Diyotlar - Köprü Doğrultucular
- Komponent
- 7,621
- Marka
- 42
Komponentler
7,621 sonuç · Sayfa 55/153| Parça No | Üretici | Part Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | Diode Type | Voltage - Peak Reverse (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GBL06L-5600E3/51
BRIDGE RECT 1PHASE 600V 3A GBL |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 600 V | 3 A | 1 V @ 4 A | 5 µA @ 600 V | ✓ |
|
GBL06L-5701E3/51
BRIDGE RECT 1PHASE 600V 3A GBL |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 600 V | 3 A | 1 V @ 4 A | 5 µA @ 600 V | ✓ |
|
GBL06L-6177E3/51
BRIDGE RECT 1PHASE 600V 3A GBL |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 600 V | 3 A | 1 V @ 4 A | 5 µA @ 600 V | ✓ |
|
GBL06L-6832E3/45
BRIDGE RECT 1PHASE 600V 3A GBL |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 600 V | 3 A | 1 V @ 4 A | 5 µA @ 600 V | ✓ |
|
GBL06L-6870E3/51
BRIDGE RECT 1PHASE 600V 3A GBL |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 600 V | 3 A | 1 V @ 4 A | 5 µA @ 600 V | ✓ |
|
GBL06L-7000E3/45
BRIDGE RECT 1PHASE 600V 3A GBL |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 600 V | 3 A | 1 V @ 4 A | 5 µA @ 600 V | ✓ |
|
GBL08
BRIDGE RECT 1PHASE 800V 4A GBL |
GeneSiC Semiconductor | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 800 V | 4 A | 1 V @ 2 A | 10 µA @ 800 V | — |
|
GBL08 D2G
BRIDGE RECT 1PHASE 800V 4A GBL |
Taiwan Semiconductor | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 800 V | 4 A | 1 V @ 2 A | 5 µA @ 800 V | — |
|
GBL08-5000M3/51
BRIDGE RECT 1PHASE 800V 3A GBL |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 800 V | 3 A | 1 V @ 4 A | 5 µA @ 800 V | — |
|
GBL08-5300E3/51
BRIDGE RECT 1PHASE 800V 3A GBL |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 800 V | 3 A | 1 V @ 4 A | 5 µA @ 800 V | ✓ |
|
GBL08-E3/45
BRIDGE RECT 1PHASE 800V 3A GBL |
Vishay | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 800 V | 3 A | 1 V @ 2 A | 10 µA @ 800 V | ✓ |
|
GBL08-E3/51
BRIDGE RECT 1PHASE 800V 3A GBL |
Vishay | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 800 V | 3 A | 1 V @ 2 A | 10 µA @ 800 V | ✓ |
|
GBL08-G
BRIDGE RECT 1PHASE 800V 4A GBJ |
Comchip Technology | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBJ | Standard | GBJ | Single Phase | 800 V | 4 A | 1 V @ 2 A | 10 µA @ 800 V | — |
|
GBL08-M3/45
BRIDGE RECT 1PHASE 800V 4A GBL |
Vishay | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 800 V | 4 A | 1 V @ 2 A | 10 µA @ 800 V | ✓ |
|
GBL08-M3/51
BRIDGE RECT 1PHASE 800V 4A GBL |
Vishay | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 800 V | 4 A | 1 V @ 2 A | 10 µA @ 800 V | ✓ |
|
GBL08HD2G
BRIDGE RECT 1PHASE 800V 4A GBL |
Taiwan Semiconductor | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 800 V | 4 A | 1.1 V @ 4 A | 5 µA @ 800 V | — |
|
GBL08L-5306E3/45
BRIDGE RECT 1PHASE 800V 3A GBL |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 800 V | 3 A | 1 V @ 4 A | 5 µA @ 800 V | ✓ |
|
GBL08L-5701E3/45
BRIDGE RECT 1PHASE 800V 3A GBL |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 800 V | 3 A | 1 V @ 4 A | 5 µA @ 800 V | ✓ |
|
GBL08L-5701E3/51
BRIDGE RECT 1PHASE 800V 3A GBL |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 800 V | 3 A | 1 V @ 4 A | 5 µA @ 800 V | ✓ |
|
GBL08L-5701M3/45
BRIDGE RECT 1PHASE 800V 3A GBL |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 800 V | 3 A | 1 V @ 4 A | 5 µA @ 800 V | — |
|
GBL08L-7000E3/45
BRIDGE RECT 1PHASE 800V 3A GBL |
Vishay | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 800 V | 3 A | 1 V @ 4 A | 5 µA @ 800 V | ✓ |
|
GBL10
4A -1000V - GBL - BRIDGE |
SURGE | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 1 kV | 3 A | 1 V @ 2 A | 10 µA @ 1000 V | ✓ |
|
GBL10
BRIDGE RECT 1PHASE 1KV 4A GBL |
GeneSiC Semiconductor | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 1 kV | 4 A | 1.1 V @ 4 A | 5 µA @ 1000 V | — |
|
GBL10 D2G
BRIDGE RECT 1PHASE 1KV 4A GBL |
Taiwan Semiconductor | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 1 kV | 4 A | 1.1 V @ 4 A | 5 µA @ 1000 V | — |
|
GBL10-E3/45
BRIDGE RECT 1PHASE 1KV 3A GBL |
Vishay | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 1 kV | 3 A | 1.1 V @ 4 A | 5 µA @ 1000 V | ✓ |
|
GBL10-E3/51
BRIDGE RECT 1PHASE 1KV 3A GBL |
Vishay | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 1 kV | 3 A | 1.1 V @ 4 A | 5 µA @ 1000 V | ✓ |
|
GBL10-M3/45
BRIDGE RECT 1PHASE 1KV 4A GBL |
Vishay | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 1 kV | 4 A | 1.1 V @ 4 A | 5 µA @ 1000 V | ✓ |
|
GBL10-M3/51
BRIDGE RECT 1PHASE 1KV 4A GBL |
Vishay | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 1 kV | 4 A | 1.1 V @ 4 A | 5 µA @ 1000 V | ✓ |
|
GBL10HD2G
BRIDGE RECT 1PHASE 1KV 4A GBL |
Taiwan Semiconductor | Discontinued at Digi-Key | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 1 kV | 4 A | 1.1 V @ 4 A | 5 µA @ 1000 V | — |
|
GBL201 D2G
BRIDGE RECT 1PHASE 50V 2A GBL |
Taiwan Semiconductor | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 50 V | 2 A | 1 V @ 2 A | 5 µA @ 50 V | — |
|
GBL201HD2G
BRIDGE RECT 1PHASE 50V 2A GBL |
Taiwan Semiconductor | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 50 V | 2 A | 1 V @ 2 A | 5 µA @ 50 V | — |
|
GBL202 D2G
BRIDGE RECT 1PHASE 100V 2A GBL |
Taiwan Semiconductor | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 100 V | 2 A | 1 V @ 2 A | 5 µA @ 100 V | — |
|
GBL202HD2G
BRIDGE RECT 1PHASE 100V 2A GBL |
Taiwan Semiconductor | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 100 V | 2 A | 1 V @ 2 A | 5 µA @ 100 V | — |
|
GBL203 D2G
BRIDGE RECT 1PHASE 200V 2A GBL |
Taiwan Semiconductor | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 200 V | 2 A | 1 V @ 2 A | 5 µA @ 200 V | — |
|
GBL203HD2G
BRIDGE RECT 1PHASE 200V 2A GBL |
Taiwan Semiconductor | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 200 V | 2 A | 1 V @ 2 A | 5 µA @ 200 V | — |
|
GBL204 D2G
BRIDGE RECT 1PHASE 400V 2A GBL |
Taiwan Semiconductor | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 400 V | 2 A | 1 V @ 2 A | 5 µA @ 400 V | — |
|
GBL204HD2G
BRIDGE RECT 1PHASE 400V 2A GBL |
Taiwan Semiconductor | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 400 V | 2 A | 1 V @ 2 A | 5 µA @ 400 V | — |
|
GBL205 D2G
BRIDGE RECT 1PHASE 600V 2A GBL |
Taiwan Semiconductor | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 600 V | 2 A | 1 V @ 2 A | 5 µA @ 600 V | — |
|
GBL205HD2G
BRIDGE RECT 1PHASE 600V 2A GBL |
Taiwan Semiconductor | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 600 V | 2 A | 1 V @ 2 A | 5 µA @ 600 V | — |
|
GBL206 D2G
BRIDGE RECT 1PHASE 800V 2A GBL |
Taiwan Semiconductor | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 800 V | 2 A | 1 V @ 2 A | 5 µA @ 800 V | — |
|
GBL206-B1-3000
RECT BRIDGE 600V 2A 2KBJ |
YANGJIE | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 600 V | 2 A | 1 V @ 1 A | 5 µA @ 600 V | — |
|
GBL206-BP
DIODE GPP SGL PHASE 2A GBL |
Micro Commercial Components (MCC) | Active | -55°C ~ 150°C | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 600 V | 2 A | 1.05 V @ 1 A | 10 µA @ 600 V | — |
|
GBL206HD2G
BRIDGE RECT 1PHASE 800V 2A GBL |
Taiwan Semiconductor | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 800 V | 2 A | 1 V @ 2 A | 5 µA @ 800 V | — |
|
GBL207 D2G
BRIDGE RECT 1PHASE 1KV 2A GBL |
Taiwan Semiconductor | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 1 kV | 2 A | 1 V @ 2 A | 5 µA @ 1000 V | — |
|
GBL207HD2G
BRIDGE RECT 1PHASE 1KV 2A GBL |
Taiwan Semiconductor | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 1 kV | 2 A | 1 V @ 2 A | 5 µA @ 1000 V | — |
|
GBL208-BP
DIODE GPP SGL PHASE 2A GBL |
Micro Commercial Components (MCC) | Active | -55°C ~ 150°C | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 800 V | 2 A | 1.05 V @ 1 A | 10 µA @ 800 V | — |
|
GBL210-B1-0000
RECT BRIDGE 1000V 2A 2KBJ |
YANGJIE | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 1 kV | 2 A | 1 V @ 1 A | 5 µA @ 1000 V | — |
|
GBL2G
2A -400V - GBL - BRIDGE |
SURGE | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL | Single Phase | 400 V | 2 A | 1 V @ 1 A | 5 µA @ 400 V | — |
|
GBL2J
2A -600V - GBL - BRIDGE |
SURGE | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL(2S) | Single Phase | 600 V | 2 A | 1 V @ 1 A | 5 µA @ 600 V | — |
|
GBL2M
2A -1000V - GBL - BRIDGE |
SURGE | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | Standard | GBL(2S) | Single Phase | 1 kV | 2 A | 1 V @ 1 A | 5 µA @ 1000 V | — |