 4V ~ 16V | Independent | Low-Side | 3 | IGBT, N-Channel MOSFET | 0.8V, 2V | — | — | — | — |
|
TD310IN
IC GATE DRVR LOW-SIDE 16DIP |
STMicroelectronics | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Inverting, Non-Inverting | 16-DIP | 4V ~ 16V | Independent | Low-Side | 3 | IGBT, N-Channel MOSFET | 0.8V, 2V | — | — | — | — |
|
TD350E
IC GATE DRVR IGBT HIGH-SIDE 14SO |
STMicroelectronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 14-SO | 12V ~ 26V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 4.2V | 1.5A, 2.3A | — | 130ns, 75ns (Max) | — |
|
TD350ETR
IC GATE DRVR HIGH-SIDE 14SO |
STMicroelectronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 14-SO | 12V ~ 26V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 4.2V | 1.5A, 2.3A | — | 130ns, 75ns (Max) | — |
|
TD350ID
IC GATE DRVR HIGH-SIDE 14SO |
STMicroelectronics | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 14-SO | 12V ~ 26V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 4.2V | 1.5A, 2.3A | — | 130ns, 75ns (Max) | — |
|
TD350IDT
IC GATE DRVR HIGH-SIDE 14SO |
STMicroelectronics | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 14-SO | 12V ~ 26V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 4.2V | 1.5A, 2.3A | — | 130ns, 75ns (Max) | — |
|
TD351ID
IC GATE DRVR HIGH-SIDE 8SO |
STMicroelectronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 12V ~ 26V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 4.2V | 1.3A, 1.7A | — | 100ns, 100ns (Max) | — |
|
TD351IDT
IC GATE DRVR HIGH-SIDE 8SO |
STMicroelectronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 12V ~ 26V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 4.2V | 1.3A, 1.7A | — | 100ns, 100ns (Max) | — |
|
TD351IN
IC GATE DRVR HIGH-SIDE 8DIP |
STMicroelectronics | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-DIP | 12V ~ 26V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 4.2V | 1.3A, 1.7A | — | 100ns, 100ns (Max) | — |
|
TD352ID
IC GATE DRVR HIGH-SIDE 8SO |
STMicroelectronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 12V ~ 26V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 4.2V | 1.3A, 1.7A | — | 100ns, 100ns (Max) | — |
|
TD352IDT
IC GATE DRVR HIGH-SIDE 8SO |
STMicroelectronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 12V ~ 26V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 4.2V | 1.3A, 1.7A | — | 100ns, 100ns (Max) | — |
|
TD352IN
IC GATE DRVR HIGH-SIDE 8DIP |
STMicroelectronics | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-DIP | 12V ~ 26V | Single | High-Side | 1 | IGBT, N-Channel MOSFET | 0.8V, 4.2V | 1.3A, 1.7A | — | 100ns, 100ns (Max) | — |
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TDA21106
IC GATE DRVR HALF-BRIDGE DSO8 |
Infineon Technologies | Obsolete | -25°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | PG-DSO-8-3 | 10.8V ~ 13.2V | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | — | 4A, 4A | 45 V | 20ns, 15ns | — |
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TDA21107
IC GATE DRVR HALF-BRIDGE DSO8 |
Infineon Technologies | Obsolete | 0°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | PG-DSO-8 | 10.8V ~ 13.2V | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | — | — | 30 V | 30ns, 40ns | — |
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TDA21460AUMA1
INT. POWERSTAGE/DRIVER |
Infineon Technologies | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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TDA21462AUMA1
IC GATE DRVR C_IFX POWERSTAGE |
Infineon Technologies | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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TDA21472AUMA1
IC GATE DRVR C_IFX POWERSTAGE |
Infineon Technologies | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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TDA21475AUMA1
IFX POWERSTAGE/DRIVER PG-IQFN-39 |
Infineon Technologies | Active | — | Surface Mount | 41-PowerWFQFN | Non-Inverting | 41-PQFN (5x6) | 4.25V ~ 16V | Synchronous | — | 4 | — | — | — | — | — | — |
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TDA21490AUMA1
IFX POWERSTAGE/DRIVER |
Infineon Technologies | Active | -40°C ~ 125°C (TJ) | Surface Mount | 39-QFN | Non-Inverting | PG-IQFN-39 | 4.25V ~ 16V | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | — | 90A, 70A | — | — | — |
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TDA21520AUMA1
IFX POWERSTAGE/DRIVER PG-IQFN-25 |
Infineon Technologies | Active | -40°C ~ 125°C (TJ) | Surface Mount | 25-PowerTFQFN | Non-Inverting | PG-IQFN-25-1 | 4.25V ~ 16V | Single | Half-Bridge | 2 | N-Channel MOSFET | 2V, 0.8V | 20A, 20A | — | — | — |
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TDA21535AUMA1
IFX POWERSTAGE/DRIVER |
Infineon Technologies | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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TDA21570AUMA1
IFX POWERSTAGE/DRIVER PG-IQFN-39 |
Infineon Technologies | Active | -40°C ~ 125°C (TJ) | Surface Mount | 39-QFN | Non-Inverting | PG-IQFN-39 | 4.25V ~ 16V | Synchronous | High-Side and Low-Side | 1 | — | 0.8V, 2.4V | — | 29 V | — | — |
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TDA88240AUMA1
IFX POWERSTAGE/DRIVER PG-IQFN-30 |
Infineon Technologies | Last Time Buy | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
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TLE7181EM
TLE7181 - GATE DRIVER |
Rochester Electronics | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | PG-SSOP-24 | 5.5V ~ 45V | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 1V, 2V | — | 55 V | 250ns, 200ns | — |
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TLE7181EMXUMA1
IC GATE DRVR HALF-BRIDGE SSOP-24 |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | PG-SSOP-24-4 | 7V ~ 34V | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 1V, 2V | — | 55 V | 250ns, 200ns | — |
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TLE7182EMXUMA1
IC GATE DRVR HALF-BRIDGE SSOP-24 |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting, Non-Inverting | PG-SSOP-24-4 | 7V ~ 34V | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 1V, 2V | — | 55 V | 250ns, 200ns | — |