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Part Status

Operating Temperature

Mounting Type

Package / Case

Technology

Supplier Device Package

Diode Type

Voltage - Peak Reverse (Max)

Current - Average Rectified (Io)

Voltage - Forward (Vf) (Max) @ If

Current - Reverse Leakage @ Vr

Komponentler

7,621 sonuç · Sayfa 66/153
Parça No Üretici Part Status Operating Temperature Mounting Type Package / Case Technology Supplier Device Package Diode Type Voltage - Peak Reverse (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Datasheet
GBPC3510M T0G

BRIDGE RECT 1P 1KV 35A GBPC-M

Taiwan Semiconductor Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC-M Standard GBPC-M Single Phase 1 kV 35 A 1.1 V @ 17.5 A 5 µA @ 1000 V —
GBPC3510T

BRIDGE RECT 1PHASE 1KV 35A GBPC

GeneSiC Semiconductor Active -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC Standard GBPC Single Phase 1 kV 35 A 1.1 V @ 17.5 A 5 µA @ 1000 V ✓
GBPC3510TA

BRIDGE RECT 1PHASE 1KV 35A GBPC

SMC Diode Solutions Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC Standard GBPC Single Phase 1 kV 35 A 1.1 V @ 17.5 A 5 µA @ 1000 V —
GBPC3510W

BRIDGE RECT 1P 1KV 35A GBPC-W

GeneSiC Semiconductor Active -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W Standard GBPC-W Single Phase 1 kV 35 A 1.1 V @ 17.5 A 5 µA @ 1000 V ✓
GBPC3510W

BRIDGE RECT 1P 1KV 35A GBPC-W

onsemi Active -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W Standard GBPC-W Single Phase 1 kV 35 A 1.1 V @ 17.5 A 5 µA @ 1000 V ✓
GBPC3510W

35A -1000V - GBPC-W - BRIDGE

SURGE Active -65°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W Standard GBPC-W Single Phase 1 kV 35 A 1.1 V @ 17.5 A 5 µA @ 1000 V ✓
GBPC3510W

BRIDGE RECT 1P 1KV 35A GBPC-W

Diodes Incorporated Obsolete -65°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W Standard GBPC-W Single Phase 1 kV 35 A 1.1 V @ 17.5 A 5 µA @ 1000 V ✓
GBPC3510W T0G

BRIDGE RECT 1P 1KV 35A GBPC-W

Taiwan Semiconductor Active -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W Standard GBPC-W Single Phase 1 kV 35 A 1.1 V @ 17.5 A 5 µA @ 1000 V —
GBPC3510W-A1-0000

RECT BRIDGE 1000V 35A GBPCW-G

YANGJIE Active -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W Standard GBPC-W Single Phase 1 kV 35 A 1.1 V @ 17.5 A 10 µA @ 1000 V —
GBPC3510W-E4/51

BRIDGE RECT 1P 1KV 35A GBPC-W

Vishay Active -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W Standard GBPC-W Single Phase 1 kV 35 A 1.1 V @ 17.5 A 5 µA @ 1000 V ✓
GBPC3510W-G

BRIDGE RECT 1P 1KV 35A GBPC-W

Comchip Technology Active -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W Standard GBPC-W Single Phase 1 kV 35 A 1.1 V @ 17.5 A 10 µA @ 1000 V —
GBPC3510WTA

BRIDGE RECT 1P 1KV 35A GBPC-W

SMC Diode Solutions Active -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W Standard GBPC-W Single Phase 1 kV 35 A 1.1 V @ 17.5 A 5 µA @ 1000 V —
GBPC40005 T0G

BRIDGE RECT 1P 50V 40A GBPC40

Taiwan Semiconductor Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC40 Standard GBPC40 Single Phase 50 V 40 A 1.1 V @ 20 A 10 µA @ 50 V —
GBPC40005M T0G

BRIDGE RECT 1P 50V 40A GBPC40-M

Taiwan Semiconductor Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC40-M Standard GBPC40-M Single Phase 50 V 40 A 1.1 V @ 20 A 10 µA @ 50 V —
GBPC4001 T0G

BRIDGE RECT 1P 100V 40A GBPC40

Taiwan Semiconductor Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC40 Standard GBPC40 Single Phase 100 V 40 A 1.1 V @ 20 A 10 µA @ 1000 V —
GBPC4001M T0G

BRIDGE RECT 1P 100V 40A GBPC40-M

Taiwan Semiconductor Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC40-M Standard GBPC40-M Single Phase 100 V 40 A 1.1 V @ 20 A 10 µA @ 1000 V —
GBPC4002 T0G

BRIDGE RECT 1P 200V 40A GBPC40

Taiwan Semiconductor Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC40 Standard GBPC40 Single Phase 200 V 40 A 1.1 V @ 20 A 10 µA @ 100 V —
GBPC4002M T0G

BRIDGE RECT 1P 200V 40A GBPC40-M

Taiwan Semiconductor Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC40-M Standard GBPC40-M Single Phase 200 V 40 A 1.1 V @ 20 A 10 µA @ 100 V —
GBPC4004 T0G

BRIDGE RECT 1P 400V 40A GBPC40

Taiwan Semiconductor Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC40 Standard GBPC40 Single Phase 400 V 40 A 1.1 V @ 20 A 10 µA @ 400 V —
GBPC4004M T0G

BRIDGE RECT 1P 400V 40A GBPC40-M

Taiwan Semiconductor Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC40-M Standard GBPC40-M Single Phase 400 V 40 A 1.1 V @ 20 A 10 µA @ 400 V —
GBPC4006 T0G

BRIDGE RECT 1P 600V 40A GBPC40

Taiwan Semiconductor Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC40 Standard GBPC40 Single Phase 600 V 40 A 1.1 V @ 20 A 10 µA @ 600 V —
GBPC4006M T0G

BRIDGE RECT 1P 600V 40A GBPC40-M

Taiwan Semiconductor Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC40-M Standard GBPC40-M Single Phase 600 V 40 A 1.1 V @ 20 A 10 µA @ 600 V —
GBPC4008 T0G

BRIDGE RECT 1P 800V 40A GBPC40

Taiwan Semiconductor Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC40 Standard GBPC40 Single Phase 800 V 40 A 1.1 V @ 20 A 10 µA @ 800 V —
GBPC4008M T0G

BRIDGE RECT 1P 800V 40A GBPC40-M

Taiwan Semiconductor Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC40-M Standard GBPC40-M Single Phase 800 V 40 A 1.1 V @ 20 A 10 µA @ 800 V —
GBPC4010 T0G

BRIDGE RECT 1P 1KV 40A GBPC40

Taiwan Semiconductor Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC40 Standard GBPC40 Single Phase 1 kV 40 A 1.1 V @ 20 A 10 µA @ 1000 V —
GBPC4010M T0G

BRIDGE RECT 1P 1KV 40A GBPC40-M

Taiwan Semiconductor Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC40-M Standard GBPC40-M Single Phase 1 kV 40 A 1.1 V @ 20 A 10 µA @ 1000 V —
GBPC50005 T0G

BRIDGE RECT 1P 50V 50A GBPC40

Taiwan Semiconductor Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC40 Standard GBPC40 Single Phase 50 V 50 A 1.1 V @ 25 A 10 µA @ 50 V —
GBPC50005-G

BRIDGE RECT 1PHASE 50V 50A GBPC

Comchip Technology Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC Standard GBPC Single Phase 50 V 50 A 1.1 V @ 25 A 10 µA @ 50 V —
GBPC50005M T0G

BRIDGE RECT 1P 50V 50A GBPC40-M

Taiwan Semiconductor Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC40-M Standard GBPC40-M Single Phase 50 V 50 A 1.1 V @ 25 A 10 µA @ 50 V —
GBPC50005T

BRIDGE RECT 1PHASE 50V 50A GBPC

GeneSiC Semiconductor Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC Standard GBPC Single Phase 50 V 50 A 1.2 V @ 25 A 5 µA @ 50 V ✓
GBPC50005W

BRIDGE RECT 1P 50V 50A GBPC-W

GeneSiC Semiconductor Active -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W Standard GBPC-W Single Phase 50 V 50 A 1.2 V @ 25 A 5 µA @ 50 V ✓
GBPC50005W-G

BRIDGE RECT 1P 50V 50A GBPC-W

Comchip Technology Active -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W Standard GBPC-W Single Phase 50 V 50 A 1.1 V @ 25 A 10 µA @ 50 V —
GBPC5001 T0G

BRIDGE RECT 1P 100V 50A GBPC40

Taiwan Semiconductor Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC40 Standard GBPC40 Single Phase 100 V 50 A 1.1 V @ 25 A 10 µA @ 100 V —
GBPC5001-G

BRIDGE RECT 1PHASE 100V 50A GBPC

Comchip Technology Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC Standard GBPC Single Phase 100 V 50 A 1.1 V @ 25 A 10 µA @ 100 V —
GBPC5001M T0G

BRIDGE RECT 1P 100V 50A GBPC40-M

Taiwan Semiconductor Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC40-M Standard GBPC40-M Single Phase 100 V 50 A 1.1 V @ 25 A 10 µA @ 100 V —
GBPC5001T

BRIDGE RECT 1PHASE 100V 50A GBPC

GeneSiC Semiconductor Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC Standard GBPC Single Phase 100 V 50 A 1.2 V @ 25 A 5 µA @ 100 V ✓
GBPC5001W

BRIDGE RECT 1P 100V 50A GBPC-W

GeneSiC Semiconductor Active -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W Standard GBPC-W Single Phase 100 V 50 A 1.2 V @ 25 A 5 µA @ 100 V ✓
GBPC5001W-G

BRIDGE RECT 1P 100V 50A GBPC-W

Comchip Technology Active -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W Standard GBPC-W Single Phase 100 V 50 A 1.1 V @ 25 A 10 µA @ 100 V —
GBPC5002 T0G

BRIDGE RECT 1P 200V 50A GBPC40

Taiwan Semiconductor Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC40 Standard GBPC40 Single Phase 200 V 50 A 1.1 V @ 25 A 10 µA @ 100 V —
GBPC5002-G

BRIDGE RECT 1PHASE 200V 50A GBPC

Comchip Technology Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC Standard GBPC Single Phase 200 V 50 A 1.1 V @ 25 A 10 µA @ 200 V —
GBPC5002M T0G

BRIDGE RECT 1P 200V 50A GBPC40-M

Taiwan Semiconductor Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC40-M Standard GBPC40-M Single Phase 200 V 50 A 1.1 V @ 25 A 10 µA @ 100 V —
GBPC5002T

BRIDGE RECT 1PHASE 200V 50A GBPC

GeneSiC Semiconductor Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC Standard GBPC Single Phase 200 V 50 A 1.2 V @ 25 A 5 µA @ 200 V ✓
GBPC5002W

BRIDGE RECT 1P 200V 50A GBPC-W

GeneSiC Semiconductor Active -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W Standard GBPC-W Single Phase 200 V 50 A 1.2 V @ 25 A 5 µA @ 200 V ✓
GBPC5002W-G

BRIDGE RECT 1P 200V 50A GBPC-W

Comchip Technology Active -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W Standard GBPC-W Single Phase 200 V 50 A 1.1 V @ 25 A 10 µA @ 200 V —
GBPC5004

50A -400V - GBPC - BRIDGE

SURGE Active -65°C ~ 150°C (TJ) Through Hole 4-Square, GBPC Standard GBPC Single Phase 400 V 50 A 1.1 V @ 25 A 5 µA @ 400 V ✓
GBPC5004 T0G

BRIDGE RECT 1P 400V 50A GBPC40

Taiwan Semiconductor Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC40 Standard GBPC40 Single Phase 400 V 50 A 1.1 V @ 25 A 10 µA @ 400 V —
GBPC5004-BP

BRIDGE RECT 1PHASE 400V 50A GBPC

Micro Commercial Components (MCC) Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC Standard GBPC Single Phase 400 V 50 A 1.1 V @ 25 A 5 µA @ 400 V ✓
GBPC5004-G

BRIDGE RECT 1PHASE 400V 50A GBPC

Comchip Technology Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC Standard GBPC Single Phase 400 V 50 A 1.1 V @ 25 A 10 µA @ 400 V —
GBPC5004M T0G

BRIDGE RECT 1P 400V 50A GBPC40-M

Taiwan Semiconductor Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC40-M Standard GBPC40-M Single Phase 400 V 50 A 1.1 V @ 25 A 10 µA @ 400 V —
GBPC5004T

BRIDGE RECT 1PHASE 400V 50A GBPC

GeneSiC Semiconductor Active -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC Standard GBPC Single Phase 400 V 50 A 1.2 V @ 25 A 5 µA @ 400 V ✓

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