PMIC - Kapı Sürücüleri
- Komponent
- 6,680
- Marka
- 32
Komponentler
6,680 sonuç · Sayfa 12/134| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Input Type | Supplier Device Package | Voltage - Supply | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AUIRS21811STR
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 60ns, 35ns (Max) | — |
|
AUIRS21814S
IC GATE DRVR HALF-BRIDGE 14SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 14-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 15ns, 15ns | — |
|
AUIRS21814STR
IC GATE DRVR HALF-BRIDGE 14SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 14-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 15ns, 15ns | — |
|
AUIRS2181S
IC GATE DRVR HALF-BRIDGE 8SOIC |
Rochester Electronics | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 15ns, 15ns | — |
|
AUIRS2181STR
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 15ns, 15ns | — |
|
AUIRS21844S
IC GATE DRVR HALF-BRIDGE 14SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 14-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 15ns, 12ns | — |
|
AUIRS2184S
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 10V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 1.9A, 2.3A | 600 V | 15ns, 12ns | — |
|
AUIRS2191S
IC GATE DRVR HALF-BRIDGE 16SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 3.5A, 3.5A | 600 V | 15ns, 15ns | — |
|
AUIRS2191STR
IC GATE DRVR HALF-BRIDGE 16SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SOIC | 10V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 3.5A, 3.5A | 600 V | 15ns, 15ns | — |
|
AUIRS2301S
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 5V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 200mA, 350mA | 600 V | 130ns, 50ns | — |
|
AUIRS2301STR
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | — | 8-SOIC | 5V ~ 20V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 200mA, 350mA | 600 V | 130ns, 50ns | — |
|
AUIRS2302S
IC GATE DRVR HALF-BRIDGE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 5V ~ 20V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 200mA, 350mA | 600 V | 100ns, 25ns | — |
|
AUIRS2332J
IC GATE DRVR HALF-BRIDGE 44PLCC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | 44-LCC (J-Lead), 32 Leads | Non-Inverting | 44-PLCC, 32 Leads (16.58x16.58) | 10V ~ 20V | 3-Phase | Half-Bridge | 6 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.2V | 250mA, 500mA | 600 V | 80ns, 40ns | — |
|
AUIRS2334S
IC GATE DRVR HALF-BRIDGE 20SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 20-SOIC | 10V ~ 20V | 3-Phase | Half-Bridge | 6 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.5V | 200mA, 350mA | 600 V | 125ns, 50ns | — |
|
AUIRS2336S
IC GATE DRVR HALF-BRIDGE 28SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 28-SOIC | 10V ~ 20V | 3-Phase | Half-Bridge | 6 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.5V | 200mA, 350mA | 600 V | 125ns, 50ns | — |
|
AUIRS2336STR
IC GATE DRVR HALF-BRIDGE 28SOIC |
Infineon Technologies | Last Time Buy | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 28-SOIC | 10V ~ 20V | 3-Phase | Half-Bridge | 6 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.5V | 200mA, 350mA | 600 V | 125ns, 50ns | — |
|
AUIRS44261S
IC GATE DRVR LOW-SIDE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 4.8V ~ 20V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.7V | 2.3A, 3.3A | — | 15ns, 25ns | — |
|
AUIRS4426S
IC GATE DRVR LOW-SIDE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting | 8-SOIC | 6V ~ 20V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.7V | 2.3A, 3.3A | — | 15ns, 25ns | — |
|
AUIRS4427S
IC GATE DRVR LOW-SIDE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 6V ~ 20V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.5V | 2.3A, 3.3A | — | 25ns, 25ns | — |
|
AUIRS4427STR
AUIRS4427 - GATE DRIVER |
Rochester Electronics | Obsolete | — | Surface Mount | — | Non-Inverting | 8-SOIC | 6V ~ 20V | — | Low-Side | 2 | — | — | — | — | — | — |
|
AUIRS4428S
IC GATE DRVR LOW-SIDE 8SOIC |
Infineon Technologies | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting, Non-Inverting | 8-SOIC | 6V ~ 20V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 2.7V | 2.3A, 3.3A | — | 15ns, 25ns | — |
|
AUXDI2117STR
IC GATE DRVR HIGH SIDE SGL 8SOIC |
Infineon Technologies | Obsolete | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BD16950EFV-CE2
IC GATE DRVR HALF-BRIDG 24HTSSOP |
ROHM Semiconductor | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 24-HTSSOP-B | 3V ~ 5.5V | Independent | Half-Bridge | 2 | N-Channel MOSFET | — | — | — | — | — |
|
BD16952EFV-ME2
IC GATE DRVR HALF-BRIDG 24HTSSOP |
ROHM Semiconductor | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 24-HTSSOP-B | 3V ~ 5.5V | Independent | Half-Bridge | 2 | N-Channel MOSFET | — | — | — | — | — |
|
BD2270HFV-LBTR
IC GATE DRVR HIGH-SIDE HVSOF5 |
ROHM Semiconductor | Active | -25°C ~ 85°C (TA) | Surface Mount | SOT-665 | Non-Inverting | 5-HVSOF | 2.7V ~ 5.5V | Single | High-Side | 1 | N-Channel MOSFET | — | — | — | 130µs, 18µs | — |
|
BD2270HFV-TR
IC GATE DRVR HIGH-SIDE HVSOF5 |
ROHM Semiconductor | Active | -25°C ~ 85°C (TA) | Surface Mount | SOT-665 | Non-Inverting | 5-HVSOF | 2.7V ~ 5.5V | Single | High-Side | 1 | N-Channel MOSFET | — | — | — | 130µs, 18µs | — |
|
BD2310G-TR
1CH 4A HIGH SPEED LOW-SIDE GATE |
ROHM Semiconductor | Active | -40°C ~ 125°C | Surface Mount | SC-74A, SOT-753 | Non-Inverting | 5-SSOP | 4.5V ~ 18V | Single | Low-Side | 1 | IGBT, N-Channel MOSFET | — | 4A, 4A | — | 10ns, 10ns | — |
|
BD6562FV-LBE2
IC GATE DRVR LOW-SIDE 16SSOP |
ROHM Semiconductor | Obsolete | -25°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SSOP-B | 10V ~ 25V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | — | 600mA, 600mA | — | — | — |
|
BD6563FV-LBE2
IC GATE DRVR LOW-SIDE 16SSOP |
ROHM Semiconductor | Obsolete | -25°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 16-SSOP-B | 10V ~ 25V | Independent | Low-Side | 3 | IGBT, N-Channel, P-Channel MOSFET | — | 600mA, 600mA | — | — | — |
|
BM60212FV-CE2
IC GATE DRVR HI/LOW SIDE 20SSOP |
ROHM Semiconductor | Active | -40°C ~ 125°C (TA) | Surface Mount | — | Non-Inverting | 20-SSOP-BW | 10V ~ 24V | Synchronous | High-Side and Low-Side | 2 | IGBT, N-Channel MOSFET | 0.8V, 2V | 4.5A, 3.9A | 1200 V | 50ns, 50ns | — |
|
BM60213FV-CE2
IC GATE DRVR HI/LOW SIDE 20SSOP |
ROHM Semiconductor | Active | -40°C ~ 125°C | Surface Mount | — | Non-Inverting | 20-SSOP-BW | 10V ~ 24V | Independent | High-Side or Low-Side | 2 | IGBT, N-Channel MOSFET | 0.8V, 2V | 4.5A, 3.9A | 1200 V | 50ns, 50ns | — |
|
BM6103FV-CE2
IC GATE DRVR LOW-SIDE 20SSOP |
ROHM Semiconductor | Active | -40°C ~ 150°C (TJ) | Surface Mount | — | Inverting, Non-Inverting | 20-SSOP-B | 4.5 ~ 5.5V | — | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | — | — | — | 50ns, 50ns | — |
|
BS2100F-E2
IC DVR IGBT/MOSFET |
ROHM Semiconductor | Active | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
|
BS2101F-E2
IC GATE DRV HI-SIDE/LO-SIDE 8SOP |
ROHM Semiconductor | Not For New Designs | -40°C ~ 125°C (TA) | Surface Mount | — | Non-Inverting | 8-SOP | 10V ~ 18V | Synchronous | High-Side or Low-Side | 2 | IGBT, N-Channel MOSFET | 1V, 2.6V | 60mA, 130mA | 600 V | 60ns, 20ns | — |
|
BS2103F-E2
IC GATE DRVR HALF-BRIDGE 8SOP |
ROHM Semiconductor | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOP | 10V ~ 18V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 1V, 2.6V | 60mA, 130mA | 600 V | 200ns, 100ns | — |
|
BS2114F-E2
600V HIGH VOLTAGE HIGH & LOW-SID |
ROHM Semiconductor | Obsolete | -40°C ~ 125°C (TA) | Surface Mount | — | Inverting | 8-SOP | 10V ~ 20V | Independent | High-Side or Low-Side | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.6V | — | 600 V | 30ns, 30ns | — |
|
BS2132F-E2
600V HIGH VOLTAGE 3 PHASE BRIDGE |
ROHM Semiconductor | Obsolete | -40°C ~ 125°C (TA) | Surface Mount | — | Non-Inverting | 28-SOP | 11.5V ~ 20V | 3-Phase | High-Side | 3 | IGBT, N-Channel MOSFET | 0.8V, 2.6V | — | 600 V | 125ns, 50ns | — |
|
BUK218-50DC,118
IC GATE DRVR HIGH-SIDE D2PAK-7 |
NXP Semiconductors | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | — | D2PAK-7 | 5.5V ~ 35V | Independent | High-Side | 2 | N-Channel MOSFET | 1.2V, 3V | 8A, 8A | — | — | — |
|
BUK218-50DY,118
IC GATE DRVR HIGH-SIDE D2PAK-7 |
NXP Semiconductors | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | — | D2PAK-7 | 5.5V ~ 35V | Independent | High-Side | 2 | N-Channel MOSFET | 1.2V, 3V | 8A, 8A | — | — | — |
|
CA3252E
QUAD GATED NON-INVERTING POWER D |
Rochester Electronics | Active | -40°C ~ 105°C | Through Hole | — | Inverting, Non-Inverting | 16-PDIP | 5V | Synchronous | Low-Side | 4 | N-Channel MOSFET | 0.8V, 2V | 600mA, 600mA | 35 V | — | — |
|
CA3252M
QUAD GATED NON-INVERTING POWER D |
Rochester Electronics | Active | -40°C ~ 105°C | Surface Mount | — | Inverting, Non-Inverting | 20-SOIC | 5V | Synchronous | Low-Side | 4 | N-Channel MOSFET | 0.8V, 2V | 600mA, 600mA | 35 V | — | — |
|
CHL8505CRT
IC GATE DRVR HALF-BRIDGE 10DFN |
Infineon Technologies | Obsolete | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | Non-Inverting | 10-DFN (3x3) | 4.5V ~ 5.5V | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 0.8V, 1V | 2A, 2A | 35 V | 10ns, 8ns | — |
|
CHL8510CRT
IC GATE DRVR HALF-BRIDGE 10DFN |
Infineon Technologies | Active | 0°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | Non-Inverting | 10-DFN (3x3) | 10.8V ~ 13.2V | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 0.8V, 1V | 3A, 4A | 35 V | 21ns, 18ns | — |
|
CHL8515CRT
IC GATE DRVR HALF-BRIDGE 10DFN |
Infineon Technologies | Obsolete | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | Non-Inverting | 10-DFN (3x3) | 4.5V ~ 5.5V | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 0.8V, 1V | 2A, 2A | 35 V | 10ns, 8ns | — |
|
CHL8550CRT
IC GATE DRVR HALF-BRIDGE 10DFN |
Infineon Technologies | Obsolete | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | Non-Inverting | 10-DFN (3x3) | 4.5V ~ 5.5V | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 0.8V, 1V | 2A, 2A | 35 V | 10ns, 8ns | — |
|
CMT-TIT0697A
MOS GATE DRIVER 1200V SIC |
CISSOID | Active | -40°C ~ 125°C (TA) | — | Module | Non-Inverting | Module | 12V ~ 18V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | — | 10A, 10A | 1200 V | — | — |
|
CMT-TIT8243A
MOS GATE DRIVER 62MM 1200V SIC |
CISSOID | Active | -40°C ~ 125°C (TA) | — | Module | Non-Inverting | Module | 12V ~ 18V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | — | 10A, 10A | 1200 V | — | — |
|
CMT-TIT8244A
MOS GATE DRIVER 62MM 1700V SIC |
CISSOID | Active | -40°C ~ 125°C (TA) | — | Module | Non-Inverting | Module | 12V ~ 18V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | — | 10A, 10A | 1700 V | — | — |
|
CS8312YDR8
IC GATE DRVR LOW-SIDE 8SOIC |
onsemi | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | — | Non-Inverting | 8-SOIC | 7V ~ 10V | Single | Low-Side | 1 | IGBT, N-Channel MOSFET | — | — | — | — | — |
|
CS8312YN8
IC GATE DRVR LOW-SIDE 8DIP |
Rochester Electronics | Obsolete | -40°C ~ 150°C (TJ) | Through Hole | — | Non-Inverting | 8-PDIP | 7V ~ 10V | Single | Low-Side | 1 | IGBT, N-Channel MOSFET | — | — | — | — | — |